• 예술인문사회 융합 멀티미디어 논문지
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• 제8권1호
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• pp.887-894
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• 2018

최근 그래핀을 이용한 나노전자소자에 대한 많은 연구들이 다양한 분야에서 활발하게 이루어지고 있다. 본 연구에서는 분자동력학 시뮬레이션 방법을 사용하여 그래핀 나노리본 트렌치 구조를 이용한 풀러렌 분자 셔틀 소자로의 활용 가능성에 대하여 연구하였다. 그래핀 나노리본 트렌치 구조는 그 나노미터 규모의 분자 저장이 가능한 공간을 만들 수 있어, 이 공간을 활용하여 나노전기전자소자를 제작할 수 있는 가능성을 열어준다. 그래핀 나노리본 트렌치로 흡수된 풀러렌 분자는 외부 작용력의 방향에 따라서 그 위치를 그래핀 나노리본 트렌치 내부에서 조정할 수 있게 되기 때문에, 이를 이용하여 그래핀 나노리본 트랜체 내부에서 플러렌의 위치 조정으로 디지털 정보를 저장할 수 있다. 풀러렌 분자가 그래핀 나노리본 트렌치 내부에서 고랑을 따라서 이동과정에서 다양한 운동에너지 역학이 작용되는 것을 살펴보았다. 본 연구에서는 그래핀 나노리본 트렌치에 흡수된 풀러렌 분자는 나노전지전자소자의 오실레이터, 정보저장소자, 센서 등 다양한 첨단 분야에서 활용가능하다는 것을 연구하였다.

• Applied Science and Convergence Technology
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• 제27권2호
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• pp.35-37
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• 2018

The redox reaction on graphene nanoribbon (GNR) field effect transistors(FET) has been studied. In detail, upon employing an electrolyte gating, we verified electron transport performance modulation of GNR FET by monitoring conductance variation under oxidation and reduction processes. The conductance enhancement of GNR via removal of PMMA residue on graphene surface during redox cycles was also observed.

• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.13-18
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• 2019

Superconducting junctions of topological insulator (TI) are expected to host Majorana bound state, which is essential for developing topological quantum information devices. In this study, we fabricated Josephson junctions (JJs) made of Sb-doped Bi2Se3 TI nanoribbon and PbIn superconducting electrodes. In the normal state, the axial magnetoresistance data exhibit periodic oscillations, so-called Aharonov-Bohm oscillations, due to a metallic surface state of TI nanoribbon. At low temperature of 1.5 K, the TI JJ reveals the superconducting proximity effects, such as the critical current and multiple Andreev reflections. Under the application of microwave, integer Shapiro steps are observed with satisfying the ac Josephson relation. Our observations indicate that highly-transparent superconducting contacts are formed at the interface between TI nanoribbon and conventional superconductor, which would be useful to explore Majorana bound state in TI.

• 한국재료학회지
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• 제26권11호
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.190-193
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• 2010

This report covers an effective fabrication method of graphene nanoribbon for top-gated field effect transistors (FETs) utilizing electron beam lithography with a bi-layer resists (XR-1541/poly methtyl methacrylate) process. To improve the variation of the gating properties of FETs, the residues of an e beam resist on the graphene channel are successfully taken off through the combination of reactive ion etching and a lift-off process for the XR-1541 bi-layer. In order to identify the presence of graphene structures, atomic force microscopy measurement and Raman spectrum analysis are performed. We believe that the lift-off process with bi-layer resists could be a good solution to increase gate dielectric properties toward the high quality of graphene FETs.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.253-256
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• 2014

Functionalization of zigzag graphene nanoribbon (ZGNR) segment containing 120 C atoms with pyridine (3NV-ZGNR) defects was investigated on the basis of density-functional theory (DFT) calculations, results show that edge-modified ZGNRs by Sc can adsorb multiple hydrogen molecules in a quasi-molecular fashion, thereby can be a potential candidate for hydrogen storage. The stability of Sc functionalization is dictated by a strong binding energy, suggesting a reduction of clustering of metal atoms over the metal-decorated ZGNR.

• ETRI Journal
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• 제45권5호
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• pp.910-921
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• 2023

In this study, we designed a 6T-SRAM cell using 16-nm CMOS process and analyzed the performance in terms of read-speed latency. The temperaturedependent Cu and multilayered graphene nanoribbon (MLGNR)-based nanointerconnect materials is used throughout the circuit (primarily bit/bit-bars [red lines] and word lines [write lines]). Here, the read speed analysis is performed with four different chip operating temperatures (150K, 250K, 350K, and 450K) using both Cu and graphene nanoribbon (GNR) nano-interconnects with different interconnect lengths (from 10 ㎛ to 100 ㎛), for reading-0 and reading-1 operations. To execute the reading operation, the CMOS technology, that is, the16-nm PTM-HPC model, and the16-nm interconnect technology, that is, ITRS-13, are used in this application. The complete design is simulated using TSPICE simulation tools (by Mentor Graphics). The read speed latency increases rapidly as interconnect length increases for both Cu and GNR interconnects. However, the Cu interconnect has three to six times more latency than the GNR. In addition, we observe that the reading speed latency for the GNR interconnect is ~10.29 ns for wide temperature variations (150K to 450K), whereas the reading speed latency for the Cu interconnect varies between ~32 ns and 65 ns for the same temperature ranges. The above analysis is useful for the design of next generation, high-speed memories using different nano-interconnect materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.145.2-145.2
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• 2013

The band-gap opening in graphene is a key factor in developing graphene-based field effect transistors. Although graphene is a gapless semimetal, a band-gap opens when graphene is formed into a graphene nanoribbon (GNR). Moreover, the band-gap energy can be manipulated by the width of the GNR. In this study, we propose a site-specific synthesis of a width-tailored GNR directly onto an insulating substrate. Predeposition of a diamond-like carbon nanotemplate onto a SiO2/Si wafer via focused ion beam-assisted chemical vapor deposition is first utilized for growth of the GNR. These results may present a feasible route for growing a width-tailored GNR onto a specific region of an insulating substrate.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 자성 및 자성재료 국제학술대회
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• pp.17-17
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• 2015

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.10.2-10.2
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• 2008