• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.9 no.1
• /
• pp.16-22
• /
• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Korean Journal of Materials Research
• /
• v.15 no.12
• /
• pp.796-801
• /
• 2005

In order to reduce the weight of glass in architecture, automobile, bottles, displays, a new technique that can strengthen glass was developed using various method. Generally, the strength achieved of glass-ceramics is higher as is 1.he fracture toughness by the formation of a crystalline phase inside glass. In this study, $70SiO_2-20Na_2O-10CaO-10TiO_2$ glasses were irradiated to strengthen by heterogeneous phase using femto-second laser pulse. Laser pulse irradiation of samples was analyzed by DTA, TMA, XRD, nano-indenter and SEM. Samples irradiated by laser had lower value$(3\~4\times10^{-3}Pa)$ of nano indentation which related with mother glass$(8\times10-3Pa)$ than values. Microcracks were occurred around laser irradiation area when femtosecond laser with the repetition rate of 1kHz was used as the light source to induced heterogeneous phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.341-345
• /
• 2001

In this study, nano-sized powders of SiO$_2$-0∼15mo1%B$_2$O$_3$ composition were prepared by sol-gel processing method using TEOS(Tetra ethyl ortho silicate) and H$_3$BO$_3$ solution. The powders were tape-cast on High silicate glass sheet(HSG) substrate and sintered to form a layer of undercladding for the planar light wave module. During the sol-gel processing, H$_2$O/Si mole ratio were varied to modify the size of the powders in a range from 600 to 75nm. The dispersion of the powder was modified by changing the pH of the slurry. Sintering temperature of the tape was observed to decrease with the size of the powder and the B$_2$O$_3$ content in the powder. When the silica powders of 75∼125nm in diameter containing 15mo1% B$_2$O$_3$ were used, 98 TD% was obtained at 1250$^{\circ}C$, which is approximately 300$^{\circ}C$ reduction in sintering temperature compared with micrometer-sized powders.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.5
• /
• pp.258-261
• /
• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Journal of Surface Science and Engineering
• /
• v.35 no.3
• /
• pp.133-140
• /
• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Journal of the Korean Ceramic Society
• /
• v.34 no.4
• /
• pp.436-442
• /
• 1997

The bimodal distribution of CuCl nano-crystals precipitated in alumino-borosilicate glass matrix (30SiO2-45B2O3-7.5Al2O3-7.5Na2O-7.5CaO-2.5GeO2(mole %)) was investigated by TEM and the temperature dependent optical spectroscopy. Two types of CuCl particles with different size were observed by TEM and it was confirmed by the splitting of Z3 absorption peak at low temperature and the occurrence of deflection point in the optical spectra with temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.297-297
• /
• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2003.12a
• /
• pp.130-135
• /
• 2003

Low dielectric constant SiOC(-H) films have been prepared by inductively coupled plasma chemical vapor deposition using bis-trymethylsilyl-methane (BTMSM) and $O_2$ precursors. The annealing effects on the structural and electrical properties were studied. The results indicate post-annealing could efficiently remove the hydroxyl (-OH) related groups from the as-deposited films and cause the chemical structure re-arrangement, resulting in the more nano-pores being formed in the annealed SiOC(-H) films. The dielectric constant decreased from 2.7 to 2.1, and the refractive index decreased from 1.427 to 1.32.

• Journal of Surface Science and Engineering
• /
• v.55 no.3
• /
• pp.143-155
• /
• 2022

Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na₂SiO₃, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al₂Cu phases whereas Al₂Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al₂O₃ and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.

• Journal of the Microelectronics and Packaging Society
• /
• v.27 no.1
• /
• pp.17-24
• /
• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.