• Title/Summary/Keyword: nitrogen plasma

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Effect of Active Species Generated from Flexible Plasma Patch on Polysaccharide Surface (플렉서블 플라즈마 패치에서 발생되는 활성종이 다당류 표면에 미치는 영향)

  • Lee, Yu Ri;Lee, Seunghun;Kim, Do-Geun
    • Journal of the Korean institute of surface engineering
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    • v.51 no.2
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    • pp.133-137
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    • 2018
  • Plasma devices such as jets, pencils, and torches have been developed as new tools that help penetration of target agents and applied to plasma medicine. However, these devices cannot be used in a large area. Therefore, we introduced a flexible plasma device, which can be treated of large area and designed as bendable plasma. In additional, in vitro model based on agarose gel was prepared that can be show effectiveness in the depth of penetration. Plasma treatment conditions such as power, time and distance can be optimized on the agarose gel wound model. The chemical structure of changed polysaccharides was predicted due to reactive excited atoms and molecules, UV photons, charged particles and reactive oxygen and nitrogen species (RONS).

Spectroscopic Measurement of Temperature Distribution in Some Plasma Jets (분광학적 방법에 의한 Plasma Jet의 온도분석 측정)

  • 전춘생;박용관;임명선
    • 전기의세계
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    • v.26 no.2
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    • pp.104-110
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    • 1977
  • This paper investigates temperature distribution of plasma jets which used argon gas, and nitrogen gas mixed with argon as working fluids in spectroscopic method, and studies correlations between them main results are as follows; 1) The temperature at the center of plasma jet increases with are current and gas flow, and decreases with magnetic flux density along the axial direction. 2) The changing rate of temperature of plasma jet in the radial direction decreases rapidly beyond 2mm from central axis. 3) Temperature drop rate of plasma jet in the central axis direction appears most apparant beyond 13mm above the nozzle exit. 4) When argon gas mixed with a small amount of nitrogen, plasma temperature increases at same are current compared with the case of argon gas only.

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Influence of Deposition Parameters on Film Hardness for Newly Synthesized BON Thin Film by Low Frequency R.F. PEMOCVD

  • G.C. Chen;J.-H. Boo;Kim, Y.J.;J.G. Han
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.06a
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    • pp.73-73
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    • 2001
  • Boron-containing materials have several excellent properties, such as superlnardness, insulation and non-Rinear optical property. Recently, oxynitride compounds, such as Si(ON), Ti(ON), became the promising materials applied in diffusion barrier layer and solar cell. With the expectation of obtaining the hybrid property, we have firstly grown the BON thin film by radio frequency (R.F.) plasma enhanced metalorganic chemical vapm deposition (PEMOCVD) with 100 kHz frequency and trimethyl borate precursor. The plasma source gases used in this study were Ar and $H_2$, and two kinds of nhmgen source gases, $N_2$ and <$NH_3$, were also employed. The as-grown films were characterized by XPS, IR, SEM and Knoop microlhardness tester. The relationship between the films hardness and the growth rate indicated that the hardness of the film was dependent on several factors such as nitrogen source gas, substrate temperature and film thickness due to the variation of the composition and the structure of the film. Both nitrogen and carbon content could raise the film hardness, on which nitrogen content did stronger effect than carbon. The smooth morphology and continuous structure was benefit of obtaining high hardness. The maximum hardness of BON film was about 10 GPa.

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Efficient Multicasting Mechanism for Mobile Computing Environment Machine learning Model to estimate Nitrogen Ion State using Traingng Data from Plasma Sheath Monitoring Sensor (Plasma Sheath Monitoring Sensor 데이터를 활용한 질소이온 상태예측 모형의 기계학습)

  • Jung, Hee-jin;Ryu, Jinseung;Jeong, Minjoong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.05a
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    • pp.27-30
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    • 2022
  • The plasma process, which has many advantages in terms of efficiency and environment compared to conventional process methods, is widely used in semiconductor manufacturing. Plasma Sheath is a dark region observed between the plasma bulk and the chamber wall surrounding it or the electrode. The Plasma Sheath Monitoring Sensor (PSMS) measures the difference in voltage between the plasma and the electrode and the RF power applied to the electrode in real time. The PSMS data, therefore, are expected to have a high correlation with the state of plasma in the plasma chamber. In this study, a model for predicting the state of nitrogen ions in the plasma chamber is training by a deep learning machine learning techniques using PSMS data. For the data used in the study, PSMS data measured in an experiment with different power and pressure settings were used as training data, and the ratio, flux, and density of nitrogen ions measured in plasma bulk and Si substrate were used as labels. The results of this study are expected to be the basis of artificial intelligence technology for the optimization of plasma processes and real-time precise control in the future.

