• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.241-246
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• 2001

Single or dual ion implantations were performed onto the transparent polyethylene terephthalate(PET) sheet, and the surface hardness and the light transmittance in the visual-UV range were examined. Nanoindentation showed that the surface hardness was the highest at about 50 nm depth from the surface and was increased by about 3 times when nitrogen ions were implanted with energy and dose of 90 keV and $1\times10^{15}\textrm{/cm}^2$ respectively. When dual ions such as He+N and N+C ions were implanted into PET, the hardness was increased even more than the case only N ions were implanted. Especially, when PET were implanted with N+C dual ions, the surface hardness of PET increased 5 times more as compared to when implanted with N ions alone. The light at the 550 nm wavelength(visual range) transmitted more than 85%, which is close to that of as-received PET, and at the wavelength below 300 nm(UV range) the rays were absorbed more than 95% as traveling through the sheet. implying that there are processing parameters which the ion implanted PET maintains the transparency and absorbs the UV rays. It can be considered that the increase in the hardness of polymeric materials is attributed to not only cross linking but also forming hard inclusions such as hard C-N compounds, as evidenced by the formation of the highest hardness when both N and C ions are implanted onto PET.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.156-161
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• 2007

To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.

• Polymer(Korea)
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• v.36 no.4
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• pp.542-548
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• 2012

Morphological characteristics and formation of symmetric polystyrene-block-poly(1,4-butadiene) copolymer (PS-b-PBD) in thin films upon solvent-annealing were investigated by using atomic force microscopy (AFM). The thin films solvent-annealed in cyclohexane revealed the perforated lamellae of poly(1,4-butadiene) in the matrix of polystyrene while those solvent-annealed in n-hexane exhibited highly disordered patterns. Interestingly, when the thin films of PS-b-PBD were solvent-annealed with binary mixtures of cyclohexane and n-hexane, the morphological transition from the perforated lameallae to the perpendicularly-oriented lamellae of poly(1,4-butadiene) could be induced by changing the mixing ratio of both solvents. We also demonstrated that after microdomians of poly(1,4-butadiene) were successfully degraded by UV-$O_3$, linear poly(dimethyl siloxane) chains were back-filled into the etched regions of the thin film and then converted to silica nano-objects by oxygen plasma treatments.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.205-211
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• 2012

We investigated the optical and hydrophobic properties of the deposited silver (Ag) zinc oxide (ZnO) nanorods (NRs) on flexible indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates (i.e., ITO/PET). The ZnO NRs were grown by an electrochemical deposition using a sputtered ZnO seed layer and the Ag was deposited by using a thermal evaporator. For comparison, the same fabrication process was carried out on the bare ITO/PET without ZnO NRAs. Due to the discrete surface of ZnO NRs, the deposited Ag was formed as nano-scale particles, while the Ag became film-like for bare ITO/PET. In order to control the size and amount of Ag particles, the Ag deposition time was changed from 100 to 600 s. When the deposition time was increased, the Ag particles became larger and denser, and the absorptance was increased. This enhanced absorptance may be due to the localized surface plasmon resonance of Ag particles. Furthermore, the relatively high hydrophobicity was observed for the deposited Ag on the ZnO NRs/ITO/PET. These improved optical and surface properties are expected to be useful for flexible photovoltaic and optoelectronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.201-206
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• 2019

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of Industrial Convergence
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• v.20 no.10
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• pp.33-38
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• 2022

In this paper, a simple method of forming a solution-based carbon nanotube (CNT) for use as a conductive material for electronic devices was studied. The CNT thin film coating was performed on the glass by applying the spin coating method and the argon atmospheric pressure plasma process. In order to observe changes in electrical and physical properties according to the number of coatings, samples formed in the same manner from times 1 to 5 were prepared, and surface shape, reflectance, transmittance, absorbance, and sheet resistance were measured for each sample. As the number of coatings increased, the transmittance decreased, and the reflectance and absorptivity increased in the entire measurement wavelength range. Also, as the wavelength decreases, the transmittance decreases, and the reflectance and absorption increase. In the case of electrical properties, it was confirmed that the conductivity was significantly improved when the second coating was applied. In conclusion, in order to replace CNT with a transparent electrode, it is necessary to consider the number of coatings in consideration of reflectivity and electrical conductivity together, and it can be seen that 2 times is optimal.

• Membrane Journal
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• v.33 no.4
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• pp.149-157
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• 2023

Covalent organic frameworks (COFs) have shown promise in various applications, including molecular separation, dye separation, gas separation, filtration, and desalination. Integrating COFs into membranes enhances permeability, selectivity, and stability, improving separation processes. Combining COFs with single-walled carbon nanotubes (SWCNT) creates nanocomposite membranes with high permeability and stability, ideal for dye separation. Incorporating COFs into polyamide (PA) membranes improves permeability and selectivity through a synthetic interfacial strategy. Three-dimensional COF fillers in mixed-matrix membranes (MMMs) enhance CO₂/CH₄ separation, making them suitable for biogas upgrading. All-nanoporous composite (ANC) membranes, which combine COFs and metal-organic framework (MOF) membranes, overcome permeance-selectivity trade-offs, significantly improving gas permeance. Computational simulations using hypothetical COFs (hypoCOFs) demonstrate superior CO₂ selectivity and working capacity relevant for CO₂ separation and H₂ purification. COFs integrated into thin-film composite (TFC) and polysulfonamide (PSA) membranes enhance rejection performance for organic contaminants, salt contaminants, and heavy metal ions, improving separation capabilities. TpPa-SO₃H/PAN covalent organic framework membranes (COFMs) exhibited superior desalination performance compared to traditional polyamide membranes by utilizing charged groups to enable efficient desalination through electrostatic repulsion, suggesting their potential for ionic and molecular separations. These findings highlight COFs' potential in membrane technology for enhanced separation processes by improving permeability, selectivity, and stability. In this review, COF applied for the separation process is discussed.