• 한국광학회지
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• 제32권2호
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• pp.62-67
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• 2021

본 연구에서는 모드 잠금된 ps-펄스 광섬유 레이저와 연속 발진하는 좁은 선폭의 반도체 레이저를 이용하여 주기적 분극반전된 LiNbO3(periodically poled lithium niobate; PPLN) 결정에서 합주파수 생성 연구를 수행하였다. 모드 잠금된 펄스 레이저는 중심 파장이 1560.7 nm이고 스펙트럼의 폭은 약 1.1 nm이며, 연속 발진 반도체 레이저는 중심 파장이 1551 nm이고 스펙트럼의 폭은 약 6 MHz로 동작한다. 합주파수 생성을 효과적으로 수행하기 위해서 하나의 단일 모드 광섬유를 이용하여 PPLN 결정 내부에서 두 펌프 광원을 공간적으로 완전히 중첩하였다. 모드 잠금된 펄스 레이저와 좁은 선폭의 연속발진 반도체 레이저에 의해서 모드 잠금된 펄스 형태의 778 nm인 합주파수 생성을 스펙트럼과 시간적인 변화로 확인하였다. 본 연구 결과는 주파수 제어가 가능한 광주파수 빗(optical frequency comb)을 이용한 광주파수 측정 및 고분해 레이저 분광 연구 등 다양하게 응용될 수 있을 것으로 기대된다.

• 한국분말재료학회지
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• 제30권6호
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• pp.509-515
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• 2023

Lead-free perovskite ceramics, which have excellent energy storage capabilities, are attracting attention owing to their high power density and rapid charge-discharge speed. Given that the energy-storage properties of perovskite ceramic capacitors are significantly improved by doping with various elements, modifying their chemical compositions is a fundamental strategy. This study investigated the effect of Zn doping on the microstructure and energy storage performance of potassium sodium niobate (KNN)-based ceramics. Two types of powders and their corresponding ceramics with compositions of (1-x)(K,Na)NbO₃-xBi(Ni_2/3Ta_1/3)O₃ (KNN-BNT) and (1-x)(K,Na)NbO₃-xBi(Ni_1/3Zn_1/3Ta_1/3)O₃ (KNN-BNZT) were prepared via solid-state reactions. The results indicate that Zn doping retards grain growth, resulting in smaller grain sizes in Zn-doped KNN-BNZT than in KNN-BNT ceramics. Moreover, the Zn-doped KNN-BNZT ceramics exhibited superior energy storage density and efficiency across all x values. Notably, 0.9KNN-0.1BNZT ceramics demonstrate an energy storage density and efficiency of 0.24 J/cm³ and 96%, respectively. These ceramics also exhibited excellent temperature and frequency stability. This study provides valuable insights into the design of KNN-based ceramic capacitors with enhanced energy storage capabilities through doping strategies.

• Journal of the Optical Society of Korea
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• 제1권2호
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• pp.120-120
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• 1997

광섬유 Fabry-Perot 간섭계를 센서로 하는 TDM 다중화 광섬유 압력/온도 센서시스템을 개발하고, 이 시스템을 이용하여 수위와 온도 측정실험을 행하였다. 측정시스템의 측정속도는 측정데이타를 저장하지 않는 경우 최대 초당 4500회이며, 센서의 응답속도는 ~1 ms로 추정된다. 압력센서와 온도센서의 특성은 이론적 추정치와 비교하여 각각 +13.7%,-18%의 차이를 보였으며, 반복실험을 통하여 선형화한 후의 선형화 오차는 1%이내, 온도의 변화가 0.1$^{\circ}C$이내 일 때 수위측정의 오차는 $\pm$0.3cm이며, 수위측정에 대한 시스템 잡음은 측정하지 않았다. 온도센서의 시스템 잡음은 0.1$^{\circ}C$이내였으며, 이 시스템을 이용하여 수위 및 온도 변화량에 대한 고속 측정실험을 수행할 결과 예상된 결과를 얻을 수 있었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.149-155
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• 1997

We have successfully grown colorless and transparent Rb-doped potassium niobate (KRN) single crystals using the top seeded solution growth(TSSG) technique. In our crystal growth experiments, the Rb doping concentrations within the melt range from 2-15 mol% relative to that of Nb$_2$O5. Atomic absorption measurements indicate that the Rb content in the KRN solid solution is rather low; the Rb segregation coefficient is found to be on the order of 0.05. It is believed that this is due to the relatively much larger Rb+ ionic radius compared to that of K+, rendering it more difficult for Rb to replace K in the KNbO$_3$(KN) host lattice. Preliminary single-pass second harmonic generation (SHG) experimental results indicate that there exists marginal improvement in the phase-matching temperature tolerance of KRN compared to that of pure Kn single crystals.

• 한국세라믹학회지
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• 제53권3호
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• pp.312-316
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• 2016

The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

• 한국결정성장학회지
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• 제7권4호
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• pp.555-559
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• 1997

lead acetate, scandium acetate, niobium isopropoxide를 전구체로 사용한 솔-젤법으로 $Pb(Sc_{1/2}Nb_{1/2})O_3$ 분말을 제조하였다. 젤 분말에 대한 결정화 거동과 상변화가 연구되었다. 솔-젤법을 이용하여 $700^{\circ}C$에서 1시간 동안 열처리를 행하여 97 % 이상의 매우 순수한 $Pb(Sc_{1/2}Nb_{1/2})O_3$ 상을 얻을 수 있었으며 0.2 $\mu \textrm{m}$ 이하의 평균 입자 크기를 가진 매우 미세한 분말의 제조가 가능하다.

• 한국결정성장학회지
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• 제4권4호
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• pp.405-410
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• 1994

$\mu\textrm{m}$-PD법에 의해 융액 조성을 변화시키면서 KLN결정을 육성하였다. 육성된 결정은 DTA 측정 및 X.선 회절법에 의해 조성을 변화를 측정하였다. 이 결과로부터 $\mu\textrm{m}$-PD KLN 단결정은 육성축 방향에 따라 균일한 조성을 갖음을 알 수 있었으며, 이는 고액계면에서의 대류제의 효과에 기인된다고 사료된다.

• 한국세라믹학회지
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• 제35권3호
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• pp.245-250
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• 1998

Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+}\;doped\;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1051-1057
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• 2000

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.

• Journal of the Optical Society of Korea
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• 제18권6호
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• pp.739-745
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• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.