• Title/Summary/Keyword: nanowall

Search Result 12, Processing Time 0.032 seconds

Fabrication of 2-Dimensional ZnO Nanowall Structure (2차원 ZnO 나노벽 구조 제조)

  • Kim, Young-Jung;Cao, Guozhong;Kim, Yeong-Cheol;Ahn, Seung-Joon;Min, Joon-Won
    • Journal of the Korean Ceramic Society
    • /
    • v.42 no.7 s.278
    • /
    • pp.521-524
    • /
    • 2005
  • ZnO 2-D nanowall structure with around 100 nm thickness, which is composed of tens of nm scale ZnO single crystals, was fabricated through the low temperature chemical solution growth method. Electro Chemical Deposition (ECD) technique was applied to attach the ZnO seed crystals on ITO coated glass substrate. The ZnO nanowall structure was grown in the 0.015 mol$\%$ of aqueous solution of zinc nitrate and hexamethenamine at 60$^{\circ}C$ for 20 - 40 h. The nanowall structure depends on the ECD condition or the applied voltage and duration time. The nanowall shows a photoluminescence around 550 - 700 nm spectrum range.

Study on the Synthesis of Graphene Nanowall by Controlling Electric Field in a Radio Frequency Plasma CVD Process (RF 플라즈마 CVD 프로세스의 전계제어에 의한 그래핀 나노월 성장 연구)

  • Han, SangBo
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.28 no.9
    • /
    • pp.45-51
    • /
    • 2014
  • This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

Morphology Control of ZnO Nanowalls and Nanowires by Manipulation of Growth Parameters (성장변수 조작을 통한 ZnO nanowall과 nanowire의 형상제어)

  • Choi, Min-Yeol;Lee, Sam-Dong;Kim, Sang-Woo;Yoon, Dae-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.11a
    • /
    • pp.422-422
    • /
    • 2008
  • 본 연구에서, 금 촉매가 4nm 증착된 GaN/$Al_2O_3$ 기판위에 nanowire와 nanowall과 같은 ZnO 나노구조물을 화학기상증착법을 이용하여 합성시켰다. 합성된 ZnO 나노구조물의 형상은 성장시간과 성장온도 조작을 통하여 제어하였다. 합성된 ZnO 나노구조물의 협상을 관찰하기 위해, 전계방출 주사전자현미경을 측정하였다. ZnO 나노구조물은 성장 온도가 $1000^{\circ}C$에서 $1100^{\circ}C$로 증가함에 따라 불균일한 막, nanowire, nanowall 형태로 형상이 점차적으로 변하였으며, 또한 각각의 성장온도에서 성장 시간이 증가함에 따라 나노와이어의 성장이 두드러지게 나타났다. 또한 합성된 ZnO 나노구조물의 결정성과 광학특성을 X-ray diffraction pattern과 상온 photoluminescence spectrum을 이용하여 각각 분석하였다. 이룰 통하여 합성된 ZnO 나노구조물은 wurzite 결정구조를 가지며, 380nm 영역에서 near band edge emission 에 의한 발광 peak와 500~550nm 영역에서 deep level emission에 의한 발광 peak이 나타나는 것을 확인하였다.

  • PDF

Growth Properties of Carbon nanowall according to the Reaction Gas Ratio (반응가스 비율에 따른 탄소나노월의 성장특성)

  • Kim, Sung-Yun;Kang, Hyunil;Choi, Won Seok;Joung, Yeun-Ho;Lim, Yonnsik;Yoo, Youngsik;Hwang, Hyun Suk;Song, Woo-Chang
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.63 no.4
    • /
    • pp.351-355
    • /
    • 2014
  • Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increased the reaction area of graphite electrodes used carbon nanotube (CNT) and porous carbon. CNT is limited to device utilization in order to used a metal catalyst by lack of surface area to improve. In contrast carbon nanowall (CNW) is chemically very stable. So this paper, microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow carbon nanowall (CNW) on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. To find the growth properties of CNW according to the reaction gas ratio, we have changed the methane to hydrogen gas ratios (4:1, 2:1, 1:2, and 1:4). The vertical and surficial conditions of the grown CNW according to the gas ratios were characterized by a field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy measurements showed structure variations.

Growth and Resistance Properties of Carbon Nanowall According to the Variation of Reaction Gas (반응가스의 변화에 따른 탄소나노월의 성장 및 저항 특성)

  • Kim, Sung Yun;Lee, Sangjoon;Choi, Won Seok;Joung, Yeun-Ho;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.4
    • /
    • pp.217-220
    • /
    • 2014
  • Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.

