• Particle and aerosol research
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• v.18 no.4
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• pp.129-136
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• 2022

The line width of circuits in semiconductor devices continues to decrease down to a few nanometers. Since nanoparticles attached to the patterned wafer surface may cause malfunction of the devices, it is crucial to remove the contaminant nanoparticles. Physical cleaning that utilizes momentum of liquid for detaching solid nanoparticles has recently been tested in place of the conventional chemical method. Dropwise impaction has been employed to increase the removal efficiency with expectation of more efficient momentum exchange. To date, most of relevant studies have been focused on drop spreading behavior on a horizontal surface in terms of maximum spreading diameters and average spreading velocity of drop. More important is the local liquid velocity at the position of nanoparticle, very near the surface, rather than the vertical average value. In addition, there are very scarce existing studies dealing with microdroplet impaction that may be desirable for minimizing pattern demage of the wafer. In this study, we investigated the local velocity distribution in spreading liquid film under various impaction conditions through the CFD simulation. Combining the numerical results with the particle removal model, we estimated an effective cleaning diameter (ECD), which is a measure of the particle removal capacity of a single drop, and presented the predicted ECD data as a function of droplet's velocity and diameter particularly when the droplets are microns in diameter.

• Applied Microscopy
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• v.50
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• pp.2.1-2.7
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• 2020

Electron energy loss spectroscopy (EELS) is an analytical technique that can provide the structural, physical and chemical information of materials. The EELS spectra can be obtained by combining with TEM at sub-nanometer spatial resolution. However, EELS spectral information can't be obtained easily because in order to interpret EELS spectra, we need to refer to and/or compare many reference data with each other. And in addition to that, we should consider the different experimental variables used to produce each data. Therefore, reliable and easily interpretable EELS standard reference data are needed. Our Electron Energy Loss Data Center (EELDC) has been designated as National Standard Electron Energy Loss Data Center No. 34 to develop EELS standard reference (SR) data and to play a role in dissemination and diffusion of the SR data to users. EELDC has developed and collected EEL SR data for the materials required by major industries and has a total of 82 EEL SR data. Also, we have created an online platform that provides a one-stop-place to help users interpret quickly EELS spectra and get various spectral information. In this paper, we introduce EEL SR data, the homepage of EELDC and how to use them.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.533-537
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• 2003

Compared to sintered polycrystalline diamond (PCD), the deposited thin film diamond has a great advantage on the fabrication of cutting tools with complex geometries such as drills. Because of high performance in high speed machining non-ferrous difficult-to-cut materials in the field of automobiles industry, aeronautics and astronautics industry, diamond-coated drills find large potentialities in commercial applications. However, the poor adhesion of the diamond film on the substrate and high surface roughness of the drill flute adversely affect the tool lift and machining quality and they become the main technical barriers for the successful development and commercialization of diamond-coated drills. In this paper, diamond thin films were deposited on the commercial WC-Co based drills by the electron aided hot filament chemical vapor deposition (EACVD). A new multiple coating technology based on changing gas pressure in different process stages was developed. The large triangular faceted diamond grains may have great contribution to the adhesive strength between the film and the substrate, and the overlapping ball like blocks consisted of nanometer sized diamond crystals may contribute much to the very low roughness of diamond film. Adhesive strength and quality of diamond film were evaluated by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectrum and drilling experiments. The ring-block tribological experiments were also conducted and the results revealed that the friction coefficient increased with the surface roughness of the diamond film. From a practical viewpoint, the cutting performances of diamond-coated drills were studied by drilling the SiC particles reinforced aluminum-matrix composite. The good adhesive strength and low surface roughness of flute were proved to be beneficial to the good chip evacuation and the decrease of thrust and consequently led to a prolonged tool lift and an improved machining quality. The wear mechanism of diamond-coated drills is the abrasive mechanical attrition.

• Clean Technology
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• v.16 no.1
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• pp.46-50
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• 2010

This study focuses on the removal of water-suspended toluene of a representative sick house compounds in a liquid photo-system using nanometer-sized Sn-incorporated $TiO_2$ which was synthesized by a solvothermal method. The characteristics of the synthesized Sn-$TiO_2$ were analyzed by X-ray Diffraction (XRD), Transmission electron microscopy (TEM), Scanning electron microscopy (SEM), and UV-visible spectroscopy (UV-Vis). To estimate the photocatalytic activity of Sn-$TiO_2$, the photodegradation of water-suspended toluene was performed, and the remaining concentration was determined using UV-visible spectroscopy. The water-suspended toluene photodegradation over Sn-incorporated $TiO_2$ catalyst was better than that over pure $TiO_2$ (anatase). The water-suspended toluene of 500 ppm was perfectly decomposed within 300 minutes over 0.01 mol% Sn-$TiO_2$.

• Advances in nano research
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• v.14 no.1
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• pp.1-15
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• 2023

Driven by the scaling down of transistor node technology, graphene became of interest to many researchers following the success of its fabrication as graphene nanoribbons (GNRs). However, during the fabrication of GNRs, it is not uncommon to have defects within the GNR structures. Scaling down node technology also changes the modelling approach from the classical Boltzmann transport equation to the quantum transport theory because the quantum confinement effects become significant at sub-10 nanometer dimensions. The aim of this study is to examine the effect of Stone-Wales defects on the electronic properties of GNRs using a tight-binding model, based on Non-Equilibrium Green's Function (NEGF) via numeric computation methods using MATLAB. Armchair and zigzag edge defects are also implemented in the GNR structures to mimic the practical fabrication process. Electronic properties of pristine and defected GNRs of various lengths and widths were computed, including their band structure and density of states (DOS). The results show that Stone-Wales defects cause fluctuation in the band structure and increase the bandgap values for both armchair GNRs (AGNRs) and zigzag GNRs (ZGNRs) at every simulated width. In addition, Stone-Wales defects reduce the numerical computation DOS for both AGNRs and ZGNRs. However, when the lengths of the structures increase with fixed widths, the effect of the Stone-Wales defects become less significant.

