• Journal of the Korean institute of surface engineering
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• v.54 no.5
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• pp.230-237
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• 2021

In this study, the influence of silicon contents on the microstructure, mechanical and tribological properties of Ti-Al-Si-N coatings were systematically investigated for application of cutting tools. The composition of the Ti-Al-Si-N coatings were controlled by different combinations of TiAl₂ and Ti₄Si composite target powers using an arc ion plating technique in a reactive gas mixture of high purity Ar and N₂ during depositions. Ti-Al-Si-N films were nanocomposite consisting of nanosized (Ti,Al,Si)N crystallites embedded in an amorphous Si₃N₄/SiO₂ matrix. The instrumental analyses revealed that the synthesized Ti-Al-Si-N film with Si content of 5.63 at.% was a nanocomposites consisting of nano-sized crystallites (5-7 nm in dia.) and a three dimensional thin layer of amorphous Si₃N₄ phase. The hardness of the Ti-Al-Si-N coatings also exhibited the maximum hardness value of about 47 GPa at a silicon content of ~5.63 at.% due to the microstructural change to a nanocomposite as well as the solid-solution hardening. The coating has a low friction coefficient of 0.55 at room temperature against an Inconel alloy ball. These excellent mechanical and tribological properties of the Ti-Al-Si-N coatings could help to improve the performance of machining and cutting tool applications.

• Advances in nano research
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• v.13 no.2
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• pp.199-206
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• 2022

We present the high-brightness large-area 10.1" in-cell polarizer display panel integrated with a wire grid polarizer (WGP) and metal reflector, from the initial design to final system development in a commercially feasible level. We have modeled and developed the WGP architecture integrated with the metal reflector in a single in-cell layer, to achieve excellent polarization efficiency as well as brightness enhancement through the light recycling effect. After the optimization of key experimental parameters via Taguchi method, the roll nanoimprint lithography employing a flexible large-area tiled mold has been utilized to create the 90 nm-pitch polymer resist pattern with the 54.1 nm linewidth and 5.1 nm residual layer thickness. The 90 nm-pitch Al gratings with the 51.4 nm linewidth and 2150 Å height have been successfully fabricated after subsequent etch process, providing the in-cell WGPs with high optical performance in the entire visible light regime. Finally we have integrated the WGP in a commercial 10.1" display device and demonstrated its actual operation, exhibiting 1.24 times enhancement of brightness compared to a conventional film polarizer-based one, with the contrast ratio of 1,004:1. Polarization efficiency and transmittance of the developed WGPs in an in-cell polarizer panel achieve 99.995 % and 42.3 %, respectively.

• Applied Chemistry for Engineering
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• v.34 no.1
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• pp.9-14
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• 2023

In this work, we developed a Nafion polymer-coated impedance sensor with two gold electrode configurations to measure the ion concentration in solution samples. The gold electrodes were fabricated through the sputtering process, followed by surface modification using Nafion polymer. The resulting sensors enable the prevention of the polarization phenomenon on the electrode surface, resulting in stable measurement of electrochemical signals. Spectroscopy and scanning electron microscopy measurements revealed that the thin film of Nafion was coated uniformly onto the surface of the gold electrode. The Nafion-coated sensor exhibited more stable impedance signals than the conventional gold electrode. It showed a highly reliable calibration curve (R² = 0.983) of the impedance sensor using a standard sodium chloride solution. In addition, a comparison experiment between the impedance sensor and a commercial conductivity sensor was performed to measure the ion concentration of artificial tears, showing similar results for the two sensors.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.124-129
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• 2023

This study assessed the influences of fluorine introduced into DLC films on the structural and mechanical properties of the sample. In addition, the effects of the fluorine incorporation on the compressive stress in DLC films were investigated. For this purpose, fluorinated diamond-like carbon (F-DLC) films were deposited on cobalt-chromium-molybdenum substrates using radio-frequency plasma-enhanced chemical vapor. The coatings were examined by Raman scattering (RS), Attenuated total reflectance Fourier transform infrared spectroscopic analysis (ATR-FTIR), and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by the Stony equation. The ATR-FTIR analysis revealed that F was present in the amorphous matrix mainly as C-F and C-F₂ groups. Based on Raman spectroscopy results, it was determined that F made the DLC films more graphitic. Additionally, it was shown that adding F into the DLC coating resulted in weaker mechanical properties and the F-DLC coating exhibited lower stress than DLC films. These effects were attributed to the replacement of strong C = C by feebler C-F bonds in the F-DLC films. F-doping decreased the hardness of the DLC from 11.5 to 8.8 GPa. In addition, with F addition, the compressive stress of the DLC sample decreased from 1 to 0.7 GPa.

