• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.96-96
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• 2016

나노섬유(nanofiber), 나노선(nanowire), 그리고 나노튜브(nanotube)와 같은 1차원 구조의(one-dimensional structure) 나노재료는 벌크(bulk) 및 박막(film) 재료와는 다르게 물리적, 화학적으로 특이한 성질을 가지고 있으며, 이러한 성질은 나노재료의 구조, 형상, 크기 등에 큰 영향을 받는다. 첫 째, 전기방사(electrospinning) 공정을 이용한 나노섬유의 합성; 용액의 특성, 전기장 세기, 방사시간 등의 변수를 조절하게 되면 방출되는 재료의 형상을 입자 혹은 섬유상의 형태로 얻을 수 있으며, 전기방사를 통해 합성된 나노재료의 소결 온도 및 시간을 달리함으로써 나노입자의 크기를 조절할 수 있다. 또한, 템플레이트 합성법(template synthesis) 및 이중노즐(coaxial nozzle)을 이용해 속이 빈 형태인 중공(hollow) 구조의 나노섬유를 얻을 수 있으며, 전기방사에 사용되는 전구물질에 원하는 금속 및 산화물을 첨가함으로써 복합체(composite) 나노섬유를 얻을 수 있다. 둘 째, VLS(Vapor-Liquid-Solid) 공정을 이용한 나노선의 성장; 온도, 압력, 전구물질의 양, 그리고 시간 등의 변수를 조절하게 되면 원하는 직경 및 길이를 갖는 나노선을 성장시킬 수 있다. 그리고 ALD(Atomic Layer Deposition)를 이용해 나노선에 추가적인 층을 형성함으로써 코어-셀 구조를 형성할 수 있으며, 감마선, UV와 같은 공정을 이용해 귀금속 촉매를 나노선에 기능화 시킬 수도 있다. 코어-셀 구조를 갖는 나노선/나노섬유는 코어 혹은 셀 층의 전자나 홀의 이동을 유발하여 전자공핍층(electron depletion layer) 또는 정공축적층(hole accumulation layer)을 확대 및 축소시켜 센서의 초기저항을 증가시키거나 감소시키는 역할로써 이용되고 있으며, 특히, 셀 층의 두께가 셀 층 재료의 Debye length와 유사한 크기를 갖게 되면, 셀 층은 완전공핍층(fully depleted layer)을 형성해 최대의 감도를 나타낼 수 있다. 본 연구에서는 다양한 제조 공정을 통해 제작될 수 있는 1차원 나노-구조물을 가스센서에 적용하는 사례들을 소개하고, 이러한 가스센서의 감응성능을 향상시키기 위한 방법의 한 가지로 원자층증착법으로 나노선/나노섬유의 표면에 셀층을 형성하여 감응성 향상 메커니즘 및 관련 주요 변수들을 조사하고자 한다.

• Journal of the Korean Electrochemical Society
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• v.6 no.3
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• pp.208-211
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• 2003

We have investigated the dimensional and microstructural dependence of magnetic properties of CoP nano-wire arrays fabricated by electrodeposition on AAO(anodic aluminum oxide) templates with different-size nanopores. Our results indicate that the magnetic properties of nanowire arrays can be varied with their dimensions and microstructures. As for the CoP nanowire arrays with the diameter of 20nm, it was found to have the coercivity more than 2.6kOe due to the shape anisotropy and squareness(Mr/Ms) of $\~0.8$. The CoP nanowire arrays with the diameter of 200m, however, showed very different magnetic properties depending on the current densities. Nanowires fabricated at $5mA/cm^2$ had stronger tendency to have the preferred crystallographic orientation of (002) parallel to the nanowire than those fabricated at $35mA/cm^2$ These microstructural differences are the reason why CoP nanowire arrays prepared at different current densities exhibited different magnetic properties.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.1-6
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• 2008

Block copolymers spontaneously assemble into various nanoscale structures such as spheres, cylinders, and lamellar structures according to the relative volumn ratio of each macromolecular block and their overall molecular weights. The self-assembled structures of block copolymer have been extensively investigated for the applications such as nanocomposites, photonic crystals, nanowires, magnetic-storage media, flash memory devices. However, the naturally formed nanostructures of block copolymers contain a high density of defects such that the practical applications for nanoscale devices have been limited. For the practical application of block copolymer nanostructures, a robust process to direct the assembly of block copolymers in thin film geometry is required to be established. To exploit self-assembly of block copolymer for the nanotechnology, it is indispensible to fabricate defect-free self-assembled nanostructure over an arbitrarily large area.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.22.2-22.2
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• 2009