Growth Properties of Carbon Nanowall According to the Substrate Angle (기판 각도에 따른 탄소나노월의 성장 특성)

  • Kim, Sung Yun;Joung, Yeun-Ho;Han, Jae Chan;Choi, Won Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.26 no.9
    • /
    • pp.686-689
    • /
    • 2013
  • The carbon nanowall (CNW) is a carbon-based nanomaterials and it was constructed with vertical structure graphenes and it has the highest surface density among carbon-based nanostructures. In this study, we have checked the growth properties of CNW according to the substrate angle. Microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow CNW on Si substrate with methane ($CH_4$) and hydrogen ($H_2$) gases. And, we have changed the substrate angle from $0^{\circ}$ to $90^{\circ}$ in steps of $30^{\circ}$. The planar and vertical conditions of the grown CNWs according to the substrate angle were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). In case of the growth angle increases, our experimental results showed that the length of the CNW was shortened and the content of carbon component was decreased.

Synthesis of Carbon Nanowalls by Microwave PECVD for Battery Electrode

  • Kim, Sung Yun;Shin, Seung Kwon;Kim, Hyungchul;Jung, Yeun-Ho;Kang, Hyunil;Choi, Won Seok;Kweon, Gi Back
    • Transactions on Electrical and Electronic Materials
    • /
    • v.16 no.4
    • /
    • pp.198-200
    • /
    • 2015
  • The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H2) and methane (CH4) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.

CNW 하부전극을 사용하여 제조된 염료감응형 태양전지의 특성분석

  • Jeong, Yong-Ho;Kim, Seong-Yun;Lee, Sang-Jun;Choe, Won-Seok;Im, Dong-Geon;Seo, Yeong-Ho;Choe, Eun-Chang;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.453.2-453.2
    • /
    • 2014
  • 그래핀을 수직으로 성장한 형태인 탄소나노월(Carbon nanowall; CNW)은 탄소를 바탕으로 하는 다른 나노물질에 비해 표면적이 상당히 넓은 물질로 전극에 활용하여 소자 성능향상을 기대 할 수 있다. 또한 탄소를 기반으로 하는 나노 구조물중에서 가장 높은 표면밀도를 가진다. CNW를 차세대 염료감응형 태양전지(Dye sensitised solar cells; DSSC)의 상대전극으로 사용한다면 기존대비 광변환 효율을 향상시킬 수 있어 새로운 상대전극으로 활용 가능하다. 또한 CNW는 다른 촉매 없이 직접성장이 가능함으로 불순물 제거공정이 필요하지 않고, 공정시간이 짧아 대량생산에 용의하다. 본 연구에서는 마이크로웨이브 PECVD 장비를 사용하고 메탄(CH4)을 반응가스로 사용하여 CNW 하부전극을 제조하였다. CNW 하부전극의 광 변환효율을 관찰하기위해서 합성시간을 변화를 주었다. 제조된 DSSC의 광 변환 효율을 측정하기 위해 Solar simulator 장비를 사용하여 제작된 cells의 효율을 측정하였다.

  • PDF

Growth of ZnO Nanostructures on Various Substrates by Simple Aqueous Solution Method (습식화학방법에 의해 다양한 기판위에 ZnO 나노구조물의 성장)

  • Lee, Sam-Dong;Jin, Mi-Jin;Shin, Kyung-Sik;Jeong, Soon-Wook;Kim, Sang-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.21 no.7
    • /
    • pp.599-602
    • /
    • 2008
  • Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

Fabrication of Nickel Nano and Microstructures by Redeposition Phenomena in Ion Etching Process (이온식각공정의 재증착 현상을 이용한 니켈 마이크로 나노 구조물 제작)

  • Jung, Phill-Gu;Hwang, Sung-Jin;Lee, Sang-Min;Ko, Jong-Soo
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.31 no.1 s.256
    • /
    • pp.50-54
    • /
    • 2007
  • Nickel nano and microstructures are fabricated with simple process. The fabrication process consists of nickel deposition, lithography, nickel ion etching and plasma ashing. Well-aligned nickel nanowalls and nickel self-encapsulated microchannels were fabricated. We found that the ion etching condition as a key fabrication process of nickel nanowalls and self-encapsulated microchannels, i.e., 40 sccm Ar flow, 550 W RF power, 15 mTorr working pressure, and $20^{\circ}C$ water cooled platen without using He backside cooling unit and with using it, respectively. We present the experimental results and discuss the formational conditions and the effect of nickel redeposition on the fabrication of nickel nano and microstructures.