• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.45-59
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• 1996

Ultrafine powders(UFPs) of aluminum nitride(AlN) have been synthesized by chemical reactions in the nitrogen atmosphere and the gaseous aluminum evaporated from Al powders in thermal plasmas produced by a DC plasma torch. A synthesis system consisting of a plasma torch, a finely-controllable powder feeder, a reaction chamber, and a quenching-collection chamber have been designed and manufactured, and a filter for gathering AlN UFPs produced by the quenching process subsequent to the synthesis is set up. The synthesis process is interpreted by numerical analyses of the plasma-particle interaction and the chemical equilibrium state, respectively, and a fully-saturated fractional factorial test is used to find the optimum process conditions. The degrees and ultrafineness of synthesis are evaluated by means of SEM, TEM, XRD, and ESCA analyses. AlN UFPs synthesized in the optimum process conditions have polygonal shapes of the size of 5-100 nm, and their purities differ depending on collecting positions and filter types, and the maximum purity obtained is 72 wt% at the filter.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.26-33
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• 2002

This study was undertaken to obtain the fundamental knowledges on the weld deflects and it's realtime monitoring method. The paper describes the results of high speed photography, acoustic emission (AE) detection and plasma light emission (LE) measurements during $CO_2$ laser welding of STS 304 stainless steel and A5083 aluminum alloy in different welding condition. The characteristic frequencies of plasma and keyhole fluctuations at different welding speed and shield gases were measured and compared with the results of Fourier analyses of temporal AE and LE spectra, and they had considerably good agreement with keyhole and plasma fluctuation. Namely, the low frequency peaks of AE and LE shifted to higher frequency range with the welding speed increase, and leer the argon shield gas it was higher than that in helium and nitrogen gases. The low frequencies dominating in fluctuation spectra of LE probably reflect keyhole opening instability. It is possible to monitor the weld bead deflects by analyzing the acoustic and/or plasma light emission signals.

• Current Applied Physics
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• v.18 no.12
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.681-686
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• 2006

Plasma nitrocarburising and plasma post oxidation were performed to improve the wear and corrosion resistance of S45C and SCM440 steel by a plasma ion nitriding system. Plasma nitrocarburizing was conducted for 3h at $570^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the ${\varepsilon}-Fe_{2-3}$(N, C) phase. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite ($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the $15{\sim}25{\mu}m$ ${\varepsilon}-Fe_{2-3}$(N, C) compound layer was obtained by plasma post oxidation. A salt spray test and electrochemical testing revealed that in the tested 5% NaCl solution, the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer. Throttle valve shafts were treated under optimum plasma processing conditions. Accelerated life time test results, using throttle body assembled with shaft treated by plasma nitrocarburising and post oxidation, showed that plasma nitrocarburizing and plasma post oxidation processes could be a viable technology in the very near future which can replace $Cr^{6+}$ plating.

• Applied Chemistry for Engineering
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• v.26 no.4
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• pp.495-504
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• 2015

This work investigated the characteristics of a packed-bed plasma reactor system and the performances of the plasma reactors connected in series or in parallel for the decomposition of ethylene. Before the discharge ignition, the effective capacitance of the ${\gamma}$-alumina packed-bed plasma reactor was larger than that of the reactor without any packing, but after the ignition the effective capacitance was similar to each other, regardless of the packing. The energy of electrons created by plasma depends mainly on the electric field intensity, and was not significantly affected by the gas composition in the range of 0~20% (v/v) oxygen (nitrogen : 80~100% (v/v)). Among the various reactive species generated by plasma, ground-state atomic oxygen and ozone are understood to be primarily involved in oxidation reactions, and as the electric field intensity increases, the amount of ground-state atomic oxygen relatively decreases while that of nitrogen atom increases. Even though there are many parameters affecting the performance of the plasma reactor such as a voltage, discharge power, gas flow rate and residence time, all parameters can be integrated into a single parameter, namely, specific input energy (SIE). It was experimentally confirmed that the performances of the plasma reactors connected in series or in parallel could be treated as a function of SIE alone, which simplifies the scale-up design procedure. Besides, the ethylene decomposition results can be predicted by the calculation using the rate constant expressed as a function of SIE.

• Tribology and Lubricants
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• v.11 no.5
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• pp.59-65
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• 1995

Tribological behaviors of nitrogen incorporated amorphous diamond-like carbon films were experimentally measured under a vacuum ($3 \times 10^{-5}$ Torr) using a ball (AISI 52100 steel)-on-disk wear-rig. Nitrogen incorporated DLC films were deposited by r.f. plasma assisted chemical vapor deposition method. Mixtures of benzene and ammonia or nitrogen gases were used as the reaction gases for the r.f. PACVD, and Si (100) wafer was used as the substrate. In the tribo-test, effects of DLC film thickness and normal load in friction were measured and discussed. Results showed that friction of nitrogen incorporated DLC films from a mixture gas of benzene and ammonia was lower than that of 100% benzene, specially in the measurement of minimum coefficient of friction. Differences in frictional characteristics of nitrogen incorporated DLC films were explained with the changes in chemical structures of the films. Result also showed that friction of DLC films increased with the sliding contact cycle, which remarkably accompanied with roll-shaped wear debris. Mechanisms and roles of the polymer-like wear debris were presented and discussed.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.106-110
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• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1533_1534
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• 2009

This paper presents an atmospheric micro glow plasma-jet device. The device consists of four components; a thin Ni anode, a porous alumina insulater, a stainless steel cathode and an aluminum case. The Ni anode is fabricated using micromachining technology. The anode has 10 holes, of which the hole diameter and the depth are $250{\mu}m$ and $60{\mu}m$, respectively. The discharge test is performed in nitrogen gas at atmospheric pressure for 20 kHz AC bias. The breakdown voltage is 3.5 kV at gas flow rate of 4 L/min and the the plasma-jet is blown out to ambient at 5.5 kV. In order to verify the characteristics of plasma, the current and the voltage of device are measured. The maximum temperature of plasma is $37^{\circ}C$. The plasma is well generated and stable at high voltage.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.29-35
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• 2004

We have deposited the W-N diffusion barrier on Si substrate with $NH_3$ pulse plasma enhanced atomic layer deposition (PPALD) method by using $WF_6$ and $NH_3$ gases. The $WF_6$ gas reacts with Si that the surface corrosion occurs severely, but the $NH_3$ gas incorporated with pulse plasma and $WF_6$ gas are easily deposited W-N thin film without Si surface corrosion. Because the $NH_3$ with pulse plasma can be active species dissociated and chemisorbed on Si. Thus the Si surface are covered and saturated with nitrogen, which are able to deposit the W-N thin film. We also examine the deposition mechanism and the effect of $NH_3$ pulse plasma treatment.