• Title/Summary/Keyword: n-type OTFT

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특집: 유기광.전자 소재 및 소자 기술 - 양극성 유기 박막 트랜지스터

  • Jo, Sin-Uk;Im, Dong-Chan
    • 기계와재료
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    • v.23 no.2
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    • pp.36-47
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    • 2011
  • 반도체적 성질을 가지는 유기 전자 재료를 활성층으로 활용한 유기 박막 트랜지스터(OTFT)는 제작 공정이 간단하고 비용이 저렴하다는 장점과 더불어 유기 반도체 자체가 가지는 가공성, 유연성 등으로 인해 유연한(flexible) 전자기기를 구현 할 수 있다는 가능성으로 미래형 전자기기의 핵심 구동 소자로서 많은 관심을 받고 있다. 특히 한 소자에서 p-type과 n-type이 동시에 구현되는 양극성(abipolar) OTFT는 구동 회로의 설계 및 제작 공정을 단순화 시키고 다양한 가능을 부가 시킬 수 있어 좀 더 경량화, 소형화된 미래형 전자 기기를 구현 할 수 있도록 해준다. 본 논문에서는 이러한 ambipolar OTFT의 구조 및 구동 원리를 알아보고 소자에 사용되는 유기 반도체 소재와 소자 구현 기술에 대하여 살펴보고자 한다.

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Characteristics of perylene OTFT fabricated in UHV (초고진공환경에서 제작된 perylene 박막 트랜지스터의 특성)

  • 박대식;강성준;김희중;노명근;황정남
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.9-13
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    • 2004
  • Perylene is an interesting material known to have P-type and N-type characteristics at the same time. We prepared perylene thin-films in ultrahigh vacuum with two different deposition rates of 0.1 $\AA$/s and 1.0 $\AA$/s in order to study the dependence of film characteristics on the growth condition. The smaller average grain size with larger surface coverage as well as the better crystallinity were observed on the perylene film prepared under 1.0 $\AA$/s deposition rate in x-ray diffraction (XRD) and atomic force microscopy (AFM) study. For studying electrical property of the film, perylene organic thin-film transistor (OTFT) with gold contacts was fabricated on $SiO_2$/Si surface in UHV condition. The prepared perylene OTFT device shows P-type characteristic. The obtained hole mobility in the current-voltage characteristic curve was$2.23\times10^{-5}\textrm{cm}^2$/Vs.

Enhanced Performance of Solution-Processed n-channel Organic Thin Film Transistor with Electron-Donating Injection Layer

  • Kim, Sung-Hoon;Lee, Sun-Hee;Han, Seung-Hoon;Choi, Min-Hee;Jeong, Yong-Bin;Jang, Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.64-66
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    • 2009
  • We obtained high performance of n-type organic thin film transistors (OTFTs) using a solution process. N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-$8CN_2$) in ambient air. Low work function interlayer on source/drain is needed to enhance the electron injection to low LUMO level of n-type organic semiconductor. By using self-assembled monolayer (SAM) the field-effect mobility of 0.33 $cm^2$/Vs was achieved.

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Performances of $C_{60}$ based n-type Organic Thin Film Transistor with A Doped Interlayer Using Bathophenanthroline (Bathophenanthroline를 interlayer로 적용한 $C_{60}$ 기반의 n형 유기박막트랜지스터의 성능)

  • Kim, Jeong-Su;Son, Hee-Geon;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.8
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    • pp.7-12
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    • 2010
  • In this paper, $C_{60}$ based Organic thin film transistor OTFTs) have been fabricated using BPhen(Bathophenanthroline) and BPhen doped with Cs interlayers between $C_{60}$ active layer and Al electrodes to improve the electrical performance. The addition of the BPhen layer resulted in enhanced performances by reducing surface roughness between organic-metal interface. And the contact resistance was reduced by using the BPhen doped with Cs interlayer with co-evaporation method. These performances suggests that the $C_{60}$ based OTFT with BPhen doped with Cs interlayer is a promising application in the fabrication of n-type organic transistors.

