• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.251-254
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• 2002

The technique of high speed machining is widely studied in machining field. In this study, TiAIN single-layered and TiAIN/TiN double-layered coatings were applied to end-mill by an arc ion plating technique. Their performances were comparatively studied about cutting force, tool wear, tool life and surface roughness of workpiece under high speed cutting conditions. The TiAIN single-layer coated tool showed higher wear-resistance due to its higher hardness, while the TiAIN/TiN double-layer coated tool showed better performance for high metal removal, i.e., high fled per tooth condition due to its higher toughness. The surface roughness of the workpiece was not influenced by the wear amount of coated tools.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.364-366
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• 1995

We investigated the Electromigration characteristics in Cu alloyed Al line and the effect of Ti/TiN barrier layer on the characteristics. Test structures were fabricated by wafer level and 50% failure times were tested in the condition of j= 2 MA/$cm^3$, T= 300$^{\circ}C$. The reliability of Al line was improved which was 0.5%Cu Alloyed, but Ti/TiN under layer deteriorated the reliability while TiN over layer improved the characteristics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.102.2-102.2
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• 2012

Different layers of zirconium nitride (ZrN) and hydroxyapatite (HA) coatings were prepared on cp Ti substrate for biomedical applications. The main idea is to improve the mechanical strength as well as the biocompatibility of the coating. ZrN is known for its high mechanical strength, corrosion resistance. HA is well known for its biocompatibility properties. Hence, in this study, both materials were coated on a cp Ti substrate with bottom layer with ZrN for good bonding with substrate and the top layer with HA for induce bioactivity. Middle layer was formed by a composite of HA and ZrN. Detail analyses of the layered coatings for its structural, morphological, topographical properties were carried out. Then the mechanical property of the layered coatings was analyzed by nanoindentation. Biomimetic growths of apatite on the functionally graded coatings were determined by simulated body fluid method. This study provides promising results to use this kind of coatings in biomedical field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.775-779
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• 2006

In this study, sputtered $Al_2O_3$ thin films were evaluated as a passivation layer in the process of InGaN-based blue LEDs in order to improve the brightness of LED lamps. In terms of packaged LED lamps, lamps with $Al_2O_3$ passivation layer emanated higher brightness than those with $SiO_2$ passivation layer, and LED lamps with 90 nm $Al_2O_3$ passivation layer were the brightest among four kinds of lamps. Although lamps with $Al_2O_3$ passivation had a slight increase in operating voltage, their brightness was improved about 13.6 % compare to the lamps made of conventional LEDs without the changes of emitting wavelength.

• ETRI Journal
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• v.35 no.4
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• pp.730-733
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• 2013

In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.101-101
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• 2007

We fabricated floating gate non-volatile memory devices with Si nanocrystals embedded in $SiN_x$ layer to achieve higher trap density. The average size of Si nanocrystals embedded in $SiN_x$ layer was ranging from 3 nm to 5 nm. The MOS capacitor and MOSFET devices with Si nanocrystals embedded in $SiN_x$ layer were analyzed the charging effects as a function of Si nanocrystals size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.12 no.1
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• pp.111-122
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• 2009

Abatements of TN and ${NO_3}^-$-N in a horizontal subsurface-flow wetland with litter layer on its surface were compared with those without one. The wetland was constructed in 2001 on floodplain of the Gwangju Stream which flows through Gwangju City in Korea. Its dimensions were 29m in length, 9m in width and 0.65m in depth. A bottom layer of 45cm was filled with crushed granites (15~40mm in diameter) and a middle layer of 10cm had pea pebbles. An upper layer of 5cm contained coarse sands. Reeds (Phragmites australis) growing in natural wetlands were transplanted on its surface. Water of the stream was channelled into the wetland by gravity flow and its effluent was discharged back into the stream. Average Litter layer of 12.2cm was formed on its surface in 2007. The layer and above-ground parts of reeds were eliminated in April 2008. Volumes and water quality of influent and effluent of the wetland were analyzed from May to November in 2007 and 2008, respectively. Inflow into the wetland both in 2007 and 2008 averaged approximately 40$m^3$/day and hydraulic residence time both in 2007 and 2008 was about 1.5days. Influent TN concentration in 2007 and 2008 averaged 3.96 and 3.89mg/L, respectively and average influent ${NO_3}^-$-N concentration in 2007 and 2008 was 2.11 and 2.05mg/L, respectively. With a 0.05 significance level, influent concentrations of TN and ${NO_3}^-$-N, temperatures and pH of effluent, and heights and stem numbers of reeds showed no difference between the wetland with litter layer and without one. TN retention in the wetland with litter layer and without one averaged 64,76 and 54.69%, respectively and ${NO_3}^-$-N removal averaged 60.83 and 50.61%, respectively. Both TN and ${NO_3}^-$-N abatement rates in the wetland with litter layer were significantly high (TN abatement: p<0,001, ${NO_3}^-$-N abatement: p=0.001) when compared with those without one. The subsurface-flow wetland having litter layer on its surface was more efficient for TN and ${NO_3}^-$-N removal.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.86-86
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• 1993

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.173-176
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• 2003

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using static spin-casting method. Two device structures were made; one is ITO/TPD/Alq3/Al as a reference and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured with a variation of spin-casting speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.