Currently, metal silicides become increasingly more essential part as a contact material in complimentary metal-oxide-semiconductor (CMOS). Among various silicides, NiSi has several advantages such as low resistivity against narrow line width and low Si consumption. Generally, metal silicides are formed through physical vapor deposition (PVD) of metal film, followed by annealing. Nanoscale devices require formation of contact in the inside of deep contact holes, especially for memory device. However, PVD may suffer from poor conformality in deep contact holes. Therefore, Atomic layer deposition (ALD) can be a promising method since it can produce thin films with excellent conformality and atomic scale thickness controllability through the self-saturated surface reaction. In this study, Ni thin films were deposited by thermal ALD using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 gas as a reactant. The Ni ALD produced pure metallic Ni films with low resistivity of 25 $\mu{\Omega}cm$. In addition, it showed the excellent conformality in nanoscale contact holes as well as on Si nanowires. Meanwhile, the Ni ALD was applied to area-selective ALD using octadecyltrichlorosilane (OTS) self-assembled monolayer as a blocking layer. Due to the differences of the nucleation on OTS modified surfaces toward ALD reaction, ALD Ni films were selectively deposited on un-coated OTS region, producing 3 ${\mu}m$-width Ni line patterns without expensive patterning process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.11-11
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• 2007

1차원 구조체인 반도체 나노선은 앙자제한효과 (quantum confinement effect) 등을 이용하여 고밀도/고효율의 소자 개발이 기대되고 있다. GaN는 상온에서 3.4 eV의 밴드갭 에너지를 갖는 III-V 족 반도체 재료로써 박막의 경우 광전자 소자로 폭넓게 응용되고 있다. 최근 GaN 나노선의 합성에 성공하면서 발광소자, 고효율의 태양전지, HEMT 등으로의 응용을 위한 많은 연구가 활발히 이루어지고 있다. 하지만, 아직까지 GaN 나노선의 전기적 특성을 제어하는 기술은 확립되지 않고 있다. 본 연구에서는 Vapor solid (VS)법을 이용하여 GaN 나노선을 합성하였으며, GaN 분말과 함께 $Mg_2N_3$ 분말을 첨가하여 (Ga,Mg)N 나노선을 성공적으로 합성하였다. 합성시에 GaN와 Mg 소스간의 거리 변화를 통해 Mg 도핑농도를 제어하고자 하였다. 이 같은 방법으로 합 된 (Ga,Mg)N 나노선의 Mg 도핑농도에 따른 결정학적 특성을 알아보고, (Ga,Mg)N 나노선을 이용하여 소자를 제작한 후 그 전기적 특성을 살펴보고자 한다. X-ray diffraction (XRD)과 high-resolution transmission electron microscopy (HRTEM), EDX를 이용하여 합성된 나노선의 결정학적 특성과 Mg의 도핑 농도를 확인하였다. Photo lithography와 e-beam lithography법을 이용하여 (Ga,Mg)N 나노선 field-effect transistor (FET)를 제작하고, channel current-drain voltage ($I_{ds}-V_{ds}$) 와 channel current-gate voltage ($I_{ds}-V_g$) 측정을 통해 (Ga,Mg)N 나노선이 도핑 농도에 따라 n형에서 p형으로 전기적 특성이 변화함을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.259-265
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• 2009

We fabricated the field effect transistor using single crystalline ZnO nanowires synthesized by a conventional thermal evaporation method and investigated their basic properties under the various conditions such as ultraviolet irradiation, reducing gas and electrolyte. The typical carrier concentration and mobility of the single crystalline ZnO nanowire with a diameter of 100 nm and length of 5 um were $1.30{\times}10^{18}cm^{-3}$ and $15.6cm^2V^{-1}s^{-1}$, respectively. The current of ZnO nanowire under ultraviolet irradiation significantly increased about 400 times higher as compared to in the darkness. In addition, the ZnO nanowire showed typical sensing characteristics for $H_2$ and CO due to well-known surface reactions and typical current-voltage characteristics under the 0.1 M NaCl electrolyte.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.37-41
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• 2019

Sheet resistance reduction in the Ag nanowire (NW) coated films is accomplished with slight improvement of optical properties for the application of transparent conducting electrodes by using $O_2$ plasma treatment. The sheet resistance was optimized after 30 seconds $O_2$ plasma treatment, showing the 27 % of maximum decrease of sheet resistance. It is found that the $O_2$ plasma treatment get rid of the residual organic materials at the junction of Ag NWs. However, the Ag NWs may be also snapped by the excessive $O_2$ plasma treatment can showing the collapses of Ag NWs networks. Furthermore, the optical properties such as optical transmittance and haze were monotonically improved with the $O_2$ plasma treatment time until 90 seconds.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.1-5
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• 2018

Elastic resistive pressure sensor is fabricated by a direct spray coating of silver nanowires (AgNWs) on uncured polydimethylsiloxane (PDMS) and an additional coating of a conductive polymer, poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). To improve the sensitive and stability, we have fabricated sandwich-structured AgNW/polymer sensor where two AgNW/polymer-coated PDMS films are laminated with the conducting surfaces contacted by pressure lamination. It shows a resistance decrease upon loading due to the formation of dense network of AgNWs. It is demonstrated that the sandwich-structured AgNW/polymer sensor exhibits very high sensitivity ($2.59kPa^{-1}$) and gauge factor (37.8) in the low pressure regime. It can also detect a subtle placement and removal of a weight as low as 3.4 mg, the corresponding pressure of which is about 5.4 Pa. It is shown that the protrusion of AgNWs from PDMS is suppressed substantially by the over-coated PEDOT:PSS layer, thereby reducing hysteresis and rendering the sensor more stable.