• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.199-205
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• 2010

The crystallization speed (v) of amorphous (InTe)$_x$(GeTe) (x = 0.1, 0.3 and 0.5) films and their thermal, optical and electrical behaviors have been investigated using nano-pulse scanner (wavelength = 658 nm, laser beam diameter < 2 ${\mu}m$), X-ray diffraction (XRD), 4-point probe and UV-vis-IR spectrophotometer. These results were compared with those of $Ge_2Sb_2Te_5$ (GST) film, comprehensively utilized for phase-change random access memory (PRAM). Both v-value and thermal stability of (InTe)$_{0.1}$(GeTe) and (InTe)$_{0.3}$(GeTe) films could be enhanced in comparison with those of the GST. Contrarily, the v-value in the (InTe)$_{0.5}$(GeTe) film was so drastically deteriorated that we could not quantitatively evaluate it. This deterioration is thought because amorphous (InTe)$_{0.5}$(GeTe) film has relatively high reflectance, resulting in too low absorption to cause the crystallization. Conclusively, it could be thought that a proper compositional (InTe)$_x$(GeTe) films (e.g., x < 0.3) may be good candidates with both high crystallization speed and thermal stability for PRAM application.

• Journal of the Korean institute of surface engineering
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• v.40 no.1
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• pp.16-22
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• 2007

Recently, mesoporous metallic materials are becoming more and more important in various applications like catalysts, electrochemical detectors, batteries, and fuel cells because of their high surface area. Among the various methods for manufacturing mesoporous structure, surfactant templating method followed by electroplating has been tried in this study. A mesoporous metallic film was prepared by electrodeposition from electroplating solution mixed with surfactant template. Nonionic type lyotropic liquid crystalline surfactant, Brij56, and nickel acetate based solution were selected as a template material and electroplating solution, respectively. To determine the content of surfactant forming a hexagonal column structure, the phase diagram of electroplating solution and surfactant mixture has been exploited by polarized optical microscopy equipped with heating and cooling stage. Nickel films were electroplated on Cu foil by stepwise potential input method to alleviate the concentration polarization occurred during the electroplating process. TEM and XRD analyses were performed to characterize the size and shape of mesostructures in manufactured nickel films, and electrochemical characterization was also carried out using cyclic voltammetry.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.50-59
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• 2010

In this paper, two kind of free-form progressive addition lenses (PALs) were designed with Zernike polynomial surface and anatomically accurate finite presbyopic schematic eyes which have aspheric cornea, aspheric GRIN crystalline lens, aspheric retina, and Gaussian apodization factor. Geometrical and diffraction MTFs were used for the optimization process in sequence. 5th orders of Zernike polynomials were used for the evaluation of progression zones of the two examples. The target MTF was set as 0.22 at 100 lp/mm which satisfies the standard visual resolution. These examples were fabricated with a CNC diamond turning machine controlled by slow tool servo (STS). After polishing process, the wavefront aberrations were measured with a laser interferometer on the ten test points across the progression zones and then compared with three current commercially available PALs on the optical performance. Astigmatic aberrations of the examples are very lower than the three selected PALs and have more increased stabilized progressive intermediate zones and near zones. It is expected to give better clear and comfortable distance, intermediate and near visions than other conventional PALs and to improve the adaptability of presbyopic patients to PALs.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.797-801
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• 2001

In this study, the solution combustion method was employed to synthesize stoichiometric mullite, and hence the attrition process was employed to prepare ultrafine mullite particles with nano size. The thermal decomposition behavior and partial pressure of equilibrium species of both oxidizer and fuel were considered during solution combustion process. The synthesized product was mullite phase with 40 nm crystalline size, and the alumina contents of the product by TEM/EDS quantity analysis was 3.12$\pm$04 mole. The result showed that the synthesized mullite was almost close to the it's stoichiometric composition. For attrition process, the dispersion behavior of the mullite suspension was controlled and was comminuted with the condition of 800 rpm for 4 hours using 0.3 mm zirconia ball media. As a result of comminution, the mean particle size was 80 nm.

• Journal of Powder Materials
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• v.12 no.1
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• pp.51-55
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• 2005

$Cu_2O$ nano cubes with high catalase activity were synthesized by reduction of freshly prepared Cu in distilled water at $40^{\circC}$ and their catalase activities of $H_2O_2$ were studied. Transmission electron microscopy (TEM) observation showed that most of these nanocubes were uniform in size, with the average edge length of 30 nm. Selected area electron diffraction of TEM revealed that the nanocube consisted of single crystalline $Cu_2O$, but it changed to CuO phase. The catalase activity depends on the amount of both cuprite phase and surface area.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.460-464
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• 2017

As increasing thermal efficiency of the gas turbine, the performance improvement of thermal barrier coatings is also becoming important. Ytrria stabilized zirconia(YSZ) is the most popular materials for ceramic top coating because of its low thermal conductivity. In order to enhance the performance of thermal barrier coatings for hot sections in the gas turbine, suspension plasma spraying was developed in order to feed nano-sized powders. YSZ coatings formed by suspension plasma spraying showed better performance than YSZ coatings due to its exclusive microstructure. In this research, two YSZ coatings were deposited by suspension vacuum plasma spraying at 400 mbar and 250 mbar. Microstructures of YSZ coatings were analyzed by scanning electron image(SEM) on each spraying conditions, respectively. Crystalline structure transformation was not detected by X-ray diffraction. Thermal conductivity of suspension vacuum plasma sprayed YSZ coatings were measured by laser flash analysis. Thermal conductivity of suspension vacuum plasma sprayed YSZ coatings containing horizontally oriented nano-sized pores and vertical cracks showed $0.6-1.0W/m{\cdot}K$, similar to thermal conductivity of YSZ coatings formed by atmospheric plasma spraying.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.440-441
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• 2007

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.922-925
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• 2012

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.