Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.11b
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- Pages.189-192
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- 2001
Analysis on the defect and scratch of Chemical Mechanical Polishing Process
CMP 공정의 Defect 및 Scratch의 유형분석
- Kim, Hyung-Gon ;
- Kim, Chul-Bok ;
- Kim, Sang-Yong ;
- Lee, Cheol-In ;
- Kim, Tae-Hyung ;
- Chang, Eui-Goo ;
- Seo, Yong-Jin
- 김형곤 (조선이공대학 전기과) ;
- 김철복 (대불대학교 전기공학과) ;
- 김상용 (아남반도체 (주) FAB 사업부) ;
- 이철인 (안산공과대학 전기과) ;
- 김태형 (여주대학 전기과) ;
- 장의구 (여주대학 전기과) ;
- 서용진 (대불대학교 전기공학과)
- Published : 2001.11.08
Abstract
Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.
Keywords
- CMP (Chemical Mechanical Polishing);
- STI (Shallow Trench Isolation);
- torn oxide defect;
- nitride residue;
- active region damage;
- metal bridge;
- stringer