• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.43-51
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• 2023

본 논문에서는 전기차 전력변환 시스템의 근간이 되는 전력반도체 소자의 발전 방향과 차세대 전력반도체 소자인 wide bandgap (WBG)의 특징에 관해 소개하고자 한다. 현재까지의 주류인 Si insulated gate bipolar transistor (IGBT)의 특징에 관해 소개하고, 제조사 별 Si IGBT 개발 방향에 대해 다루었다. 또한 대표적인 WBG 전력반도체 소자인 SiC metal-oxide-semiconductor field-effect transistor (MOSFET)이 가지는 특징을 고찰하여 종래의 Si IGBT 소자 대비 SiC MOSFET이 가지는 효용 및 필요성에 대해 서술하였다. 또한 현 시점에서의 GaN 전력반도체 소자가 가지는 한계 및 그로 인해 전기자동차용 전력변환모듈 용으로 사용하기에 이슈인 점을 서술하였다.

• Design & Manufacturing
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• 제17권2호
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• pp.22-26
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• 2023

As Light-Emitting Diodes(LEDs) continue to advance in performance, their application in automotive lamps is increasing. Automotive LEDs utilize light guides not only for aesthetics but also to control light quantity and direction. Light guides employ patterns of a few hundred micrometers(㎛) to regulate the light, and the surface roughness(Ra) of these patterns can reach tens of nanometers(nm). Given that these light guides are produced through injection molding, mold processing technology with high surface quality micro-patterns is required. This study serves as a preliminary investigation into the development of high surface quality micro-pattern processing technology. It examines the surface roughness of the workpiece based on the cutting direction of the pattern and the cutting fluid type when cutting micro-patterns on STAVAX steel using cubic Boron Nitride(cBN) tools. The experiments involved machining a step-shaped micro-pattern with a height of 60 ㎛ and a pitch of 400 ㎛ in a 22×22 mm area under identical cutting conditions, with only the cutting direction and cutting fluid type being varied. The machining results of four cases were compared, encompassing two cases of cutting direction(parallel to the pattern, orthogonal to the pattern) and two cases of cutting fluid type (flood, mist). Consequently, the Ra value was found to be the highest(Ra 128.33 nm) when machining with the flood type in parallel to the pattern, while it was the lowest(Ra 95.22 nm) when machining with the mist type orthogonal to the pattern. These findings confirm that there is a difference of up to 25.8 % in the Ra value depending on the cutting direction and cutting fluid type.

• Composites Research
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• 제36권5호
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• pp.377-382
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• 2023

그래핀 기반 소자의 성능을 개선하기 위해서는 그래핀과 기판 사이의 계면 상호 작용을 이해하는 것이 중요하다. 본 연구에서는 유전체 기판에 놓인 단일층 그래핀의 접착에너지를 모드 I 시험을 통해 측정하였다. 메탄과 수소 가스 분위기에서 화학기상증착법(CVD)을 통해 구리 포일 위에 대면적 단일층 그래핀을 합성하였다. 합성한 그래핀을 폴리머를 이용한 습식 전사 공정을 통해 유전체 기판 위에 전사하였다. 이중외팔보 형상을 이용한 모드 I 시험을 통해 기판 위에 올려진 그래핀을 기계적으로 박리하였다. 이 때, 얻어지는 힘-변위 곡선을 분석하여 접착에너지를 평가하였는데, 산화실리콘 기판에 대해서는 1.13 ± 0.12 J/m², 질화실리콘 기판에 대해서는 2.90 ± 0.08 J/m²의 접착에너지를 나타냈다. 본 연구를 통해 유전체 기판 위에 올려진 CVD 그래핀의 계면 상호 작용력에 대해 정량적인 측정을 진행하였다.

