• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2005.05a
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• pp.423-423
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• 2005

A carbon nanotube-based nanoelectromechanical device in resonance is examined theoretically. Mechanical deflections are electrically induced and resonantly excited at the fundamental frequency in cantilevered carbon nanotube. The electrically conducting elastic beam with van der Waals interactions at the tip is used for the modeling of the carbon nanotube device. Due to the elastic, electrical, and van der Waals interactions, the total energy of the system shows the unsymmetric two-well potentials. The predictions can be made that the device exhibits its nonlinear dynamic features in the two-well potentials. Also it is predicted that the fundamental frequency of the carbon nanotube device was changed by the nonlinear interactions induced by electrical and van der Waals potentials between carbon nanotube and ground surface of the device.

• Journal of Mechanical Science and Technology
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• v.19 no.9
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• pp.1711-1719
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• 2005

In an electro statically actuated nanoelectromechanical system (NEMS) resonator, it is shown that both the resonance frequency and the resonance quality (Q) factor can be manipulated. How much the frequency and quality factor can be tuned by excitation voltage and resistance on a doubly-clamped beam resonator is addressed. A mathematical model for investigating the tuning effects is presented. All results are shown based on the feasible dimension of the nanoresonator and appropriate external driving voltage, yielding up to 20 MHz resonance frequency. Such parameter tuning could prove to be a very convenient scheme to actively control the response of NEMS for a variety of applications.

• Carbon letters
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• v.13 no.1
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• pp.17-22
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• 2012

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for high-performance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

• Journal of Microbiology and Biotechnology
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• v.17 no.1
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• pp.5-14
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• 2007

Nanotechnology is the creation and utilization of materials, devices, and systems through the control of matter on the nanometer. The technology has been applied to biodevices such as bioelectronics and biochips to improve their performances. Nanoparticles, such as gold (Au) nanoparticles, are the most widely used of the various other nanotechnologies for manipulation at the nanoscale as well as nanobiosensors. The immobilization of biomolecules is playing an increasingly important role in the development of biodevices with high performance. Nanopatteming technology, which is able to increase the density of chip arrays, offers several advantages, including cost lowering, simultaneous multicomponent detection, and the efficiency increase of biochemical reactions. A microftuidic system incorporated with control of nanoliter of fluids is also one of the main applications of nanotechnologies. This can be widely utilized in the various fields because it can reduce detection time due to tiny amounts of fluids, increase signal-to-noise ratio by nanoparticles in channel, and detect multi-targets simultaneously in one chamber. This article reviews nanotechnologies such as the application of nanoparticles for the detection of biomolecules, the immobilization of biomolecules at nanoscale, nanopatterning technologies, and the microfluidic system for molecular diagnosis.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.