• Current Photovoltaic Research
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• v.8 no.2
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• pp.50-53
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• 2020

GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce³⁺ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.3
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• pp.115-120
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• 2012

It has been known that the ferritic stainless steel can be changed to martensitic stainless steel when nitrogen is added. However the high hardness of martensitic stainless steel prevents the plastic deformation. In this study, instead of martensite, the surface microstructure was changed into nitrogen pearlite to increase the plastic deformation easily by isothermal heat treatment after high temperature gas nitriding (HTGN) the AISI 430 ferritic stainless steel. The isothermal treatment was carried out at $780^{\circ}C$ for 4, 6, and 10 hrs, respectively, after HTGN treatment at $1100^{\circ}C$ for 10 hrs. The surface layer of isothermal-treated steel appeared nitrogen pearlite composed with fine chromium nitride and ferrite. Hence, the interior region that was not affected by nitrogen permeation exhibited ferrite phase. When quenching the isothermal treated steel at 1100oC, martensitic phase formed at the surface layer. The hardness of surface layer of isothermal-treated steel and quenched steel measured the value of 150~240 Hv and 630 Hv, respectively.

• Journal of the Korean institute of surface engineering
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• v.41 no.2
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.22-25
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• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.149-154
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• 2011

Martensitic stainless steel STS 431 has been nitrided by active screen ion nitriding under the various temperature and time. The thickness of diffusion layer, case depth, hardness and composition phases were investigated using field emission scanning electron microscopy (FE-SEM), micro-Vickers hardness tester, X-ray diffraction (XRD) and glow discharge spectroscopy (GDS). It was observed that the thickness of diffusion layer depends strongly on the treatment temperature and time. A sample, which was nitrided at $450^{\circ}C$ for 8hours, was a maximum hardness of Hv0.01 1558 and nitride layer of $70{\mu}m$. As shown in XRD patterns, $\varepsilon(Fe_{2-3}N)$ and expanded martensite (${\alpha}_N$) phases which was saturated with nitrogen solid solution were in the nitrided layer treated at $450^{\circ}C$ for 2 hours. Composition phases of $\varepsilon$ $(Fe_{2-3}N)$ and ${\gamma}'$ ($Fe_4N$) were observed after active screen nitriding at $450^{\circ}C$ for 8 hours.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.324-329
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• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Journal of Korea Foundry Society
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• v.17 no.3
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• pp.276-285
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• 1997

The effect of wheel surface condition on solidification behavior of Al-Cu ribbon was investigated in order to establish extreme levels of heat extraction. The condition of wheel surface was changed either by heating the wheel surface up to $200^{\circ}C$ or by coating boron nitride(BN) onto the the rim of a wheel. Heating the wheel surface up to $200^{\circ}C$ improved the wetting behavior between the molten metal and the rotating wheel, leading to an increase in the ratio of columnar structure to the entire thickness of Al-4.3wt%Cu and Al-33.2wt%Cu ribbons. For Al-4.3wt%Cu ribbon, assuming one grain as a single heterogeneous nucleation event at the contact point, the nucleation density with the wheel surface heated to $200^{\circ}C$, was $4{\times}10^6/mm^2$, and in the cases of BN coating with thin and thick layers, $10^5/mm^2$ and $5{\times}10^4/mm^2$, respectively. The largest cooling capacity of the wheel corresponded to the heated wheel surface, and as the thickness of BN coating layer increased, the cooling capacity of the wheel gradually decreased.

• Transactions of the Korean hydrogen and new energy society
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• v.15 no.4
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• pp.317-323
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• 2004

We fabricated a MISFET using Pd/NiCr gate for the detecting of hydrogen gas in the air and investigated its electrical characteristics. To improve stability and high concenntration sensitivity and remove the blister generated by the penetration of hydrogen atoms Pd/NiCr catalyst gate metal are used as dual gate. To reduce the gate drift voltage caused by the inflow of hydrogen, the gate insulators of sensing and reference FFET were constructed with double insulation layers of silicon dioxide and silicon nitride. The hydrogen response of MISFET were amplified with the difference of gate voltages of both MISFET. To minimize the drift and the noise, we used a OP177 operational amplifier. The sensitivity of the Pd/NiCr gate MISFET was lower than that of Pd/Pt gate MISFET, but it showed good stability and ability to detect high concentration hydrogen up to 1000ppm.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.