• Korean Journal of Materials Research
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• v.18 no.2
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• pp.84-91
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• 2008

The effects of the deposition and annealing temperature on the structural, electrical and optical properties of Ag doped ZnO (ZnO : Ag) thin films were investigated. All of the films were deposited with a 2wt% $Ag_2O-doped$ ZnO target using an e-beam evaporator. The substrate temperature varied from room temperature (RT) to $250^{\circ}C$. An undoped ZnO thin film was also fabricated at $150^{\circ}C$ as a reference. The as-grown films were annealed in temperatures ranging from 350 to $650^{\circ}C$ for 5 h in air. The Ag content in the film decreased as the deposition and the post-annealing temperature increased due to the evaporation of the Ag in the film. During the annealing process, grain growth occurred, as confirmed from XRD and SEM results. The as-grown film deposited at RT showed n-type conduction; however, the films deposited at higher temperatures showed p-type conduction. The films fabricated at $150^{\circ}C$ revealed the highest hole concentration of $3.98{\times}1019\;cm^{-3}$ and a resistivity of $0.347\;{\Omega}{\cdot}cm$. The RT PL spectra of the as-grown ZnO : Ag films exhibited very weak emission intensity compared to undoped ZnO; moreover, the emission intensities became stronger as the annealing temperature increased with two main emission bands of near band-edge UV and defect-related green luminescence exhibited. The film deposited at $150^{\circ}C$ and annealed at $350^{\circ}C$ exhibited the lowest value of $I_{vis}/I_{uv}$ of 0.05.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.605-611
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• 2012

ZnO nanostructures were grown on R-plane sapphire substrates with seed layers annealed at different temperatures ranging from 600 to $800^{\circ}C$. The properties of the ZnO nanostructures were investigated by scanning electron microscopy, high-resolution X-ray diffraction, UV-visible spectrophotometer, and photoluminescence. For the as-prepared seed layers, ZnO nanorods and ZnO nanosheets were observed. However, only ZnO nanorods were grown when the annealing temperature was above $700^{\circ}C$. The crystal qualities of the ZnO nanostructures were enhanced when the seed layers were annealed at $700^{\circ}C$. In addition, the full width at half maximum (FWHM) of near-band-edge emission (NBE) peak was decreased from 139 to 129 meV by increasing the annealing temperature to $700^{\circ}C$. However, the FWHM was slightly increased again by a further increase in the annealing temperature. Optical transmittance in the UV region was almost zero, while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanostructures was increased as the annealing temperature increased to $700^{\circ}C$. It is found that the optical properties as well as the structural properties of the rod-shaped ZnO nanostructures grown on R-plane sapphire substrates by hydrothermal method are improved when the seed layers are annealed at $700^{\circ}C$.

• Advances in materials Research
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• v.12 no.3
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.2
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• pp.35-41
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• 2012

In this study, wheat starch adhesive was investigated the shape and structure of starch, the difference in characteristics such as chemical composition according to the fermenting period of 2 years or less. The fermenting period of wheat starch adhesive is 1 month, 2months, 4 months,6 months, 1 year, 2years old. The wheat starch adhesives were investigated total sugar contents, protein contents, properties of gelatinization, pH, the bonding strength and also observed the surface of starch,. As a result, the longer the fermenting period, the increasing in total sugar contents and decreasing in protein contents. The particle shape and surface were similar regardless of the period. In addition, properties of gelatinization according to the fermenting period also could not see the difference. In pH of the adhesive, the longer the fermenting period, the near to neutral. The adhesive was high bonding strength in 4 months, but appeared a tendency to decrease from 6 months. The damage assessment through the UV degradation in regard to the papers applied the adhesive was accomplished. Color difference was no change except 1 month. The 4 months and 6 months' pH was each 5.0, 5.2. But it was near to neutral that the 12 months and 24 months' pH was each 5.7, 5.9.

