• Title/Summary/Keyword: nitride residues

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Controllable Etching of 2-Dimentional Hexagonal Boron Nitride by Using Oxygen Capacitively Coupled Plasma

  • Qu, Deshun;Yoo, Won Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.170-170
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    • 2013
  • We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

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Analysis on the defect and scratch of Chemical Mechanical Polishing Process (CMP 공정의 Defect 및 Scratch의 유형분석)

  • Kim, Hyung-Gon;Kim, Chul-Bok;Kim, Sang-Yong;Lee, Cheol-In;Kim, Tae-Hyung;Chang, Eui-Goo;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.189-192
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    • 2001
  • Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

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Analysis on the defect and scratch of Chemical Mechanical Polishing process (CMP 공정의 Defect 및 Scratch의 유형분석)

  • 김형곤;김철복;정상용;이철인;김태형;장의구;서용진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.189-192
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    • 2001
  • Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP process, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned Problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

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Effects of Trench Depth on the STI-CMP Process Defects (트랜치 깊이가 STI-CMP 공정 결함에 미치는 영향)

  • 김기욱;서용진;김상용
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.4
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    • pp.17-23
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    • 2002
  • The more productive and stable fabrication can be obtained by applying chemical mechanical polishing (CMP) process to shallow trench isolation (STI) structure in 0.18 $\mu\textrm{m}$ semiconductor device. However, STI-CMP process became more complex, and some kinds of defect such as nitride residue, tern oxide defect were seriously increased. Defects like nitride residue and silicon damage after STI-CMP process were discussed to accomplish its optimum process condition. In this paper, we studied how to reduce torn oxide defects and nitride residue after STI-CMP process. To understand its optimum process condition, We studied overall STI-related processes including trench depth, STI-fill thickness and post-CMP thickness. As an experimental result showed that as the STI-fill thickness becomes thinner, and trench depth gets deeper, more tern oxide were found in the CMP process. Also, we could conclude that low trench depth whereas high CMP thickness can cause nitride residue, and high trench depth and over-polishing can cause silicon damage.

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Chemical Mechanical Polishing: A Selective Review of R&D Trends in Abrasive Particle Behaviors and Wafer Materials (화학기계적 연마기술 연구개발 동향: 입자 거동과 기판소재를 중심으로)

  • Lee, Hyunseop;Sung, In-Ha
    • Tribology and Lubricants
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    • v.35 no.5
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    • pp.274-285
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    • 2019
  • Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

Synthesis and characterization of AlN nanopowder by the microwave assisted carbothermal reduction and nitridation (CRN)

  • Chun, Seung-Yeop;Chun, Myoung-Pyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.5
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    • pp.223-228
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    • 2017
  • Aluminum nitride (AlN) powder was successfully synthesized at low temperature via carbothermal reduction and nitridation (CRN) assisted by microwave heating. The synthesis processes of AlN powder were investigated with X-ray diffraction, FE-SEM, FT-IR and TGA/DSC. Aluminum nitrate was used as an oxidizer and aluminum source, urea as fuel, and glucose as carbon source. These starting materials were mixed with D.I water and reacted in a flask at $100^{\circ}C$ for 20 minutes. After the reaction was finished, black foamy intermediate product was formed, which was considered to be an amorphous $Al_2O_3$ particles through intermediate product obtained by solution combustion synthesis (SCS) at the results of X-ray diffraction patterns and FT-IR. This intermediate product was nitridated at temperatures of $1300^{\circ}C$ and $1400^{\circ}C$ in $N_2$ atmosphere by a microwave heating furnace and then decarbonated at $600^{\circ}C$ for 2 hours in air. It should be noticed from FE-SEM images that as nitridated particles, identified as AlN from X-ray diffraction patterns, are covered with carbon residues. After decarbonating the nitridated powders, the spherical pure AlN powders were obtained without alumina and their particle sizes were dependent on the nitridating temperature with high temperature of $1400^{\circ}C$ giving large particles of around 70~100 nm.