• Advances in nano research
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• v.3 no.1
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.

• Journal of ILASS-Korea
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• v.13 no.1
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• pp.34-41
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• 2008

Molecular dynamic simulations have been carried out to study the effect of the nano-structure substrate and its temperature on cluster laminating. The interaction between substrate molecules and liquid molecules was modeled in the molecular scale and simulated by the molecular dynamics method in order to understand behaviors of the liquid cluster on nano-structure substrate. In the present model, the Lennard-Jones potential is applied to mono-atomic molecules of argon as liquid and platinum as nano-structure substrate to perform simulations of molecular dynamics. The effect of wettability on a substrate was investigated for the various beta of Lennard-Jones potential. The behavior of the liquid cluster and nano-structure substrate depends on interface wettability and function of molecules force, such as attraction and repulsion, in the collision progress. Furthermore, nano-structure substrate temperature and beta of Lennard-Jones potential have effect on the accumulation ratio. These results of simulation will be the foundation of coating application technology for micro fabrication manufacturing.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.10 s.253
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• pp.1314-1319
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• 2006

This paper describes the novel fabrication method of the high-aspect-ratio nano structure which is impossible by conventional method using a shadow mask and a Deep X-ray Lithography (DXRL). The shadow mask with $1{\mu}m-sized$ apertures is fabricated on the silicon membrane using a conventional UV-lithography. The size of aperture is reduced to 200nm by accumulated low stress silicon nitride using a LPCVD (low pressure chemical vapor deposition) process. The X-ray mask is fabricated by depositing absorber layer (Au, $3{\mu}m$) on the back side of nano shadow mask. The thickness of an absorber layer must deposit dozens micrometers to obtain contrast more than 100 for a conventional DXRL process. The thickness of $3{\mu}m-absorber$ layer can get sufficient contrast using a central beam stop method, blocking high energy X-rays. The nano circle and nano line, 200nm in diameter in width, respectively, were demonstrated 700nm in height with a negative photoresist of SU-8.

• Journal of the Korean institute of surface engineering
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• v.45 no.4
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• pp.151-154
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• 2012

A hydrophobic surface has been fabricated on aluminum by two-step surface treatment processes consisting of structure modification and surface coating. Nature inspired micro nano scale structures were artificially created on the aluminum surface by a blasting and Ar ion beam etching. And a hydrophobic thin film was coated by a trimethylsilane ($(CH_3)_3SiH$) plasma deposition to minimize the surface energy of the micro nano structure surface. The contact angle of micro nano structured aluminum surface with the trimethylsilane coating was $123^{\circ}$ (surface energy: 9.05 $mJ/m^2$), but the contact angle of only trimethylsilane coated sample without the micro nano surface structure was $92^{\circ}$ (surface energy: 99.15 $mJ/m^2$). In the hydrophobic treatment of aluminum surface, a trimethylsilane coated sample having the micro nano structure was more effective than only trimethylsilane coated sample without the micro nano structure.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.4
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• pp.413-418
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• 2021

Nano-materials with high effective surface areas have been applied to functional materials, such as high sensitive gas sensors and biosensors and high-efficiency catalytic materials. In this study, titanate sheets with a 3D nano-wall-like structure, high effective surface area, were synthesized vertically to the substrate by a chemical bath deposition (CBD) process using a Ti sheet and urea. The synthesis temperature and synthesis duration time were controlled to the optimal conditions of a 3D nano-wall-like structure in the CBD process. The synthesized ammonium titanate sheets with a 3D nano-wall-like structure were annealed in air to transform to TiO2 with a 3D nano-wall-like structure for various applications. As a result, the optimal temperature in the CBD process for the synthesis of a uniform ammonium titanate sheet with a 3D nano-wall-like structure was 90 ℃. TiO2 with a 3D nano-wall-like structure was obtained from the ammonium titanate sheet with a 3D nano-wall-like structure by annealing above 550 ℃ for three hours. In particular, TiO2 with a 3D nano-wall-like structure with a dominant rutile phase was obtained by post-annealing at 700 ℃. On the other hand, damage to the 3D nano-wall edge was observed after 700 ℃ post-annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.238.2-238.2
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• 2014