• Journal of Environmental Science International
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• v.17 no.7
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• pp.767-774
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• 2008

This study was carried out to evaluate the characteristics of atmospheric concentrations of volatile organic compounds(VOCs) and aldehydes for near a large shipyard. Most of the painting work in marine coating is performed indoor and outdoor. Most of the VOCs are emitted to the atmosphere as the paint is applied and cures. The massive scale of a ship makes it difficult to capture the emissions from outdoor painting. The VOCs are an important health and contributors to photochemical smog. The VOCs and aldehydes samples were collected using adsorbent tube and 2,4-DNPH cartridge, and were determined by an automatic thermal desorption coupled with GC/MS and HPLC-UV analysis, respectively. A total of 16 aromatic VOCs and 12 aldehydes of environmental concern were determined. At indoor coating facilities, the most abundant compound among 16 target VOCs appeared to be m,p-xylene, being followed by o-xylene. But most of the aldehydes were extremely lower concentrations. The atmospheric concentration of VOCs, m,p-xylene concentrations were the highest and the mean value were outdoor workshop 11.323 ppb, residental area 5.134 ppb, and green area 2.137 ppb, respectively. However, the most aldehydes were extremely lower concentrations such as formaldehyde, acetaldehyde and non-detection such as iso-valeraldehyde, n-valeraldehyde and o-tolualdehyde.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.253.2-253.2
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• 2014

Micro hollow cathode discharges (MHCDs) are high-pressure, non-equilibrium discharges. Those MHCDs are useful to produce an excimer radiation. A major advantage of excimer sources is their high internal efficiency which may reach values up to 40% when operated under optimum conditions. To produce strong excimer radiation, the optimisation of the discharge conditions however needs a detailed knowledge of the properties of the discharge plasma itself. The electron density and temperature influence the excitation as well as plasma chemistry reactions and the gas temperature plays a major role as a significant energy loss process limiting efficiency of excimer radiation. Most of the recent spectroscopic investigations are focusing on the ultraviolet or vacuum ultraviolet range for direct detection of the excimer. In our experiments we have concentrated on investigating the micro hollow cathodes from the near UV to the near infrared (300~850 nm) to measure the basic plasma parameters using standard plasma diagnostic techniques such as stark broadening for electron density and the relative line intensity method for electron temperature. Finally, the neutral gas temperature was measured by means of the vibrational rotational structures of the second positive system of nitrogen.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3335-3339
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• 2013

Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons ($D^{\circ}X$), and the first LO phonon replicas of $D^{\circ}X$, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Journal of The Korean Astronomical Society
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• v.31 no.1
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• pp.1-17
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• 1998

To understand the basic physics underlying large spatial fluctuations of intensity and Doppler shift, we have investigated the dynamical charctersitics of the transition region of the quiet sun by analyzing a raster scan of high resolution UV spectral band containing H Lyman lines and a S VI line. The spectra were taken from a quiet area of $100'\times100'$ located near the disk center by SUMER on board SOHO. The spectral band ranges from 906 A to 950 A with spatial and spectral resolution of 1v and $0.044 {\AA}$, respectively. The parameters of individual spectral lines were determined from a single Gaussian fit to each spectral line. Then, spatial correlation analyses have been made among the line parameters. Important findings emerged from the present analysis are as follows. (1) The integrated intensity maps of the observed area of H I 931 line $(1\times10^4 K)$ and S VI 933 line $(2\times10^5 K)$ look very smilar to each other with the same characterstic size of 5". An important difference, however, is that the intensity ratio of brighter network regions to darker cell regions is much larger in S VI 933 line than that in H I 931 line. (2) Dynamical features represented by Doppler shifts and line widths are smaller than those features seen in intensity maps. The features are found to be changing rapidly with time within a time scale shorter than the integration time, 110 seconds, while the intensity structure remains nearly unchanged during the same time interval. (3) The line intensity of S VI is quite strongly correlated with that of H I lines, but the Doppler shift correlation between the two lines is not as strong as the intensity correlation. The correlation length of the intensity structure is found to be about 5.7' (4100 km), which is at least 3 times larger than that of the velocity structure. These findings support the notion that the basic unit of the transition region of the quiet sun is a loop-like structure with a size of a few $10^3 km$, within which a number of unresolved smaller velocity structures are present.