• Korean Journal of Materials Research
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• v.34 no.7
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• pp.370-376
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• 2024

In this study, we report significant improvements in lithium-ion battery anodes cost and performance, by fabricating nano porous silicon (Si) particles from Si wafer sludge using the metal-assisted chemical etching (MACE) process. To solve the problem of volume expansion of Si during alloying/de-alloying with lithium ions, a layer was formed through nitric acid treatment, and Ag particles were removed at the same time. This layer acts as a core-shell structure that suppresses Si volume expansion. Additionally, the specific surface area of Si increased by controlling the etching time, which corresponds to the volume expansion of Si, showing a synergistic effect with the core-shell. This development not only contributes to the development of high-capacity anode materials, but also highlights the possibility of reducing manufacturing costs by utilizing waste Si wafer sludge. In addition, this method enhances the capacity retention rate of lithium-ion batteries by up to 38 %, marking a significant step forward in performance improvements.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Journal of Powder Materials
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• v.8 no.3
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• pp.179-185
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• 2001

Through the observation of wear scar of two ceramic materials, microstructural wear mechanisms was investigated. As for the $Al_2O_3$-5 vol% SiC nanocomposite, the grain boundary fracture was suppressed by the presence of SiC nano-particles. The intragranular SiC particles have inhibited the extension of plastic deformation through the whole grain. Part of plastic deformation was accommodated around SiC particles, which made a cavity at the interface between SiC and matrix alumina. On the other hand, gas-pressure sintered silicon nitride showed extensive grain boundary fracture due to the thermal fatigue. The lamination of wear scar was initiated by the dissolution of grain boundary phase. These two extreme cases showed the importance of microstructures in wear behavior.

• Journal of Surface Science and Engineering
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• v.44 no.4
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• Journal of Institute of Convergence Technology
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• v.8 no.1
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• pp.21-25
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• 2018

We developed nano-porous $TiO_2-SiO_2$ composites (commercial name : PTI, porous titania insulator) with low thermal conductivity as thermal insulating material as well as function of photocatalyst. The objectives of this paper are, firstly, to evaluate of the thermal conductivity of the PTI powder in the temperature range from -160 to $250^{\circ}C$, secondly to evaluate of thermal conductivities of insulation materials that is applied PTI powder. The structure of the PTI powder that has the pores size of 20-30 nm and the particle diameter of 2-10 nm. The PTI had a high surface area of $400m^2/g$ and a mean pore size of $45{\AA}$, which was fairly uniform. The thermal conductivity was measured by GHP(guarded hot plate) method and HFM(heat flux method). The PTI structure is a three-dimensional network nano-structures composed by a pearl-necklace that involved a precious stone in the center of the necklace. The thermal conductivities of PTI-PX powder by the GHP and HFM were 0.0366 W/m.K, 0.0314 W/m.K at $20^{\circ}C$, respectively. This is similar to values that are proportional to the square of the absolute temperature of the thermal conductivity of static air. The thermal conductivities of insulating sheets coated with PTI powder were similar results with that of the PTI powder.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.43-48
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• 2017

In this study, we investigate the effect of additive size on the densification and thermal conductivity of AlN ceramics with $MgO-CaO-Al_2O_3-SiO_2$ (MCAS) additives. Micro-sized MCAS powder prepared via melting and nano-sized MCAS powder synthesized via the polymeric complex method are used as sintering additives. We analyze the densification behavior of AlN added with 5 wt.% of MCAS by dilatometry as well as by isothermal sintering in the temperature range of $1300{\sim}1700^{\circ}C$. AlN exhibits higher sinterability with nano-MCAS than with micro-MCAS, and both specimens approach their maximum densities when sintered at $1600^{\circ}C$ for 4 h. The thermal conductivities of AlN with 5 wt% of nano- and micro-MCAS additives sintered at $1600^{\circ}C$ are 82.6 and 32.0 W/mK, respectively. We find that nano-MCAS is more effective in sintering of AlN ceramics at lower temperatures, and thus for enhancing their thermal conductivities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.397-398
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• 2009

In oder to investigate of partial discharge of nano-composites materials, we have studied partial discharge appling voltage from 5 to 30 [kV] to make an artificial defect with the epoxy adding to 0, 0.4, 0.8, and 1.6 [wt%], respectively. The experimental result, we have found that $SiO_2$ of 0.4 (wt%] was superior to others also, it is found that the effect of isolate diagnosis to get the slope for the discharged electric charge distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.84-84
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• 2010

Nano particles (10nm SiO2) were silane-treated in order to modify the surface characteristics in a epoxy nanocomposite. Then. micro particles ($3{\mu}m$ SiO2) were poured into the epoxy nanocomposite using various mixing process and epoxy/ micro-and-nano- mixed composites (EMNC) were prepared. The thermal (Tg) and mechanical (tensile and flexural strength) properties were measured by DMA and UTM and the data was estimated by Weibull plot.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.130-132
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• 2005

Tungsten carbon nitride (W-C-N) thin films were produced by reactive radio frequency (RF) magnetron sputter-ing of tungsten in $Ar-N_2$ gas mixture. The effects of the variation of nitrogen partial pressure on the composition, and structural properties of these films as well as the influence of post-deposition annealing have been studied. When $La_{0.67}Sr_{0.33}MnO_3$ was coated on the W-C-N/Si substrate, coercivity ($H_c$) and magnetization at room temperature shows 58.73 Oe, and 29.4 emu/cc, respectively. In order to improve the diffusion barrier characteristics, we have studied the impurity behaviors to control the ratios of nitrogen and carbon concentrations.