Organic complementary inverter and ring oscillator on a flexible substrate

  • Kim, Min-Gyu;Cho, Hyun-Duck;Kwak, Jeong-Hun;Kang, Chan-Mo;Park, Myeong-Jin;Lee, Chang-Hee
    • Journal of Information Display
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    • v.12 no.1
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    • pp.1-4
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    • 2011
  • A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

Characteristics and Fabrication of Vertical Type Organic Light Emitting Transistors Using n-Type Organic Materials (N형 유기물질을 이용한 세로형 유기 발광트랜지스터의 제작 및 특성에 관한 연구)

  • Oh Se-Young;Kim Hee-Jeong;Jang Kyoung-Mi
    • Polymer(Korea)
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    • v.30 no.3
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    • pp.253-258
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    • 2006
  • We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

Synthesis and Characterization of a New p-type Amorphous Conjugated copolymer for Solution Process OTFT Material

  • Ju, Jin-Uk;Kang, Peng Tao;Chung, Dae-Sung;Kim, Yun-Hi;Park, Chan-Eon;Kwon, Soon-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.844-846
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    • 2008
  • A new p-type conjugated copolymer, poly(9,10-diethynylanthracene-alt-9,9-didodecylfluorene (PDADF) was synthesized through a Sonogashira coupling reaction. A solution-processed thin film transistor device showed a carrier mobility value of $6.0\;{\times}\;10^{-4}\;cm^2/Vs$ with a threshold voltage of -17 V and a capacitance ($C_i$) of $10\;nF/cm^2$.

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High performance inkjet printed polymer CMOS integrated circuits

  • Baeg, Kang-Jun;Kim, Dong-Yu;Koo, Jae-Bon;Jung, Soon-Won;You, In-Kyu;Noh, Yong-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.67-70
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    • 2009
  • Printed electronics are emerging technology to realize various microelectronic devices via a cost-effective method. Here we introduce high performance inkjet printed polymer field-effect transistors and application to complementary integrated circuits with p-type and n-type conjugated polymers. The performance of devices highly depends on the selection of dielectrics, printing condition and device architecture. The device optimization and performances of various integrated circuits, e.g., complementary inverters and ring oscillators will be mainly discussed in this talk.

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Investigation of Solvent Effect on the Electrical Properties of Triisopropylsilylethynyl(TIPS) Pentacene Organic Thin-film Transistors (용제에 따른 TIPS(triisopropylsilyl) Pentacene을 이용한 유기박막 트렌지스터의 전기적 특성에 관한 연구)

  • Kim, K.S.;Kim, Y.H.;Han, J.-In;Choi, K.N.;Kwak, S.K.;Kim, D.S.;Chung, K.S.
    • Journal of the Korean Vacuum Society
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    • v.17 no.5
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    • pp.435-441
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    • 2008
  • In this paper, we investigated the electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. We spin coated TIPS pentacene by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. Fabricated OTFT with chlorobenzene shows field-effect mobility of $1.0{\times}10^{-2}cm^2/V{\cdot}s$, on/off ratio of $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $5.8{\times}10^{-7}cm^2/V{\cdot}s$, on/off ratio of $1.1{\times}10^2$ and threshold voltage of 1.7 V. Moreover we measured the grain size of each TIPS pentacene solvent by atomic force microscopy (AFM). From these results, it can be concluded that a solvent with higher boiling point results in better electrical characteristics due to large grain size and high crystallinity of TIPS pentacene layer. In this paper TIPS pentacene with chlorobenzene shows the best electrical properties.

Synthesis and Characterization of Perylene-based Pyrrolopyrone Derivative for Organic Thin Film Transistor

  • Kim, Hyung-Sun;Jung, Sung-Ouk;Kim, Yun-Hi;Do, Lee-Mi;Kwon, Soon-Ki
    • Journal of Information Display
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    • v.6 no.4
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    • pp.1-5
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    • 2005
  • Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.