• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.21 no.2
• /
• pp.123-129
• /
• 2022

Quartz (SiO2) has high abrasion and heat resistances and excellent chemical and mechanical properties; therefore, it is used in various industries, such as machinery, chemistry, optics, and medicine. Quartz is a high-hardness and brittle material and is classified as the topmost difficult-to-cut material, which is because of the cracking or chipping at the edge during processing. Corner wear, such as cracks and chippings that occur during cutting, is a major cause for the deterioration in the machining quality. Therefore, many researchers are investigating various techniques to process quartz effectively. However, owing to the mechanical properties of quartz, most studies have been conducted on grinding, micromachining, and microdrilling. Few studies have been conducted on quartz processing. The purpose of this study was to analyze the machining characteristics according to the machining factors during the slot machining of quartz using a cubic boron nitride (CBN) tool and to select the optimal machining conditions using the Taguchi method. The machining experiment was performed considering three process variables: the spindle speed, feed rate, and depth of cut. The cutting force and surface roughness were analyzed according to the processing conditions.

• Journal of Powder Materials
• /
• v.29 no.1
• /
• pp.8-13
• /
• 2022

In this study, we have prepared a Ti-6Al-4V/V/17-4 PH composite structure via a direct energy deposition process, and analyzed the interfaces using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The joint interfaces comprise two zones, one being a mixed zone in which V and 17-4PH are partially mixed and another being a fusion zone in the 17-4PH region which consists of Fe+FeV. It is observed that the power of the laser used in the deposition process affects the thickness of the mixed zone. When a 210 W laser is used, the thickness of the mixed zone is wider than that obtained using a 150 W laser, and the interface resembles a serrated shape. Moreover, irrespective of the laser power used, the expected σ phase is found to be absent in the V/17-4 PH stainless steel joint; however, many VN precipitates are observed.

• Korean Journal of Materials Research
• /
• v.31 no.12
• /
• pp.697-703
• /
• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• Nuclear Engineering and Technology
• /
• v.54 no.2
• /
• pp.653-660
• /
• 2022

The interaction between UN and CdCl₂ in the LiCl-KCl molten eutectic was studied at 1023 K. The chlorination was monitored by sampling and recording the redox potential of the medium. At 1023 K the chlorination of UN with cadmium chloride in the molten LiCl-KCl eutectic proceeds completely and results in the formation of uranium chlorides. The melts of the LiCl-KCl-UCl₃ or LiCl-KCl-UCl₄ compositions can be obtained by the end of experiment depending on the presence of metallic cadmium in the reaction zone. The higher the concentration of the chlorinating agent, the faster the reaction rate. At [CdCl₂]/[UN] = 1.65 (10% excess) the reaction proceeds to completion in about 7.5 h. At [CdCl₂]/[UN] = 7 the complete chlorination takes 2.5-3 h.

• Journal of Sensor Science and Technology
• /
• v.31 no.4
• /
• pp.271-277
• /
• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Electronics and Telecommunications Trends
• /
• v.37 no.5
• /
• pp.11-21
• /
• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Corrosion Science and Technology
• /
• v.22 no.1
• /
• pp.30-35
• /
• 2023

Hafnium nitride (HfN) thin films were fabricated by mid-frequency magnetron sputtering (mfMS) and direct current magnetron sputtering (dcMS) and their mechanical and structural properties were compared. In particular, changes in the HfN film properties were observed by changing the pulse frequency of mfMS between 5 kHz, 15 kHz, and 30 kHz. The crystalline structure, microstructure, 3D morphology, and mechanical properties of the HfN films were compared by x-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and nanoindentation tester, respectively. HfN film deposited by mfMS showed a smoother and denser microstructure as the frequency increased, whereas the film deposited by dcMS showed a rough and sloppy microstructure. A single δ-HfN phase was observed in the HfN film made by mfMS with a pulse frequency of 30 kHz, but mixed δ-HfN and HfN_0·4 phases were observed in the HfN film made by dcMS. The mechanical properties of HfN film made by mfMS were improved compared to film made by dcMS.

• Design & Manufacturing
• /
• v.17 no.1
• /
• pp.33-39
• /
• 2023

The ball end mill is a type of cutting tool that is widely used to process complex mold shapes including aspheric surfaces. Unlike the flat end mill in which the cutting edge is formed on the cylindrical handle, the cutting edge is formed from the cylindrical handle to the hemispherical shape, which is advantageous for processing curved shapes. However, since the cutting speed continuously changes during machining due to the helix angle of the cutting edge or the machining inclination angle, it is difficult to obtain a precise machined surface. Therefore, in this paper, machining was performed while changing the helix angle of the ball end mill and the angle of the machining slope under the same cutting conditions for STD 11 material, which is widely used as a mold material. Through this, the effect of the two variables on the roughness of the machined surface was analyzed. As a result, if the helix angle was 0 degrees, it showed the best surface roughness of Ra. 0.16 ㎛. When the helix angle was 20 degrees, the best surface roughness of Ra. 0.18 ㎛ was occurred.

• Membrane and Water Treatment
• /
• v.14 no.3
• /
• pp.115-120
• /
• 2023

The design theory for nanoporous filtration membranes needs to be established. The present study shows that the performance and technical advancement of nanoporous filtration membranes are determined by the fundamental parameter I (in the unit Watt^1/2) which is formulated as a function of the shear strength of the liquid-pore wall interface, the radius of the filtration pore, the membrane thickness, and the bulk dynamic viscosity of the flowing liquid. This parameter determines the critical power loss on a single filtration pore for initiating the wall slippage, which is important for the flux of the membrane. It also relates the membrane permeability to the power cost by the filtration pore. It is shown that for biological cellular membranes its values are on the scale 1.0E-8Watt^1/2, for mono-layer graphene membranes its values are on the scale 1.0E-9Watt^1/2, and for nanoporous membranes made of silica, silicon nitride or silicon carbonized its values are on the scale 1.0E-5Watt^1/2. The scale of the value of this parameter directly measures the level of the performance of a nanoporous filtration membrane. The carbon nanotube membrane has the similar performance with biological cellular membranes, as it also has the value of I on the scale 1.0E-8Watt^1/2.

• Current Optics and Photonics
• /
• v.7 no.2
• /
• pp.157-165
• /
• 2023

We propose a highly directional waveguide grating antenna for an optical phased array, achieving high directionality of more than 97% by interleaving the trenches with different etching depths in the silicon nitride layer, and adopting a multilayered structure. Meanwhile, the multilayered structure reduces the perturbation strength, which enables a centimeter-scale radiation length. The beam-steering range is 13.2°, with a wavelength bandwidth of 100 nm. The 1-dB bandwidth of the grating is 305 nm. The multilayered grating structure has a large tolerance to the fabrication variation and is compatible with CMOS fabrication techniques.