• Advances in nano research
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• 제13권5호
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• pp.475-485
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• 2022

Crystalline silicon photovoltaic cells have advantages of zero pollution, large scale and high reliability. A major challenge is that sunlight wavelength with photon energy lower than semiconductor band gap is converted into heat and increase its temperature and reduce its conversion efficiency. Traditional cooling PV method is using water flowing below the modules to cool down PV temperature. In this paper, the idea is proposed to reduce the temperature of the module and improve the energy conversion efficiency of the module through the modulation of the solar spectrum. A spectrally selective nanofilm reflector located directly on the surface of PV is designed, which can reflect sunlight wavelength with low photon energy, and even enhance absorption of sunlight wavelength with high photon energy. The results indicate that nanofilm reflector can reduce spectral reflectivity integral from 9.0% to 6.93% in 400~1100 nm wavelength range, and improve spectral reflectivity integral from 23.1% to 78.34% in long wavelength range. The nanofilm reflector can reduce temperature of PV by 4.51℃ and relatively improved energy conversion efficiency of PV by 1.25% when solar irradiance is 1000 W/m². Furthermore, the nanofilm reflector is insensitive in sunlight's angle and polarization state, and be suitable for high irradiance environment.

• 한국재료학회지
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• 제21권5호
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• pp.243-249
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• 2011

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

• 분석과학
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• 제22권3호
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• pp.247-253
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• 2009

단결정의 실리콘 웨이퍼를 hydrofluoric acid와 ethyl alcohol이 혼합된 용액에 담궈 적정한 전류를 흘려주면 웨이퍼 표면에 수많은 pore를 형성하면서 에칭되어진다. 이러한 pore의 형태와 porosity는 전류 값과 에칭 시간 및 주기를 변화시켜 쉽게 조절할 수 있는데, 이렇게 제작된 다공성 실리콘은 수백 $m^2/cm^3$의 큰 표면적을 가지게 된다. 이때 sin 파와 같은 모양으로 시간대별 가해지는 전류 밀도를 다르게 해주어 pore안쪽의 모양을 변화시켜 주어 가시광선 영역에서 하나의 spectrum을 나타나게 되는 rugate 박막을 제작 한다. 본 연구에서는 법과학적인 목적으로 코드화된 다공성 실리콘의 rugate film을 이용하여 nano particle을 제작한 다음 이 입자들을 페인트에 혼합, 차량에 도포하고, 회수 후에 이를 확인할 수 있는지 조사하였다. 본 연구에서는 또 다양하게 가해지는 전류 값을 변경 또는 혼합하여 다공성 실리콘에 다양한 코드화를 시도하였으며, 사고 시 탈착한 페인트에서 다공성 실리콘 nano particle을 회수 하기위해 다공성 실리콘 안에 magnetite를 삽입하여 자석을 이용한 미량 나노입자 시료를 응집시켜 스펙트럼을 확인하였다.

• 한국세라믹학회지
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• 제55권3호
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• 한국세라믹학회지
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• 제46권5호
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• pp.505-509
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• 2009

In this study, bulk nano-crystalline $Si_3N_4$ ceramics were fabricated by spark plasma sintering (SPS) and their mechanical properties, in particular wear, were investigated. A wide range of grain sizes, from 80 nm and 250 nm were obtained by varying sintering conditions ($1550^{\circ}C$-5 min to $1650^{\circ}C$-20 min). The elastic modulus of obtained ceramics was ${\sim}250$ GPa and hardness was in the range of $13{\sim}14$ GPa. The indentation fracture toughness increased from $2.58MPa{\cdot}m^{1/2}$ to $3.24MPa{\cdot}m^{1/2}$ with increasing sintering temperature possibly due to the elongated grains. Sliding wear tests revealed at least an order magnitude improvement in wear resistance with grain refinement. Microstructure analysis indicated that nano-$Si_3N_4$ specimens worn mainly through delamination and microcracking, while that of coarser specimens revealed severe wear with grain debonding and fracture.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.220-221
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• 2007

