• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.657-657
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• 2013

In-situ observations of nano-scale behavior of nanomaterials are very important to understand onthe nano-scale phenomena associated with phase change, atomic movement, electrical or optical properties, and even reactions which take place in gas or liquid phases. We have developed on the in-situ experimental technologies of nano-materials (nano-cluster, nanowire, carbon nanotube, and graphene, et al.) and their interactions (percolation of metal nanoclusters, inter-diffusion, metal contacts and phase changes in nanowire devices, formation of solid nano-pores, melting behavior of isolated nano-metal in a nano-cup, et al.) by nano-discovery membrane platform [1-4]. Between two microelectrodes on a silicon nitride membrane platform, electrical percolations of metal nano-clusters are observed with nano-structures of deposited clusters. Their in-situ monitoring can make percolation devices of different conductance, nanoclusters based memory devices, and surface plasmonic enhancement devices, et al. As basic evidence on the phase change memory, phase change behaviors of nanowire devices are observed at a nano-scale.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.146.1-146.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.154.2-154.2
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.4.1-4.1
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• 2009

The dream of futurists andtechnologists is to build complex, multifunctional machines so small that theycan only be seen with the aid of a microscope. The unprecedented technologyadvancements in miniaturizing integrated circuits on semiconductors, and theresulting plethora of sophisticated, low cost electronic devices demonstratethe impact that micro/nano scale engineering can have when applied only to thearea of electrical and computer engineering. Emerging research efforts indeveloping organic and inorganic nano materials together with using micro/nanofabrication techniques for implementing integrated multifunctional devices hopeto yield similar revolutions in other engineering fields. By cross linking theindividual engineering fields through micro/nano technology, various organicand inorganic materials and miniaturized system devices can be developed thatwill have future impacts in the IT and life science applications. Yet to buildthe complex micromachines and nanomachine of the future, engineering will needto develop the technology capable of seamlessly integrating these materials andsubsystems together at the micro and nano scales. The micromachines of thefuture will be “integrated nanosystems,” complex devices requiring the integration of multiple materials,phenomena, technologies, and functions at the same platform. To develop thistechnology will require great efforts in materials science and engineering, infundamental and applied sciences. In this talk, we will first discuss thenature of micro and nanotechnology research for IT and life sciences, and thenintroduce selected current activities in micro and nanotechnology research fororganic and inorganic materials and devices. The newly developed micro/nanofabrication processes and devices, combined with in-depth scientificunderstandings of materials, can lead to rapid development of next generationsystems for applications in IT and life sciences.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.144-145
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.307-307
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.133-139
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• 2007

Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.