• Title/Summary/Keyword: nano open

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Synthesis and Properties of Dual Structured Carbon Nanotubes (DSCNTs)

  • Cho, Se-Ho;Kim, Do-Yoon;Heo, Jeong-Ku;Lee, Young-Hee;An, Kay-Hyeok;Kim, Shin-Dong;Lee, Young-Seak
    • Carbon letters
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    • v.7 no.4
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    • pp.277-281
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    • 2006
  • In this study, in order to easily provide functional groups on the surface of carbon nanotubes, dual structural multiwalled carbon nanotubes which have crystalline graphite and turbostratic carbon wall were synthesized by modified vertical thermal decomposition method. Synthesized dual structural MWCNTs were characterized by FE-SEM, TGA, HR-TEM, Raman spectroscopy and BET specific surface area analyzer. The average innermost and outermost diameters of the synthesized nanotubes were around 45 and 75 nm, respectively. The large empty inner space and the presence of graphitic carbons on the surface may open potential applications for gas storage and collection of hazardous materials.

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On vibration properties of functionally graded nano-plate using a new nonlocal refined four variable model

  • Belkorissat, Ismahene;Houari, Mohammed Sid Ahmed;Tounsi, Abdelouahed;Bedia, E.A. Adda;Mahmoud, S.R.
    • Steel and Composite Structures
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    • v.18 no.4
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    • pp.1063-1081
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    • 2015
  • In this paper, a new nonlocal hyperbolic refined plate model is presented for free vibration properties of functionally graded (FG) plates. This nonlocal nano-plate model incorporates the length scale parameter which can capture the small scale effect. The displacement field of the present theory is chosen based on a hyperbolic variation in the in-plane displacements through the thickness of the nano-plate. By dividing the transverse displacement into the bending and shear parts, the number of unknowns and equations of motion of the present theory is reduced, significantly facilitating structural analysis. The material properties are assumed to vary only in the thickness direction and the effective properties for the FG nano-plate are computed using Mori-Tanaka homogenization scheme. The governing equations of motion are derived based on the nonlocal differential constitutive relations of Eringen in conjunction with the refined four variable plate theory via Hamilton's principle. Analytical solution for the simply supported FG nano-plates is obtained to verify the theory by comparing its results with other available solutions in the open literature. The effects of nonlocal parameter, the plate thickness, the plate aspect ratio, and various material compositions on the dynamic response of the FG nano-plate are discussed.

Nickel Oxide Nano-Flake Films Synthesized by Chemical Bath Deposition for Electrochemical Capacitors (CBD(Chemical Bath Deposition) 법으로 제조된 전기화학식 캐패시터용 NiO 나노박편 필름)

  • Kim, Young-Ha;Park, Soo-Jin
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.163.2-163.2
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    • 2010
  • In this work, nano-flake shaped nickel oxide (NiO) films were synthesized by chemical bath deposition technique for electrochemical capacitors. The deposition was carried out for 1 and 2 h at room temperature using nickel foam as the substrate and the current collector. The structure and morphology of prepared NiO film were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And, electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge-discharge, and AC impedence measurement. It was found that the NiO film was constructed by many interconnected NiO nano-flakes which arranged vertically to the substrate, forming a net-like structure with large pores. The open macropores may facilitate the electrolyte penetration and ion migration, resulted in the utilization of nickel oxide due to the increased surface area for electrochemical reactions. Furthermore, it was found that the deposition onto nickel foam as substrate and curent collector led to decrease of the ion transfer resistance so that its specific capacitance of a NiO film had high value than NiO nano flake powder.

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New Design and Synthesis of Donor-Acceptor units by Introducing Boron Based to Non-Boron based Semiconductor for high Voc OPV

  • Ryu, Ka Yeon;Cho, Kyuwan;Kim, Won-Suk;Kim, Kyungkon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.432.2-432.2
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    • 2016
  • A new A-D-A type (Acceptor-Donor-Acceptor) conjugated based on pyridine-borane complex (Donor), non-boron fluorine (Donor) and 2,5-bis(alkyl)-3,6-di(thiophen-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DPP) (Acceptor) were designed and synthesized via Pd-catalyzed Suzuki cross-coupling reaction. The synthesized boron based complex exhibited high electron affinity, which indicates deep HOMO energy levels and good visible absorption led to their use as donors in BHJ (bulk heterojunction) solar cells. Inverted devices were fabricated, reaching open-circuit voltage as high as 0.91eV. To probe structure-property relationship and search for design principle, we have synthesized pyridine-boron based electron donating small molecules. In this study, we report a new synthetic approach, molecular structure, charge carrier mobility and morphology of blended film and their correlation with the photovoltaic J-V characteristics in details.