금속 촉매 성장 (Metal-induced growth) 를 이용하여, 마이크로 사이즈의 결정질 (Microcrystalline) 박막 실리콘 (Silicon, Si)을 성장하였다. 금속 촉매로서는 코발트, 니켈, 코발트/니켈 복합물질(Co, Ni, or Co/Ni) 이 사용되었으며, 실리콘과 반응하여 실리사이드 (Silicide) 층을 형성한다. 이러한 실리사이드 층은 실리콘과 격자 거리가 유사하여 (Little lattice mismatch), 그 위에 실리콘 박막을 성장하기 위한 모체 (Template) 가 된다. XRD (X-ray diffraction) 분석을 통하여, 실리사이드 ($CoSi_2$ or $NiSi_2$) 의 형성과 성장된 박막 실리콘의 결정성을 연구하였다. 이러한 박막을 이용하여, 쇼트키 태양전지 (Schottky Solar cell) 에 응용하였다. 코발트/니켈 복합물질을 이용하였을 경우에 10.6mA/$cm^2$ 단락전류를 얻었으며, 이는 코발트만을 이용한 경우보다 10 배만큼 증가하였다. 이러한 실리사이드를 매개로한 박막 실리콘의 성장은 공정상에서의 열부담 (Thermal budget) 을 줄일 수 있으며, 대면적 응용에 큰 가능성을 가지고 있다.

• 한국결정성장학회지
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• 제20권1호
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• pp.7-11
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• 2010

단결정 실리콘 태양전지의 광학적 손실을 감소시키는 표면 텍스쳐링은 최종 셀의 효율을 향상시키기 위하여 매우 중요하다. 본 연구에서는 2-step texturing의 공정으로 기존의 텍스쳐링에서 이루어진 피라미드에 수 많은 sub-micrometer 사이즈의 구조를 형성시켰다. $AgNO_3$ 용액으로 웨이퍼 표면에 Ag코팅을 한 후, 그 웨이퍼를 다시 HF/$H_2O_2$ 용액으로 수십초 동안 식각을 거치게 된다. 결과적으로, 피라미드 위에 생성된 수 nm사이즈의 구조물들은 $AgNO_3$의 농도 및 식각 시간의 변화에 의해 그 크기와 굵기가 변화하는 것을 알 수 있었다. 웨이퍼의 표면이 2-step texturing에 의해 식각이 이루어지면 연잎의 거친 표면과 비슷해지고, 그 결과 평균 10% 이상의 반사율을 보이던 기존 웨이퍼에서 3% 이하의 낮은 반사율을 얻을 수 있었다. 이는 일반적인 텍스쳐링과 anti-reflection coating을 거친 웨이퍼의 반사율보다 낮은 결과이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• Current Photovoltaic Research
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• 제5권3호
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• pp.83-88
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• 2017

The growth of intermetallic compounds is an important factor in the reliability of solar cells. Especially, the temperature change in the soldering process greatly affects the thickness of the intermetallic compound layer. In this study, we investigated the intermetallic compound growth by Sn-diffusion in solder joints of solar cells. The thickness of the intermetallic compound layer was analyzed by IR lamp power and hot plate temperature control, and the correlation between the intermetallic compound layer and the adhesive strength was confirmed by a $90^{\circ}$ peel test. In order to investigate the growth of the intermetallic compound layer during isothermal aging, the growth of the intermetallic compound layer was analyzed at $85^{\circ}C$ and 85% for 500 h. In addition, the activation energy of Sn was calculated. The diffusion coefficient of the intermetallic compound layer was simulated and compared with experimental results to predict the long-term reliability.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.35-38
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• 2014

Herein, we report on the preparation of red fluorescent Si nanoparticles stabilized with styrene. Nano-sized Si particles emit fluorescence under UV excitation, which could be used to open up new applications in the fields of optics and semi-conductor research. Unfortunately, conventional methods for the preparation of red fluorescent Si nanoparticles suffer from the lack of a fully-established standard synthesis protocol. A common initial approach during the preparation of semi-conductors is the etching of crystalline Si wafers in a HF/ethanol/$H_2O$ bath, which provides a uniformly-etched surface of nanopores amenable for further nano-sized modifications via tuning of various parameters. Subsequent sonication of the etched surface crumbles the pores on the wafer, resulting in the dispersion of particles into the solution. In this study, we use styrene to occupy these platforms to stabilize the surface. We determine that the liberated silicon particles in ethanol solution interact with styrene, resulting in the substitution of Si-H bonds with those of Si-C as determined via UV photo-catalysis. The synthesized styrene-coated Si nanoparticles exhibit a stable, bright, red fluorescence under excitation with a 365 nm UV light, and yield approximately 100 mg per wafer with a synthesis time of 2 h. We believe this protocol could be further expanded as a cost-effective and high-throughput standard method in the preparation of red fluorescent Si nanoparticles.