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UV emission characteristics of Ne+$N_2$ gas-mixture discharges in AC Plasma Display Panel

  • Baek, Byung-Jong;Hong, Sang-Min;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.586-589
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    • 2002
  • The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

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Synthesis of High Purity Aluminum Nitride Nanopowder in Ammonia and Nitrogen Atmosphere by RF Induction Thermal Plasma (RF 유도결합 열 플라즈마를 이용한 암모니아와 질소분위기에서 고순도 AlN 나노 분말의 합성)

  • Kim, Kyung-In;Choi, Sung-Churl;Kim, Jin-Ho;Hwang, Kwang-Taek;Han, Kyu-Sung
    • Journal of the Korean Ceramic Society
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    • v.51 no.3
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    • pp.201-207
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    • 2014
  • High-purity aluminum nitride nanopowders were synthesized using an RF induction thermal plasma instrument. Ammonia and nitrogen gases were used as sheath gas to control the reactor atmosphere. Synthesized AlN nanopowders were characterized by XRD, SEM, TEM, EDS, BET, FTIR, and N-O analyses. It was possible to synthesize high-purity AlN nanoparticles through control of the ammonia gas flow rate. However, additional process parameters such as plasma power and reactor pressure had to be controlled for the production of high-purity AlN nanopowders using nitrogen gas.

Formaldehyde Adsorption Properties of Activated Carbon Fiber-Papers by Nitrogen Plasma Treatment (질소 플라즈마 처리에 따른 활성탄소섬유 페이퍼의 포름알데하이드 흡착 특성)

  • Min, Chung Gi;Lim, Chaehun;Myeong, Seongjae;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.33 no.6
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    • pp.624-629
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    • 2022
  • Formaldehyde is an indoor pollutant that is harmful to humans, such as causing respiratory and skin diseases. Nitrogen plasma treatment was performed to introduce nitrogen groups on the surface of the activated carbon fibers (ACFs), and the adsorption characteristics of formaldehyde for the surface-modified ACFs were considered. As the nitrogen gas flow rate increased, the content of nitrogen functional groups introduced to the surface of the ACFs increased by about 7%, and the ratio of nitrogen functional groups to each type present was similar. Ultramicropores increased on the ACFs surface due to the etching effect of plasma treatment. The adsorption efficiency of formaldehyde on the modified ACFs surface was also enhanced. However, under the nitrogen flow rate of 120 sccm or more, the surface of the ACFs was excessively etched, and the specific surface area and the formaldehyde adsorption capacity decreased. Therefore, the content of the nitrogen groups is the main factor in the adsorption of formaldehyde on the nitrogen plasma-treated ACFs, but it can be found that the adsorption efficiency of formaldehyde is improved when the ACFs have a suitable pore structure.

Simultaneous Determination of Haloperidol and Its Metabolite, Reduced Haloperidol, in Plasma by Gas Chromatography Using Nitrogen Phosphorous Selective Detection (Gas Chromatography-Nitrogen Phosphorous Selective Detection을 이용한 혈장중 Haloperidol 및 대사체인 Reduced Haloperidol의 동시정량)

  • Park, Kyoung-Ho;Lee, Min-Hwa;Shim, Chang-Koo;Lee, Myung-Gull;Park, Jong-Sei
    • Journal of Pharmaceutical Investigation
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    • v.22 no.3
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    • pp.197-204
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    • 1992
  • A gas chromatographic method using nitrogen phosphorous selective detection was developed for simultaneous determination of haloperidol and its metabolite, reduced haloperidol, in human plasma. Combelen was used as internal standard, The method involved extraction and trimethylsilylation followed by the injection of $2-4\;{\mu}l$ of benzene layer, which was used to dissolve the trimethylsilylated derivatives of haloperidol and reduced haloperidol, onto SE-54 column [5% phenyl methyl silica fused capillary column, $16m{\times}0.22\;mm$ $(I.D.){\times}0.33\;{\mu}m$ (coated thickness)]. The temperature of column oven was programmed from $200^{\circ}C\;to\;300^{\circ}C$ at the increase rate of $10^{\circ}C/min and also the temperatures of injector and detector were set at $300^{\circ}C$. Helium was used as carrier gas and its flow rate was maintained at 30 ml/min. The detection was conducted with nitrogen phosphorous selective detector. The retention times for combelen, reduced haloperidol and haloperidol were found to be 9.14, 9.75 and 9.99 min, respectively. The detection limits for haloperidol and reduced haloperidol in human plasma were both 0.2 ng/ml. The coefficients of variation of the intra-assay were generally low (below 9.8%). The mean absolute recoveries of added haloperidol and reduced haloperidol from plasma were 72% and 84%, respectively. No interferences from endogenous substances were found.

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Dependence of cation ratio in Oxynitride Glasses on the plasma etching rate

  • Lee, Jung-Ki;Hwang, Seong-Jin;Lee, Sung-Min;Kim, Hyung-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.44.2-44.2
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    • 2009
  • Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

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Damage-Free Treatment of ITO Films using Nitrogen-Oxygen (N2-O2) Molecular DC Plasma

  • Kim, Hong Tak;Nguyen, Thao Phoung Ngoc;Park, Chinho
    • Current Photovoltaic Research
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    • v.3 no.4
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    • pp.112-115
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    • 2015
  • In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.