• 한국항행학회논문지
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• 제26권6호
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• pp.487-495
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• 2022

본 논문에서는 차세대소형위성2호의 X 대역 합성 개구 레이더(SAR; synthetic aperture radar)에 탑재하기 위한 고출력 송·수신 모듈의 설계 및 개발에 관하여 논한다. 모듈은 X 대역의 대상 주파수 범위에서 100 MHz 의 대역폭을 갖는 고출력 펄스 신호를 출력하며, 수신신호에 대해 저잡음 증폭 기능을 수행한다. 제작된 모듈의 송신경로는 200 watt (53.01 dBm) 이상의 출력 신호 세기, 0.35 dB의 펄스폭 기울기, 송신 신호 출력간 0.04 dB 의 신호 세기 변화 및 1.7 ˚ 의 위상 변화를 갖고, 수신경로는 3.81 dB 의 잡음지수, 37.38 ~ 37.46 dB 의 이득을 가짐으로써, 요구되는 성능을 만족함을 확인하였다. 제작된 모듈은 차세대소형위성2호 비행모델에 장착되어 있으며, 추후 누리호에 탑재되어 발사될 예정이다.

• 한국표면공학회지
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• 제57권3호
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• pp.165-178
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• 2024

In semiconductor memory device manufacturing, the capability for high aspect ratio contact (HARC) etching determines the density of memory device. Given that there is no standardized definition of "high" in high aspect ratio, it is crucial to continuously monitor recent technology trends to address technological gaps. Not only semiconductor memory manufacturing companies such as Samsung Electronics, SK Hynix, and Micron but also semiconductor manufacturing equipment companies such as Lam Research, Applied Materials, Tokyo Electron, and SEMES release annual reports on HARC etching technology. Although there is a gap in technological focus between semiconductor mass production environments and various research institutes, the results from these institutes significantly contribute by demonstrating fundamental mechanisms with empirical evidence, often in collaboration with industry researchers. This paper reviews recent studies on HARC etching and the study of dielectric etching in various technologies.

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.167-179
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• 2024

This study explores the feasibility of employing (U, Th)-based accident tolerant fuels (ATFs), specifically (_0.8UO₂, _0.2ThO₂), (_0.8UN, _0.2ThN), and (_0.8UC, _0.2ThC). The investigation assesses the overall performance of these proposed fuel materials in comparison to the conventional UO₂, focusing on deep neutronic and thermal-hydraulic (Th) analyses. Neutronic analysis utilized the MCNPX code, while COMSOL Multiphysics was employed for thermal-hydraulic analysis. The primary objective of this research is to overcome the limitations associated with traditional UO₂ fuel by exploring alternative fuel materials that offer advantages in terms of abundance and potential improvements in performance and safety. Given the limited abundance of UO₂, long-term sustainable nuclear energy production faces challenges. From a neutronic standpoint, the U-Th based fuels demonstrated remarkable fuel cycle lengths, except (_0.8UN, _0.2ThN), which exhibited the minimum fuel cycle length and, consequently, the lowest fuel burn-up. Regarding thermal-hydraulic performance, (_0.8UN, _0.2ThN) exhibited outstanding performance with significant margins against fuel melting compared to the other materials. Overall, when considering the integrated performance, the most favourable results were obtained with the use of the (_0.8UC, _0.2ThC) fuel configurations. This study contributes valuable insights into the potential benefits of (U, Th)-based ATFs as a promising avenue for enhanced nuclear fuel performance.

• 청정기술
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• 제30권1호
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• pp.55-61
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• 2024

연료전지의 산소환원반응용 백금 촉매의 높은 비용을 극복하기 위하여 나노 구조 제어를 통한 고성능의 백금 합금 촉매 개발 연구가 활발히 수행되고 있다. 본 연구에서는 탄소에 담지된 니켈-니켈 질화물 복합체와 백금 이온 간의 갈바닉 치환 반응 시 용액의 pH 조절을 통한 촉매의 나노구조를 중공형이나 코어-쉘 구조로 제어하는 방법을 제시하였다. X선 회절 분석과 투과전자현미경, 유도결합 플라즈마를 이용한 분석을 통해 합성 조건에 따른 금속의 상태와 함량 및 합금 입자의 형상에 대한 물리적 특성 평가를 수행하였다. 제조된 촉매를 산소환원반응 촉매로 적용하였으며 상용 백금 촉매 대비 1.7배(중공형 촉매) 및 1.9배(코어-쉘 구조 촉매) 개선된 전기화학적 활성 면적 당 활성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• 한국재료학회지
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• 제3권1호
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• pp.43-49
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• 1993