Bottom emission type의 유기발광다이오드는 ITO glass와 Al 사이에 유기물 층이 샌드위치 구조로 존재하며, 발광층에서 발생된 빛은 방사 방향으로 퍼져나간다. 이때 bottom으로 이동하는 빛은 굴절률이 서로 다른 박막을 통과하면서 초기 발생된 빛 중 20%만이 air로 빠져나온다. 특히 glass와 air사이의 굴절률이 달라 발생되는 전반사에 의해 손실되는 빛의 양은 35%에 달한다. 따라서 본 연구에서는 glass와 air사이의 전반사를 줄이고 효과적으로 발광량을 추출하기 위해 열경화성 고분자를 사용하여 nano-structure를 제작하였다. 열경화성 고분자의 nano-structure를 제작하는데 있어 영향을 주는 온도, 압력 요인을 확인하였고, 투과율 99.6%, 직경 250 nm의 고밀도 nano-structure를 제작하였으며, 유기발광다이오드의 전기 광학적 특성에 미치는 효과를 살펴보았다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.340-343
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• 2008

This work reports the simple fabrication of the single cell gap transflective liquid crystal display (LCD) using wire grid polarizer. The nano sized wire grid polarizer was patterned on common electrode itself, on the reflective part of FFS (Fringe field switching) mode whereas the common electrode was unpatterned at transmissive part. However, this structure didn't show single gamma curve, so we further improved the device by patterning the common electrode at transmissive part. As a result, V-T curve of proposed structure shows single gamma curve. Such a device structure is free from in-cell retarder, compensation film and reflector and furthermore it is very thin and easy to fabricate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.411-412
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• 2012

대부분의 상용 LED는 사파이어기판에 성장된 GaN를 기반으로 사용한다. GaN는 $1,000^{\circ}C$ 이상의 높은 온도에서 성장이 이루어지는데 이 경우 GaN과 사파이어 기판과의 높은 열팽창 계수로 인하여 compressive stress를 받게 된다. 이 compressive stress로 인하여 성장된 GaN wafer에 bowing이 일어나게 되고 이는 기판의 대면적화에 커다란 문제로 작용한다. 이런 문제들을 해결하기 위해 여러 방법이 고안되고 있지만 [1,2], 근본적으로 wafer bowing 문제의 해결은 이루어지고 있지 않다. 한편, 일반적으로 박막을 성장할 때 columnar structure를 가지는 박막이 coalescence되면 박막에 tensile stress가 걸린다는 사실이 알려져 있으며 [3], GaN를 저온에서 성장할 경우 columnar structure를 갖는다는 사실이 보고되었다 [4]. 본 연구에서는 이런columnar structure를 갖는 GaN을 이용하여 wafer bowing 문제가 해결된 GaN 박막 성장을 연구하였다. 본 실험에서는, c-plane 사파이어에 유기금속화학증착법(MOCVD)을 이용하여 nano-columnar structure를 갖는 저온 GaN layer을 성장하였다. 그 후 columnar structure를 유지하면서 $1,040^{\circ}C$까지 annealing한 후 고온에서 flat 한 GaN 박막을 nano-columnar structure GaN layer위에 성장 하였다. 우선 저온 GaN layer가 nano-columnar structure를 갖고, 고온에서도 nano-columnar structure가 유지되는 것을 scanning electron microscopy (SEM)과 transmission electron microcopy (TEM)을 통해 확인하였다. 또한 이런 columnar structure 위에 고온에서 성장시킨 flat한 GaN 박막이 성장된 것을 관찰할 수 있었다. 성장된 GaN박막의 wafer bowing 정도를 측정한 결과, columnar structure를 갖고 있는 고온 GaN 박막이 일반적인 GaN에 비해 확연하게 wafer bowing이 감소된 것을 확인할 수 있었다. Columnar structure가 coalescence가 되면서 생기는 tensile stress가 GaN박막의 성장시 발생하는 compressive stress를 compensation하여 wafer bowing이 줄어든 것으로 보인다. 본 발표에서는 이 구조에 대한 구조 및 stress 효과에 대해서 논의할 예정이다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.10
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• pp.1306-1311
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• 2020

In this study, we proposed an anti-reflective nano-structure to improve the photoresponsivity of AlGaN UV photodiode that can be used as a receiver in a solar blind UV optical communication system. The anti-reflective nano-structure was fabricated by forming Ni nano-clusters on SiO2 film followed by etching the underneath SiO2 film. A sample with the anti-reflective nano-structure exhibited lower surface reflection along with less dependency on the wavelength in comparison with a sample without the nano-structure. Finally, a UV photodiode was fabricated by applying an anti-reflective structure produced by heat-treating a 2 nm-thick Ni layer. The photodiode fabricated with the proposed nano-structure exhibited noticeable improvement in the photoresponsivity at the wavelength range from 240 nm to 270 nm in comparison with the same photodiode with a SiO2 film without the nano-structure.