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Design and analysis of a signal readout integrated circuit for the bolometer type infrared detect sensors (볼로미터형 적외선 센서의 신호처리회로 설계 및 특성)

  • Kim, Jin-Su;Park, Min-Young;Noh, Ho-Seob;Lee, Seoung-Hoon;Lee, Je-Won;Moon, Sung-Wook;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.475-483
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    • 2007
  • This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

Structural damaging in few -layer graphene due to the low energy electron irradiation

  • Guseinov, Nazim R.;Baigarinova, Gulzhan A.;Ilyin, Arkady M.
    • Advances in nano research
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    • v.4 no.1
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    • pp.45-50
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    • 2016
  • Data of Raman spectroscopy from graphene and few-layer graphene (FLG) irradiated by SEM electron beam in the range of energies 0.2 -30 keV are presented. The obvious effect of damaging the nanostructures by all used beam energies for specimens placed on insulator substrates ($SiO_2$) was revealed. At the same time, no signs of structural defects were observed in the cases when FLG have been arranged on metallic substrate. A new physical mechanism of under threshold energy defect production supposing possible formation of intensive electrical charged puddles on insulator substrate surface is suggested.

Fabrication of the ITO/Mesh-Ag/ITO Transparent Electrode using Ag Nano- Thin Layer with a Mesh Structure and Its Characterization (메쉬 구조의 Ag 나노박막을 이용한 ITO/Mesh-Ag/ITO 고전도성 투명전극 제조 및 특성 분석)

  • Lee, Dong Hyun;Cho, Eou Sik;Kwon, Sang Jik
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.100-104
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    • 2019
  • The 'ITO/Ag/ITO' multilayers as a highly conductive and transparent electrode, even with the optimum thickness conditions, the transmittances were much lower than those of a single ITO layer on some ranges of the visible wavelength. In order to improve the transmittance, Ag layer was formed with mesh structure. Where, the thickness of the Ag layer was about 10 nm and the space between the Ag lines was varied from 2.9 ㎛ to 19.6 ㎛ with the fixed Ag width of about 1.2 ㎛ in order to vary an open ratio of the Ag mesh structure. The transmittance and sheet resistance in the ITO/Mesh-Ag/ITO multilayer structure were analyzed depending on the open ratio. As a result, a trade off in the open ratio was necessary in order to obtain the transmittance as high as possible and the sheet resistance as possible low. By the open ratio of about 86%, in the ITO/Mesh-Ag/ITO multilayer structure, the transmittance was nearly same as the single ITO layer and the sheet resistance was about 62.3 Ω/.

Smartphone Color-Code based Gate Security Control

  • Han, Sukyoung;Lee, Minwoo;Mariappan, Vinayagam;Lee, Junghoon;Lee, Seungyoun;Lee, Juyoung;Kim, Jintae;Cha, Jaesang
    • International journal of advanced smart convergence
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    • v.5 no.3
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    • pp.66-71
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    • 2016
  • Smart building gate security control system using smartphone integrated with near field communication (NFC) has become part of daily life usage these days. The technology change in replacing RF NFC device using visible light communication technology based approach growing faster in recent days. This paper propose a design and development of gate security control system using color code based user authentication ID generation as part of an intelligent access control system to control automatic door open and close. In this approach gate security access control use the recent visible light communication technology trends to transfer the user specific authentication code to door access control system using color code on smartphone screen. Using a camera in the door access control system (ACS), color codes on smartphone screens are detected and matched to the database of authenticated user to open the door automatically in gate security system. We measure the visual light communication technology efficiency as a part of the research and the experiments have revealed that more than 95% users authenticated correctly at the suggested experiment environment on gate security control system.

Optimization of Etching Profile in Deep-Reactive-Ion Etching for MEMS Processes of Sensors

  • Yang, Chung Mo;Kim, Hee Yeoun;Park, Jae Hong
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.10-14
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    • 2015
  • This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.