• Applied Microscopy
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• 제33권3호
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• pp.195-204
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• 2003

Imaging plate에 기록된 전자회절 자료의 면간 거리 분석과 상동정시 나타나는 오차 요인들을 고찰하고 실험적인 보정방법을 도출하였다. 각각의 회절방향에 대한 radial intensity distribution plot과 실험적으로 도출된 면간 거리 보정식에 의해 전자회절 자료의 디지털 이미지에서 면간 거리 측정오차는 약 0.5%로 낮아짐을 알 수 있었다. Al 표준시료를 이용하여 imaging plate에 기록된 전자회절 자료의 면간 거리 편차 경향을 분석한 후 [001] gibbsite 시편에 동일한 실험적 보정을 수행하여 120분간의 전자빔 조사로부터 형성된 여러 전이 상들에 대한 면간 거리 측정 및 상 동정을 보다 정밀히 수행할 수 있었다. 그 결과, gibbsite로부터 형성된 주요 전이상들은 ${\chi}$-알루미나, ${\gamma}$-알루미나, ${\sigma}$-알루미나로 구성됨을 명확하게 동정할 수 있었다.

• Applied Microscopy
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• 제45권4호
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• pp.203-207
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• 2015

Sample preparation is very important for crystal structure analysis of novel nanostructured materials in electron microscopy. Generally, a grid dispersion method has been used as transmission electron microscope (TEM) sampling method of nano-powder samples. However, it is difficult to obtain the cross-sectional information for the tabular-structured materials. In order to solve this problem, we have attempted a new sample preparation method using focused ion beam. Base on this approach, it was possible to successfully obtain the electron diffraction patterns and high-resolution TEM images of the cross-section of tabular structure. Finally, we were able to obtain three-dimensional crystallographic information of novel zeolite nano-crystal of the tabular morphology by applying the new sample preparation technique.

• 한국표면공학회지
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• 제43권4호
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• 한국결정성장학회지
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• 제20권1호
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• pp.1-6
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• 2010

혼합소스 hydride vapor phase epitaxy(HVPE) 방법으로 CuInGaSe(CIGS) 혼합 소스를 형성하였다. 각 금속들은 일정 비율로 혼합하였고, $1090^{\circ}C$에서 1시간 30분간 soaking 하였다. 혼합된 소스를 분말형태로 만든 후, 직경 10 mm 크기의 pellet을 만들었다. 시료는 혼합소스 HVPE 에서 소성 한 후 e-beam 으로 Mo이 증착된 기판 위에 증착하였다. Scanning electron microscope(SEM), Energy dispersive X-ray spectrum(EDS) 그리고 X-ray diffraction(XRD) 측정을 통하여 그 특성을 분석하였으며 박막의 특성은 (112), (204)/(220), (116)/(312)그리고 (400) 방향 등의 다결정 특성을 나타내었다.

• 한국세라믹학회지
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• 제55권6호
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• pp.581-589
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• 2018

This work concentrated on the effect of different laser beams on the microstructure and dielectric properties of $BaTiO_3$ nanoparticles at different calcinations times during the gelling preparation step. The nanoparticles were prepared by the sol-gel method. A green (1000 mW, 532 nm) and red laser beam (500 mW, 808 nm), were applied vertically at the center of stirring raw materials. The samples were sintered at $1000^{\circ}C$ for 2, 4, and 6 h. X-ray diffraction (XRD) analysis showed that samples prepared under the green laser have the highest purity. The FT-IR spectra showed that the stretching and bending vibrations of TiO bond without any other bonds, which are compatible to the X-ray diffraction (XRD) results. Samples were characterized by transmission electron microscopy (TEM), Scan electron microscopy (SEM), and UV-Visible spectrophotometer. Characterization showed the samples prepared under the green laser to have the highest particle size (~ 50 nm) and transparency for all sintering durations. Laser beam effects on electrical characterization were studied. BT nanoparticles prepared under the green laser show the higher dielectric constant, which was found to increase with sintering temperature.

• 한국진공학회지
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• 제19권5호
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• pp.365-370
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• 2010

분자선 에피택시 방법을 이용하여 GaAs 기판 위에 GaAs 및 AlGaAs 에피층을 성장하면서 성장 멈춤 효과를 연구하였다. 성장 멈춤 시간에 따른 에피층 성장 과정은 반사 고에너지 전자회절로 측정하였다. 성장 멈춤 시간은 0, 15, 30, 60초로 하였다. 그리고 성장 멈춤 시간을 달리하여 GaAs/$Al_{0.3}Ga_{0.7}As$ 다양자우물을 성장한 후 양자우물의 특성을 조사하였다. 반사 고에너지 전자회절의 강도 진동은 성장 멈춤 시간에 영향을 받고 있었다. 그리고 양자우물의 광특성도 성장 멈춤 시간에 의존하고 있었다. 성장 멈춤 시간이 30초일 때 우물과 장벽층 사이에 급준한 계면을 가지는 에피층을 얻을 수 있었다.

• Current Optics and Photonics
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• 제5권3호
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• pp.229-237
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• 2021

The capabilities of the near-field scanning optical microscope (NSOM) for obtaining high resolution lateral topographical images as well as for mapping the spectroscopic and optical properties of a sample below the diffraction limit of light have made it an attractive research field for most researchers dealing with optical characteristics of materials in nano scales. The apertured NSOM technique involves confining light into an aperture of sub-wavelength size and using it to illuminate a sample maintained at a distance equal to a fraction of the sub-wavelength aperture (near-field region). In this article, we present a setup for developing NSOM using a cantilever with a sub-wavelength aperture at the tip. A single laser is used for both cantilever deflection measurement and near-field sample excitation. The laser beam is focused at the apex of the cantilever where a portion of the beam is reflected and the other portion goes through the aperture and causes local near-field optical excitation of the sample, which is then raster scanned in the near-field region. The reflected beam is used for an optical beam deflection technique that yields topographical images by controlling the probe-sample in nano-distance. The fluorescence emissions signal is detected in far-field by the help of a silicon avalanche photodiode. The images obtained using this method show a good correlation between the topographical image and the mapping of the fluorescence emissions.

• 한국정밀공학회지
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• 제23권8호
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• pp.72-79
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• 2006

We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.364.1-364.1
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• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.605-608
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• 2008

The preparation and characteristics of flexible indium tin oxide electrodes grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll sputtering system for use in flexible optoelectronics In spite of low a PET substrate temperature, we can obtain the flexible electrode with a sheet resistance of 47.4 ohm/square and an average optical transmittance of 83.46 % in the green region of 500~550 nm wavelength. Both x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analysis results showed that all flexible ITO electrodes grown on the PET substrate were an amorphous structure with a very smooth and featureless surface, regardless of the Ar/$O_2$ flow ratio due to the low substrate temperature, which is maintained by a cooling drum. In addition, the flexible ITO electrode grown on the Ar ion beam treated PET substrates showed more stable mechanical properties than the flexible ITO electrode grown on the wet cleaned PET substrate, due to an increased adhesion between the flexible ITO and the PET substrates.