• 대한금속재료학회지
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• 제46권2호
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• 한국표면공학회지
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• 제32권3호
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• pp.331-335
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• 1999

Electroless plating nickel has superior mechanical property to electroplated nickel. Furthermore nickel can be coated on nonconducting substrate. In this research, electroless plating of nickel were conducted in different bath condition to find optimum conditions of electroless nickel plating for MEMS applications. The selectivity of activation method on several substrates was investigated. The effects of nickel concentration, reducing agent concentration and inhibitor on deposition rate were investigated. The effect of pH on deposition rate and content of phosphorous in deposited nickel was also investigated.

• 한국재료학회지
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• 제17권6호
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• pp.323-330
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• 2007

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.365.2-365.2
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• 2014

Nickel sulfide (NiS) has been utilized in optoelectronic applications, such as transformation-toughening agent for materials used in semiconductor applications, catalysts, and cathodic materials in rechargeable lithium batteries. Recently, high quality nickel sulfide thin films have been explored using ALD/CVD technique. Suitable precursors are needed to deposit thin films of inorganic materials. However, nickel sulfide precursors available for ALD/CVD process are very limited to nickel complexes with dithiocarbamate and alkanethiolate ligands. Therefore, it is essential to prepare novel nickel sulfide suitable for ALD/CVD precesses. Herein we report on the synthesis and characterization of new nickel sulfide complex with designed aminothiolate ligand. Furthermore thin films of NiS have been prepared on silicon oxide substrates by spin coating nickel precursor 10 wt% in THF. The novel complex has been characterized by means of 1H-NMR, elemental analysis, thermogravimetric analysis (TGA), X-ray Diffraction (XRD) and scanning electron microscope (SEM).

• 한국표면공학회지
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• 제28권5호
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• pp.276-288
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• 1995

A nickel mesh and an expanded nickel sheet were used as a current collector for supporting active materials of cathode in rechargeable batteries, while a porous nickel substrate was extensively studied because of its 3-dimensional structure which has high capabilities for active materials and current collection. Optimum coating conditions were studied by SEM and two step d. c. constant current electrolysis for the graphite coating and electro-plated nickel on an urethane substance which was highly porous and 3-dimensional structure. The density and the porosity of nickel support obtained by using two step current density and 80 ppi urethane substance were 0.38∼0.40 g /㎤ and 94∼96%, respectively. It was possible to fabricate a highly porous and good packable nickel substrate using two step current density and surfactants at sulfamic acid nickel plating bath.

• 한국재료학회지
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• 제16권10호
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• pp.656-662
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• 2006

We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.625-628
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• 1999

Recently. high-density printed circuit boards(PCB) become indispensable with the minaturization of components. Nickel is deposited on the copper patterns and followed by the gold deposition for improving connection reliability between the printed circuit boards and electronic components. Conventionally electrodeposition has been applied to metalization of copper patterns. However metalization by this method is not applicable for the isolated fine and concentrated patterns. Therefore, metalization technology of the fine patterns by electroless plating is required in place of electrodeposition. The application of electroless nickel plating for interconnection with solder strongly relies on the solderability and the interactions between nickel and solder. Factors such as phosphorus content of the deposit additive and bath temperature may influence solderability of the electroless nickel deposit. So solderability of electroless nickel/ gold deposits was investigated with substrates plated changing the condition of nickel solution.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.121-125
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• 1999

Vertically well aligned multiwall carbon nanotubes were grown on nickel coated different substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 650$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. The surface roughness of nickel layer increased as NH3 etching time increased. The diameters of the nanotubes decreased and the density of nanotubes increased as NH3 etching time increased. diameter of nanotube was 30 to 70 nm. Nickel cap was observed on the top of the grown nanotube and very thin carbon amorphous layer was fonde on the nickel cap.

• 비파괴검사학회지
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• 제19권5호
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• pp.340-346
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• 1999

액체/고체 경계면에 표면파가 발생할 때 나타나는 최소반사 및 후방복사 현상을 이용하여 brass와 aluminum 시편 그리고 copper/stainless steel, nickel/brass, nickel/aluminum 도금시편에 대한 표면 탄성파 속도의 주파수 의존성이 측정되었다. 측정된 속도의 분산관계는 일반화 램 표면파의 분산 특성과 잘 일치하였다. 시편들의 분산 특징에 따라 최소반사와 후방복사에 의해 결정된 속도 차이의 경향이 다르게 나타났다. 이러한 대응 관계는 두 현상의 생성 메커니즘과 군속도의 도입으로 설명되었다.

• 센서학회지
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• 제24권5호
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.