• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.165-170
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• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.783-790
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• 2017

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.360-369
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• 2012

The causes of showing different subthreshold slopes (SS) in programmed and erased states for two different charge trap flash (CTF) memory devices, SONOS type flash memory with gate-all-around (GAA) structure and TANOS type NAND flash memory with planar structure were investigated. To analyze the difference in SSs, TCAD simulation and low-frequency noise (LFN) measurement were fulfilled. The device simulation was performed to compare SSs considering the gate electric field effect to the channel and to check the localized trapped charge distribution effect in nitride layer while the comparison of noise power spectrum was carried out to inspect the generation of interface traps ($N_{IT}$). When each cell in the measured two memory devices is erased, the normalized LFN power is increased by one order of magnitude, which is attributed to the generation of $N_{IT}$ originated by the movement of hydrogen species ($h^*$) from the interface. As a result, the SS is degraded for the GAA SONOS memory device when erased where the $N_{IT}$ generation is a prominent factor. However, the TANOS memory cell is relatively immune to the SS degradation effect induced by the generated $N_{IT}$.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.113-119
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• 2000

In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.290-297
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• 2009

In case of using Asymmetric Bipolar Pulsed DC (ABPD) power generator, thin film is efficiently deposited as ions are getting higher energy by suppressing target poisoning and electric arc. In this article, the mechanical properties of CNx thin films deposited on the STS 316L were compared with DC and ABPD power generators. The CNx thin films deposited with ABPD clearly improved wear resistance by higher ratio of sp3CN as compared with DC. Nb interlayer affected to increase the value of 10N of adhesion between CNx thin films and substrate. But, CNx thin films deposited with ABPD couldn't endure to wear load and decreased wear resistance as the films were too thinner than substrate. Nevertheless the higher substrate bias energy applied to perform the dense films, it wasn't shown benefits about the wear properties from DC sputtering. But, in case of using ABPD sputtering, the wear resistance was largely improved without changing morphology despite of thin films.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.323-328
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• 2007

This study has been investigated the effect of high temperature gas nitriding (HTGN) heat treatment of STS 444 (18Cr-0.01Ni-0.01C-0.2Nb) ferritic stainless steel in an atmosphere of nitrogen gas at the temperature range between $1050^{\circ}C\;and\;1150^{\circ}C$. The surface layer was changed into martensite and austenite with the nitrides of NbCrN by HTGN treatment. Due to the precipitation of nitrides and matrensite formation, the hardness of the surface layer showed $400Hv{\sim}530Hv$. The nitrogen concentration of the surface layer appeared as 0.05%, 0.12% and 0.92%, respectively, at $1050^{\circ}C,\;1100^{\circ}C\;and\;1150^{\circ}C$. When the nitrogen is permeated from surface to interior, Nb and Cr, which have strong affinities with nitrogen, also move from interior to surface. Therefore it is considered that this counter-current of atoms promotes the formation of NbCrN at the surface layer.

• Journal of the Korean Society for Heat Treatment
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• v.20 no.6
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• pp.311-317
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• 2007

This study examined the phase changes, nitride precipitation and variation in mechanical properties of STS 304, STS 321 and STS 316L austenitic stainless steels after high temperature gas nitriding (HTGN) at temperature ranges from $1050^{\circ}C\;to\;1150^{\circ}C$. Fine round type of $Cr_2N$ nitrides were observed in the surface layers of 304 and 316L steels, even more in STS 321. Additionally, square type of TiN was found in STS 321 austenitic matrix too. As a result of many precipitates in the surface layer of the STS 321, it was seen $370{\sim}470Hv$ hardness variation depending on the HTGN treatment conditions, and interior region of austenite represented 150Hv. The surface hardness value of STS 304 and STS 316L showed $255{\sim}320Hv$, respectively. The nitrogen content was shown 0.27, 1.7 and 0.4% respectively at the surface layers of the STS 304, STS 321 and STS 316L. After the HTGN it was shown the improvement of corrosion resistance of the STS 321 and STS 316L compared with solution annealed steels in the solution of 1N $H_2SO_4$ whereas the STS 304 was not.

• Journal of Welding and Joining
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• v.21 no.1
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• pp.107-113
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• 2003

Joining of $Si_3N_4$ to $Si_3N_4$ with crystallized glass solder was studied. $SiO_2-Al_2O_3-MgO$ glass with $P_2O_5$ as a crystallizing reagent was used as a solder. To improve the hish temperature toughness of joined specimen, two stage heat treatment was applied to Joined sample for the crystallization of joined layer, Two factors, i.e. thickness of soldered layer and crystallization were taken and thier effects on joining strength were investigated by a SEM-EDX observation of joined interface and bending strength both at room and elevated temperatures. Obtained results are summarized as follows: (1) Nitrogen diffused from $Si_3N_4$ to solder during the Joining process. Average amount of nitrogen in soldered layer depended on the thickness of the soldered layer and increased with decrease of the thickness. (2) Joining strength of the specimen having a thinner soldered layer was stronger than that of thicker layer. This can be mainly attributed to the difference of the nitrogen content in the soldered layer. (3) Higher content of nitrogen in solder brought forth higher viscosity of the solder. Hence the crystallization of the solder become more difficult in thinner layer of the solder than thicker one. (4) Thus, the effect of crystallization was evaluated mostly by the thicker layer specimen. Crystallization of soldered layer improved markedly the fracure strength of joining at higher temperatures than the softening temperature of glass solder.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.155-158
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• 2012

In this work, AlON-$Al_2O_3$ coatings were prepared on Al2021 alloy by the electrolytic plasma processing (EPP) method. The experimental electrolytes include: 2 g/l NaOH as the electrolytic conductive agent, 10 g/l $Na_2AlO_2$ as the alumina formative agent, and 0.5 g/l $NaNO_2$, $NaNO_3$, and $NH_4NO_3$ as the nitride inducing agents. The effects of different nitrogen inducing agents were studied by a combined compositional and structural analyses of the ceramic coatings carried out by Xray diffractometry (XRD) and scanning electron microscopy (SEM) for the specimens EPP-treated at room temperature for 15 min under a hybrid voltage of 260 DC along with an AC 50 Hz power supply (200 V). Microhardness tests and wear tests were carried out to correlate the evolution of the microstructure and the resulting mechanical properties. Potentiodynamic polarizations and immersion corrosion tests were carried out in 3.5wt% NaCl water solutions under static conditions in order to evaluate the corrosion behavior of the coated samples. The results demonstrate that $NaNO_2$ is proven to be a good nitrogen inducing agent to produce high quality AlON-$Al_2O_3$ ceramic coatings.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.194-198
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• 2010

Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a $B_4C$ layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a $B_4C$ target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and $B_4C$ were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of $sp^3$ BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.