• Title/Summary/Keyword: nitrogen implantation

Search Result 87, Processing Time 0.025 seconds

Blood profile test of sustained release formula of implantable bovine somatotropin in steers (비육우에서 이식형 bovine somatotropin 지속성 제형의 blood profile test)

  • Kim, Nam Joong
    • Korean Journal of Veterinary Research
    • /
    • v.49 no.1
    • /
    • pp.9-15
    • /
    • 2009
  • The present study was carried out to examine the sustained release effect of the implantable bovine somatotropin (SRI-BST) formula. In the blood profile test in steers, the bovine somatotropin concentration in serum by radioimmunoassay showed the peak concentration on the first day after the implantation of the SRI-BST formula, and concentration proceeded for 5 days (p < 0.05). The insulin-like growth factor-1 concentration showed the peak concentration on the seventh day after implantation of the SRIF-BST formula, and concentration proceeded for 10 days (p < 0.05). The glucose showed the peak concentration on the first day after implantation of the SRI-BST formula, and concentration continued for 3 days (p < 0.05). The blood urea nitrogen showed the lowest concentration on the third day after implantation of the SRI-BST formula, and concentration continued for 7 days (p < 0.05). These results proved that the SRIF-BST formula was the sustained release effects in steers.

Improvement of Gate Dielectric Characteristics in MOS Capacitor by Deuterium-ion Implantation Process (중수소 이온 주입에 의한 MOS 커패시터의 게이트 산화막 절연 특성 개선)

  • Seo, Young-Ho;Do, Seung-Woo;Lee, Yong-Hyun;Lee, Jae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.24 no.8
    • /
    • pp.609-615
    • /
    • 2011
  • This paper is studied for the improvement of the characteristics of gate oxide with 3-nm-thick gate oxide by deuterium ion implantation methode. Deuterium ions were implanted to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas to nitrogen was performed to remove the damage of D-implantation. We simulated the deuterium ion implantation to find the optimum condition by SRIM (stopping and range of ions in matter) tool. We got the optimum condition by the results of simulation. We compare the electrical characteristics of the optimum condition with others terms. We also analyzed the electrical characteristics to change the annealing conditions after deuterium ion implantation. The results of the analysis, the breakdown time of the gate oxide was prolonged in the optimum condition. And a variety of annealing, we realized the dielectric property that annealing is good at longer time. However, the high temperature is bad because of thermal stress.

Wear Properties of Biocompatible Ti Implant due to Nitrogen Ion Implantation (질소이온주입에 따른 생체안전성 티타늄 임플란트의 마모특성)

  • 최종운;손선희;변응선;정용수
    • Journal of the Korean Society of Safety
    • /
    • v.14 no.4
    • /
    • pp.126-134
    • /
    • 1999
  • In this study, plasma source ion implantation was used to improve the wear properties of biocompatible titanium implant. In order to observe the effect of ion energy and dose on wear property of titanium implant, pin-on-disk type wear tests in Hank's solution were carried out. The friction coefficient of ion implanted specimens were increased from 0.47 to 0.65 under high energy and ion dose conditions. As increasing ion energy and ion dose, the amount of wear was reduced.

  • PDF

Effect of Nitrogen Ion Implantation on Corrosion Resistance of Biocompatible Ti Implant (질소이온의 주입이 생체안전성 티타늄임플란트의 내식성에 미치는 영향)

  • 최종운;손선희
    • Journal of the Korean Society of Safety
    • /
    • v.14 no.3
    • /
    • pp.134-139
    • /
    • 1999
  • In this study, PSII(plasma source ion implantation) was used to improve the biocompatibility of bone-anchored Ti implant. According to potentiodynamic anodic polarization test in deaerated Hank's solution, open circuit potential of ion implanted specimens were increased compare to that of unimplanted specimen ; besides, passive current density and critical anodic current density of ion implanted specimens were lower than unimplanted specimen.

  • PDF

Surface Properties of Plasma Nitrogen Ion Implanted Stainless Steel (플라즈마 질소 이온주입한 오스테나이트 스테인레스 강의 표면특성)

  • Kim, G.H.;Nikiforov, S.A.;Lee, H.S.;Rim, G.H.
    • Proceedings of the KIEE Conference
    • /
    • 1999.07e
    • /
    • pp.2253-2255
    • /
    • 1999
  • Plasma source ion implantation (PSII) is a non-line-of-sight technique for surface modification of materials which is effective for non-planar targets. Properties such as hardness, corrosion resistance, wear resistance and friction can be improved without affecting the bulk properties of the material. Type 304 austenitic stainless steel was treated by nitrogen plasma ion implantation at a target bias of -50kV. Surface properties, including microhardness and ion depth profile, were studied.

