• Progress in Superconductivity and Cryogenics
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• v.14 no.4
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• pp.12-15
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• 2012

$MgB_2$ superconductor is highly sensitive to the Mg content. Even if the samples are synthesized with the appropriate looking stoichiometric ratio, the heat treatment leads to the loss of Mg either to ambiance or to MgO. To avoid it, either excess Mg is added in the starting powder or sealed ampoule annealing is employed. In this paper the effect of open Mg sintering ambiance on the ex-situ $MgB_2$ was studied to enhance its superconducting properties. The open Mg ambiance was created to avoid any overpressure of Mg by providing a hole in Fe tube used as sample holder. The decrease in resistivity of the synthesized sample was observed through the increased temperature dependence of electron-phonon interactions. A clear enhancement in the superconducting cross-sectional area and hence the in-field critical current density is obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.37-41
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• 2001

Photo catalytic characteristics of nano-sized TiO$_2$ powder with rutile phase produced using homogeneous precipitation process at low temperatures (HPPLT) were compared with those of commercial P-25 powder by Degussa Co. The TiO$_2$ powder by HPPLT showed very higher photoactivity in the removal rate, showing lower pH values in the solution, than the P-25 powder when eliminating metal ions such as Pb and Cu from aqueous metal-EDTA solutions. This can be inferred the more rapid photo-oxidation or -reduction of metal ions from the aqueous solution, together with relatively higher efficiencies in the use of electron-hole pair formed on the surface of TiO$_2$ particle, under UV light irradiation. Also, in the view of the TiO$_2$ particle morphology, compared to the well-dispersed spherical P-25 particle, the agglomerated TiO$_2$ particle by HPPL T consists of acicular typed primary particle with the thickness ranged of 3∼7 nm, which would be more effective to the photocatalytic reactions without electron-hole recombination on the surface of the TiO$_2$ particle under the UV light irradiation. It is, therefore, thought that the higher photo activity of the rutile TiO$_2$ powder by HPPLT in the aqueous solutions resulted from having its higher specific surface area as well as acicular shape primary particle with very thin thickness.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.7
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• pp.1-12
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• 2014

This paper is proposed to design the new heat-sink apparatus for improving the heat transfer characteristics in the power LED chip, and results of the operation characteristics were discussed. The core design is that the soldering through-hole on the FR-4 PCB board is formed to the effective heat transfer. That is directly filled with Ag-nano materials, which shows the high thermal conductivity. The heat transfer medium consisting of Ag-nano materials is classified into two structures. Mediums are called as the heat slug and the multi-pin in this work. The heat of the high temperature generated from the LED chip was directly transferred to the heat slug of the one large size. And the accumulated heat from the heat slug was quickly dissipated by the medium of the multi-pin, which is the same body with the heat slug. This multi-pin was designed for the multi-dissipation of heat by increasing the surface areas with a little pins. Subsequently, the speed of the heat transfer with this new heat-sink apparatus is three times faster than the conventional heat-sink. Therefore, the efficiency of the illuminating light will be improved by adapting this new heat-sink apparatus in the large area's LED.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1924-1926
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• 2001

A novel wet release process ($\mu$ CARP - Micro Channel Assisted Release Process) for releasing an extreme large-area plate structure without etching hole is proposed and experimented. Etching holes in conventional process reduce a effective area and degrade an optical characteristics by a diffraction. In addition, as the area of a released structure increases, the stietion becomes more serious. The proposed process resolves these problems by the introduction of a micro fluidic channel beneath the structure which will be released. In this paper, a 5 mm${\times}$5mm-single crystal silicon plate structure was released by the proposed $\mu$CARP without etch holes on the structure. The variation in etching time with respect to the of the introduced micro channel is also examined. This process is expected to be beneficial for the actuator of a nano-scale data storage and the scanning mirror.

• Progress in Superconductivity
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• v.8 no.1
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• pp.119-121
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• 2006

We studied the mechanical and magnetic properties of Y-Ba-Cu-O superconductor with and without resin and Ag impregnation. Bulk YBCO superconductor was manufactured with the top-seeded melt-growth method. Typical sample of 40mm X 20mm X 3mm was made and then 8 holes with 0.5mm diameter were drilled arbitrally. Epoxy resin and $AgNO_3$ were systematically added into the holes to compare the mechanical and magnetic properties of YBCO superconductor before and after reinforcement of resin and Ag. Based on the result of 3 point bending, bending strength increased with increasing amounts of resin and carbon nano-tube. However, it was found that the levitation force decreased after making hole, compared with virgin sample without hole.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1358-1362
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• 2007

The structures, energetics and transfer integrals of the acene tetramers up to pentacene are investigated with the ab initio molecular orbital method at the level of second-order Møller-Plesset perturbation theory (MP2). Calculated geometries for the herringbone-style structures found in the crystal structure were characterized as local minima, however the geometrical discrepancy between crystal and MP2 theoretical structure is reasonably small. The binding energy of pentacene tetramer was calculated up to 40 kcal/mol (MP2/6-31G(d)) and about 90 kcal/mol (MP2/aug-cc-pVDZ), and the latter seems to be too much overestimated. The tendency of the hole transfer integrals computed with ab initio MP2/3-21G(d) geometry is well agreement with those estimated with crystal structure with some discrepancy, and the gradual increment of the transfer integrals at the crystal geometry is attributed to mainly packing structure rather than the intrinsic property of acene such as a size of acene.