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http://dx.doi.org/10.5757/ASCT.2018.27.2.35

Redox Reaction Investigation of Graphene Nanoribbon

Yu, Young-Jun (Department of Physics, Chungnam National University)

Publication Information

Applied Science and Convergence Technology / v.27, no.2, 2018 , pp. 35-37 More about this Journal

Abstract

The redox reaction on graphene nanoribbon (GNR) field effect transistors(FET) has been studied. In detail, upon employing an electrolyte gating, we verified electron transport performance modulation of GNR FET by monitoring conductance variation under oxidation and reduction processes. The conductance enhancement of GNR via removal of PMMA residue on graphene surface during redox cycles was also observed.

Keywords

Graphene; Graphene nanoribbon; Redox; Oxidation; Reduction; Electrolyte;

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Reference

1	E. R. Goldsmith, J. G. Coroneus, V. R. Khalap, A. A. Kane, G. A. Weiss, and P. G. Collins, Science 315, 77-81 (2007). DOI
2	S. Sorgenfrei, C. Chiu, R. L. Gonzalez, Y. -J. Yu, P. Kim, C. Nuckolls, and K. L. Shepard, Nature Nanotechnol. 6, 126-132 (2011). DOI
3	X. Wang, X. Li, L. Zhang, Y. Yoon, P. K. Weber, H. Wang, J. Guo, and H. Dai, Science 324, 768-771 (2009). DOI
4	P. Ramesh, M. E. Itkis, E. Bekyarova, F. Wang, S. Niyogi, X. Chi, C. Berger, W. der Heer, and R. C. Haddon, J. Am. Chem. Soc. 132, 14429-14436 (2010). DOI
5	G. P. Kotchey, B. L. Allen, H. Vedala, N. Yanamala, A. A. Kapralov, Y. Y. Tyurina, J. Klein-Seetharaman, and V. E. Kagan, A. Star, ACS Nano 5, 2098-2108 (2011). DOI
6	I. Jung, D. A. Dikin, R. D. Piner, and R. S. Ruoff, Nano lett. 8, 4283-4287 (2008). DOI
7	L. Liu, S. Ryu, M. R. Tomasik, E. Stolyarova, N. Jung, M. S. Hybertsen, M. L. Steigerwald, L. E. Brus, and G. W. Flynn, Nano lett. 8, 1965-1970 (2008). DOI
8	A. B. Kalser, C. Gomez-Navarro, R. S. Sundaram, M. Burghard, and K. Kern, Nano lett. 9, 1787-1792 (2009). DOI
9	J. T. Robinson, F. K. Perkins, E. S. Snow, Z. Wei, and P. E. Sheehan, Nano lett. 8, 3137-3140 (2008). DOI
10	L. Weng, L. Zhang, Y. P. Chen, and L. P. Rokhinson, Appl. Phys. Lett. 93, 093107 (2008). DOI
11	S. Masubuchi, M. Ono, K. Yoshida, K. Hirakawa, and T. Machida, Appl. Phys. Lett. 94, 082107 (2009). DOI
12	Z. Wei, D. Wang, S. Kim, S.-Y. Kim, Y. Hu, M. K. Yakes, A. R. Laracuente, Z. Dai, S. R. Marder, C. Berger, W. P. King, W. A. der Heer, P. E. Sheehan, and E. Riedo, Science 328, 328, 1373-1376 (2010). DOI
13	S. Neubeck, L. A. Ponomarnko, F. Freitag, A. J. M. Giesbers, U. Zeitler, S. V. Morozov, P. Blake, A. K. Geim, and K. S. Novoselov, Small 6, 1469-1473 (2011).
14	I. -S. Byun, D. Yoon, J. S. Choi, I. Hwang, D. H. Lee, M. J. Lee, T. Kawai, Y. -W. Son, Q. Jia, H. Cheong, and B. H. Park, ACS Nano 5, 6417-6424 (2011). DOI
15	Y. Shao, G. Yin, J. Zhang, and Y. Gao, Electrochem. Acta 51, 5853-5857 (2006). DOI