• Advances in nano research
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• v.16 no.4
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• pp.341-352
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• 2024

This study investigates the heat and mass transfer characteristics of a MoS₂ nanoparticle suspension in ethylene glycol over a porous stretching sheet. MoS₂ nanoparticles are known for their exceptional thermal and chemical stability which makes it convenient for enhancing the energy and mass transport properties of base fluids. Ethylene glycol, a common coolant in various industrial applications is utilized as the suspending medium due to its superior heat transfer properties. The effects of variable thermal conductivity, variable mass diffusivity, thermal radiation and thermophoresis which are crucial parameters in affecting the transport phenomena of nanofluids are taken into consideration. The governing partial differential equations representing the conservation of momentum, energy, and concentration are reduced to a set of nonlinear ordinary differential equations using appropriate similarity transformations. R software and MATLAB-bvp5c are used to compute the solutions. The impact of key parameters, including the nanoparticle volume fraction, magnetic field, Prandtl number, and thermophoresis parameter on the flow, heat and mass transfer rates is systematically examined. The study reveals that the presence of MoS₂ nanoparticles curbs the friction between the fluid and the solid boundary. Moreover, the variable thermal conductivity controls the rate of heat transfer and variable mass diffusivity regulates the rate of mass transfer. The numerical and statistical results computed are mutually justified via tables. The results obtained from this investigation provide valuable insights into the design and optimization of systems involving nanofluid-based heat and mass transfer processes, such as solar collectors, chemical reactors, and heat exchangers. Furthermore, the findings contribute to a deeper understanding of stretching sheet systems, such as in manufacturing processes involving continuous casting or polymer film production. The incorporation of MoS₂-C₂H₆O₂ nanofluids can potentially optimize temperature distribution and fluid dynamics.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.7-12
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• 2017

Using a precursor of $LiNi_{0.6}Co_{0.2}Mn_{0.2}O_2$ as a starting material, a surface-modified cathode material was obtained by coating with KCl, where the added KCl reduces residual Li compounds such as $Li_2CO_3$ and LiOH, on the surface. The resulting electrochemical properties were investigated. The amounts of $Li_2CO_3$ and LiOH decreased from 8,464 ppm to 1,639 ppm and from 8,088 ppm to 6,287 ppm, respectively, with 1 wt% KCl added $LiNi_{0.6}Co_{0.2}Mn_{0.2}O_2$ that had been calcined at $800^{\circ}C$. X-ray diffraction results revealed that 1 wt% of KCl added $LiNi_{0.6}Co_{0.2}Mn_{0.2}O_2$ did not affect the parent structure but enhanced the development of hexagonal crystallites. Additionally, the charge transfer resistance ($R_{ct}$) decreased dramatically from $225{\Omega}$ to $99{\Omega}$, and the discharge capacity increased to 182.73mAh/g. Using atomic force microscopy, we observed that the surface area decreased by half because of the exothermic heat released by the Li residues. The reduced surface area protects the cathode material from reacting with the electrolyte and hinders the development of a solid electrolyte interphase (SEI) film on the surface of the oxide particles. Finally, we found that the introduction of KCl into $LiNi_{0.6}Co_{0.2}Mn_{0.2}O_2$ is a very effective method of enhancing the electrochemical properties of this active material by reducing the residual Li. To the best of our knowledge, this report is the first to demonstrate this phenomenon.

• Korean Journal of Optics and Photonics
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• v.21 no.2
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• pp.82-88
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• 2010

Photopolymer is a material for recording three dimensional holograms containing photo information. Photopolymer has been found to be a proper material due to many advantages such as high DE value, easy processing, and low price. Compositions of PVA, monomer, initiater and photosensitizer were determined by previous experiments and the compositions of $SeO_2$ and $TiO_2$ were considered as variable to find out the effects of $TiO_2$ on DE. The DE values were constant for the varying compositions of $TiO_2$ (0.1 mg~1.0 mg). In other words, $TiO_2$ is not directly effective on the DE values. Composition change experiments from $SeO_2$ 0.1 mg, $TiO_2$ 0.9 mg to $SeO_2$ 0.9 mg, $TiO_2$ 0.1 showed a maximum DE value of 73.75% at a component of $SeO_2$ 0.8 mg, $TiO_2$ 0.2 mg. It seemed that regardless of the amount of $TiO_2$, increasing the amount of $SeO_2$ gently increases DE`s. If nano particles are heavily added, transparent films could not be made due to the separation of particles by the solubility decrease. Photopolymer films could be made with high DE values for an extensive angle range if $TiO_2$ additions were kept minimum and $SeO_2$ additions were kept maximum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.