AI킬드한 극저탄소강에 Ti, Nb등의탄화물 또는 질화물 형성원소를 첨가하면 우수한 디프드로잉특성과 내시효성을 나타내는 강판을 얻을 수 있다고 알려져 있으므로 본 연구에서는 Ti및 Nb를 단독 또는 동시에 첨가하거나 B를 추가로 첨가한 고강도 극저탄소 강판을 제조하여 각각의재결정 집합조직과 기계적 성질을 측정비교하여 보았다. 역극점도에 나타난 집합조직강도의 변화를 조사한 결과 어닐링처리에 의하여 (100)면 강도와 (111)면 강도의 변화가 가장 많이 나타난 것은 Nb첨가강이며, Nb와 Ti를 단독으로 첨가한 강과 Ti를 단독으로 첨가한 강은 변화정도가 비슷하였다.극점도를 비교하면,Nb와 Ti를 동시에 첨가한강, Nb를 단독으로 첨가한 강 그리고 Ti를 단독으로 첨가한강 모두 냉간 압연한 상태에서는{112}<110>집합조직이 발달하였으며 어닐링처리한 후에는 {111}<112>집합조직이 잘 발달하였다. 그러나 세 종류의 강간에 집합조직의 차이는 별로 없었다. 결정립도와 관계가 깊은 경도에서는 결정립도가 가장 작은 Nb 및 Ti동시첨가강에서 경도가 가장 높고, Nb단독첨가강, Ti단독첨가강의 순서로 감소하는 경향을 보였다.

• 한국재료학회지
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• 제22권4호
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• pp.185-189
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• 2012

We report plasma-assisted molecular beam epitaxy of $In_XGa_{1-X}N$ films on c-plane sapphire substrates. Prior to the growth of $In_XGa_{1-X}N$ films, GaN film was grown on the nitride c-plane sapphire substrate by two-dimensional (2D) growth mode. For the growth of GaN, Ga flux of $3.7{\times}10^{-8}$ torr as a beam equivalent pressure (BEP) and a plasma power of 150 W with a nitrogen flow rate of 0.76 sccm were fixed. The growth of 2D GaN growth was confirmed by $in-situ$ reflection high-energy electron diffraction (RHEED) by observing a streaky RHEED pattern with a strong specular spot. InN films showed lower growth rates even with the same growth conditions (same growth temperature, same plasma condition, and same BEP value of III element) than those of GaN films. It was observed that the growth rate of GaN is 1.7 times higher than that of InN, which is probably caused by the higher vapor pressure of In. For the growth of $In_xGa_{1-x}N$ films with different In compositions, total III-element flux (Ga plus In BEPs) was set to $3.7{\times}10^{-8}$ torr, which was the BEP value for the 2D growth of GaN. The In compositions of the $In_xGa_{1-x}N$ films were determined to be 28, 41, 45, and 53% based on the peak position of (0002) reflection in x-ray ${\theta}-2{\theta}$ measurements. The growth of $In_xGa_{1-x}N$ films did not show a streaky RHEED pattern but showed spotty patterns with weak streaky lines. This means that the net sticking coefficients of In and Ga, considered based on the growth rates of GaN and InN, are not the only factor governing the growth mode; another factor such as migration velocity should be considered. The sample with an In composition of 41% showed the lowest full width at half maximum value of 0.20 degree from the x-ray (0002) omega rocking curve measurements and the lowest root mean square roughness value of 0.71 nm.