  • PDF

The Relation Among the Linear Energy Transfer and Changes of Polyphenylene Sulfide Surface by ion Implantation (이온주입에 의한 고분자(Polyphenylene Sulfide)표면 특성 변화와 선에너지전달(Pineal Energy Transfer)과의 관계)

  • Lee, Jae S.;Kim, Bo-Young;Lee, Jae-Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.5
    • /
    • pp.407-413
    • /
    • 2005
  • Ion implantation provides a unique way to modify the mechanical, optical and electrical properties of polymer by depositing the energy of ions in the material on the atomic scale. Implantation of ions into the polymers generally leads to a radiation damage, which, in many cases, modifies the properties of the surface and bulk of the material. These modifications result from the changes of the chemical structure caused in their turn by changing the chemical bonding when the incident ions cut the polymer chains, breaks covalent bonds, promotes cross-linking, and liberates certain volatile species. We studied the relation among the linear energy transfer (LET) and changes of surface microstructure and surface resistivity on PPS material using the high current ion implantation technology The surface resistivity of nitrogen implanted PPS decreased to $10^{7}{\Omega}/cm^{2}$ due to the chain scission, cross linking, ${\pi}$ electron creation and mobility increase. In this case, the surface conductivity depend on the 1-dimensional hopping mechanism.

Corrosion resistance of a carbon-steel surface modified by three-dimensional ion implantation and electric arc.

  • Valbuena-Nino, E.D.;Gil, L.;Hernandez, L.;Sanabria, F.
    • Advances in materials Research
    • /
    • v.9 no.1
    • /
    • pp.1-14
    • /
    • 2020
  • The hybrid method of three-dimensional ion implantation and electric arc is presented as a novel plasma-ion technique that allows by means of high voltage pulsed and electric arc discharges, the bombardment of non-metallic and metallic ions then implanting upon the surface of a solid surface, especially out of metallic nature. In this study AISI/SAE 4140 samples, a tool type steel broadly used in the industry due to its acceptable physicochemical properties, were metallographically prepared then surface modified by implanting titanium and simultaneously titanium and nitrogen particles during 5 min and 10 min. The effect of the ion implantation technique over the substrate surface was analysed by characterization and electrochemical techniques. From the results, the formation of Ti micro-droplets upon the surface after the implantation treatment were observed by micrographs obtained by scanning electron microscopy. The presence of doping particles on the implanted substrates were detected by elemental analysis. The linear polarization resistance, potentiodynamic polarization and total porosity analysis demonstrated that the samples whose implantation treatment with Ti ions for 10 min, offer a better protection against the corrosion compared with non-implanted substrates and implanted at the different conditions in this study.

MODIFICATION OF INITIALLY GROWN BN LAYERS BY POST-N$^{+}$ IMPLANTATION

  • Byon, E-S.;Lee, S-H.;Lee, S-R.;Lee, K-H.;Tian, J.;Youn, J-H.;Sung, C.
    • Journal of the Korean institute of surface engineering
    • /
    • v.32 no.3
    • /
    • pp.351-355
    • /
    • 1999
  • BN films with a high content of cubic phase has been deposited by a variety of techniques. It is well known that c-BN films grow with a unique microstructure consisting of $sp^2$ and $sp^{3-}$ bonded layers. Because of existence of the initially grown $sp^{2-}$ /bonded layer, BN films are not adhesive to the substrates. In this study, post-N$^{+ }$ / implantation was applied to improve the adhesion of the films. A Monte Carlo program TAMIX was used to simulate this modification process. The simulation showed nitrogen concentration profile at $1200\AA$ in depth in case of 50keV -implantation energy. FTIR spectra of the $N^{+}$ implanted specimens demonstrated a strong change of absorption band at 1380 cm$^{ -1 }$The films were also investigated by HRTEM. From these results, it is concluded that the post ion implantation could be an effective technique which improves the adhesion between BN film and substrate.

  • PDF