• Current Optics and Photonics
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• v.7 no.1
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• pp.38-46
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• 2023

Optical Fourier-domain reflectometry (OFDR) sensors have been widely used to measure distances with high resolution and speed in a noncontact state. In the electroplating process of a printed circuit board, it is critically important to monitor the copper-plating thickness, as small deviations can lead to defects, such as an open or short circuit. In this paper we employ a phase-based OFDR sensor for in situ relative distance sensing of a sample with nanometer-scale resolution, during electroplating. We also develop an optical-path difference (OPD)-regulated sensing probe that can maintain a preset distance from the sample. This function can markedly facilitate practical measurements in two aspects: Optimal distance setting for high signal-to-noise ratio OFDR sensing, and protection of a fragile probe tip via vertical evasion movement. In a sample with a centimeter-scale structure, a conventional OFDR sensor will probably either bump into the sample or practically out of the detection range of the sensing probe. To address this limitation, a novel OPD-regulated OFDR system is designed by combining the OFDR sensing probe and linear piezo motors with feedback-loop control. By using multiple OFDR sensors, it is possible to effectively monitor copper-plating thickness in situ and uniformize it at various positions.

• Progress in Medical Physics
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• v.33 no.4
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• pp.114-120
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• 2022

Purpose: Particle beam therapy is advantageous over photon therapy. However, adequately delivering therapeutic doses to tumors near critical organs is difficult. Nanoparticle-aided radiation therapy can be used to alleviate this problem, wherein nanoparticles can passively accumulate at higher concentrations in the tumor tissue compared to the surrounding normal tissue. In this study, we investigate the dose enhancement effect due to gold nanoparticle (GNP) when Carbon-12, He-4, and proton beams are irradiated on GNP. Methods: First, monoenergetic Carbon-12 and He-4 ion beams of energy of 283.33 MeV/u and 150 MeV/u, respectively, and a proton beam of energy of 150 MeV were irradiated on a water phantom of dimensions 30 cm×30 cm×30 cm. Subsequently, the secondary-particle information generated near the Bragg peak was recorded in a phase-space (phsp) file. Second, the obtained phsp file was scaled down to a nanometer scale to irradiate GNP of diameter 50 nm located at the center of a 4 ㎛×4 ㎛×4 ㎛ water phantom. The dose enhancement ratio (DER) was calculated in intervals of 1 nm from the GNP surface. Results: The DER of GNP computed at 1 nm from the GNP surface was 4.70, 4.86, and 4.89 for Carbon-12, He-4, and proton beams, respectively; the DER decreased rapidly with increasing distance from the GNP surface. Conclusions: The results indicated that GNP can be used as radiosensitizers in particle beam therapy. Furthermore, the dose enhancement effect of the GNP absorbed by tumor cells can aid in delivering higher therapeutic doses.

• Advances in nano research
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• v.15 no.5
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• pp.441-449
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• 2023

Heavy metals, widely present in the environment, have become significant pollutants due to their excessive use in industries and technology. Their non-degradable nature poses a persistent environmental problem, leading to potential acute or chronic poisoning from prolonged exposure. Recent research has focused on separating heavy metals, particularly from industrial and mining sources. Industries such as metal plating, mining operations, tanning, wood and chipboard production, industrial paint and textile manufacturing, as well as oil refining, are major contributors of heavy metals in water sources. Therefore, removing heavy metals from water is crucial, especially for safe water supply in swimming and water sports. Iron oxide nanoparticles have proven to be highly effective adsorbents for water contaminants, and efforts have been made to enhance their efficiency and absorption capabilities through surface modifications. Nanoparticles synthesized using plant extracts can effectively bind with heavy metal ions by modifying the nanoparticle surface with plant components, thereby increasing the efficiency of heavy metal removal. This study focuses on removing lead from industrial wastewater using environmentally friendly, cost-effective iron nanoparticles synthesized with Genovese basil extract. The synthesis of nanoparticles is confirmed through analysis using Transmission Electron Microscope (TEM) and X-ray diffraction, validating their spherical shape and nanometer-scale dimensions. The method used in this study has a low detection limit of 0.031 ppm for measuring lead concentration, making it suitable for ensuring water safety in swimming and water sports.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.55-60
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• 2024

Two-dimensional (2D) RuO₂ nanosheets with nanometer thickness were synthesized using a chemical exfoliation method. The synthesized 2D-RuO₂ was hybridized with Ag-nanowire (NW), which is attracting attention as a next-generation transparent electrode material. After coating Ag-NW on the substrate, 2D-RuO₂ was subsequently coated on the Ag-NW. Although there was a decrease in optical transmittance, the hybridization of 2D-RuO₂ confirmed the effect of reducing sheet resistance. Furthermore, the flexibility of the fabricated transparent electrodes was also studied. It was confirmed by the change in sheet resistance after bending. The additional coating of 2D-RuO₂ improved the flexibility of the transparent electrodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.