• Advances in materials Research
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• v.13 no.3
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• pp.211-220
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• 2024

Polylactic acid or polylactide (PLA) is a biodegradable thermoplastic that can be produced from renewable material to create various components for industrial purposes. In 3D printing technology, PLA is used due to its good mechanical, electrical, printing properties, environmentally friendly and non-toxic properties. However, the physical properties and excellent electrical insulation properties of PLA have limited its application. In this study, with the carbon black (CB) as filler added into PLA, the lattice spacing and morphology were investigated by using X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The physical properties of PLA-carbon composite were evaluated by using tensile test, shore D hardness test and density and voids measurement. Impedance test was conducted to investigate the electrical properties of PLA-Carbon composites. The results demonstrate that the inclusion of carbon black as filler enhances the physical properties of the PLA-carbon composites, including tensile properties, hardness, and density. The addition of carbon black also leads to improved electrical conductivity of the composites. Better enhancement toward the electrical properties of PLA-carbon composites is observed with 1wt% of carbon black in N774 grade. The N550 grade with 2wt% of carbon black shows better improvement in the physical properties of PLA-carbon composites, achieving 10.686 MPa in tensile testing, 43.330 in shore D hardness test, and a density of 1.200 g/cm3 in density measurement. The findings suggest that PLA-carbon composites have the potential for enhanced performance in various industrial applications, particularly in sectors requiring improved physical and electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.99-104
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• 2024

In the deficiency of an exact solution yielding algorithm, approximate algorithms remain as a solely viable option to the Minimum Linear Arrangement(MinLA) problem of Binary tree. Despite repeated attempts by a number of algorithm on k = 10, only two of them have been successful in yielding the optimal solution of 3,696. This paper therefore proposes an algorithm of O(n) complexity that delivers the exact solution to the binary tree. The proposed algorithm firstly employs an In-order search method by which n = 2^k - 1 number of nodes are assigned with a distinct number. Then it reassigns the number of all nodes that occur on level 2 ≤ 𝑙 ≤ k-2, (k = 5) and 2 ≤ 𝑙 ≤ k-3, (k = 6), including that of child of leaf node. When applied to k=5,6,7, the proposed algorithm has proven Chung[14]'s S^(k)_min=2^k-1+4+S^(k-1)_min+2S^(k-2)_min conjecture and obtained a superior result. Moreover, on the contrary to existing algorithms, the proposed algorithm illustrates a detailed assignment method. Capable of expeditiously obtaining the optimal solution for the binary tree of k > 10, the proposed algorithm could replace the existing approximate algorithms.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• Clean Technology
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• v.21 no.4
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• pp.248-256
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• 2015

MnO₂ was prepared by a hydrothermal process method in the range of 120-200 ℃ and 0.5-5 h, calcined at 300 ℃ after induction of precipitation using KMnO₄ and MnCl₂･4H₂O, and its catalytic activity was compared for CO oxidation. The catalysts were characterized using by X-ray diffraction, N₂-sorption, scanning electron microscopy, and temperature programmed reduction of H₂ or CO. The crystalline structure of pure α-MnO₂ or hybrid α/β-MnO₂ was controlled by the preparation conditions. The pure α-MnO₂ showed better catalytic activity and thermal stability than hybrid α/β-MnO₂. Especially, α-MnO₂ prepared at 150 ℃ for 1 h has the highest specific surface area 214 m² g^-1, reducibility and labile lattice oxygen species analyzed by H₂, CO-TPR, respectively. It also showed the best CO oxidation activity in both conditions of temperature programmed and isothermal reaction. The results came from the physicochemical properties of catalysts like the crystalline structure, specific surface area, reducibility and lattice oxygen species, and which are correlated with catalytic performance.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.59-66
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• 2013

Opal glass samples having different chemical compositions were synthesized and transparent glass was obtained after melting. The effects of $TiO_2$, $BaF_2$, and $CeO_2$ content on the color of the opal glass were studied by observing images of the opal samples and analyzing the results via ultraviolet visible spectroscopy and color spectrometry. The aesthetic properties of the opal glass were determined by studying the transmittance of visible light in the 400 nm to 700 nm range. The basic chemical composition of opal glass was $SiO_2$ 52.9 wt%, $Al_2O_3$ 12.35 wt%, $Na_2CO_3$ 15.08 wt%, $K_2CO_3$ 10.35 wt%, $Ca_3(PO)_4$ 4.41 wt%, $MgCO_3$ 1.844 wt%, $LiCO_3$ 2.184 wt%, and $TiO_2$ 0.882 wt%. The glass samples were prepared by varying the weight percentage of $TiO_2$, $BaF_2$, and $CeO_2$. The transmittance of visible light was decreased from 95 % to 75 % in the glass samples in which $TiO_2$ content was increased from 0 to 3.882 wt%. In the blue spectrum region, as the content of $TiO_2$ increased, the reflectance value was observed to become higher. This implies that $TiO_2$ content induces more crystal formation and has an important effect on the optical properties of the glass. The opalescence of opal samples that contained $CeO_2$ or $BaF_2$ is stronger than that in the samples containing $TiO_2$. Opal glass samples comprising $TiO_2$ had tetragonal lattice structures; samples including $CeO_2$ as an additive had cubic lattice structures (FCC, $CeO_2$).

• Journal of the Korean Chemical Society
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• v.32 no.3
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• pp.171-178
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• 1988

The potential energy of adsorbate molecules in the main channel of $K^+$ ion exchanged zeolite L(K-L) was calculated. In K-L which adsorbs three molecules per unit cell, the interaction energies of $H_2O,\;NH_3,\;CH_3NH_2,\;(CH_3)_2NH,\;and\;(CH_3)_3N$ molecules with zeolite lattice are 61.11, 62.31, 65.68, 74.65, and 79.88kJ/mol, respectively. These values are less by 3.7∼12.6kJ/mol than $K^+$ ion affinities with adsorbing molecules. These results may be due to the facts that the electrostatic energies are reduced by the negative charge of the lattice oxygens. The distribution of adsorption sites of $NH_3$ and $CH_3NH_2$ in K-L was investigated by a technique of temperature programmed desorption. The experimental value of desorption energies of $NH_3$ and $CH_3NH_2$ on K-L are in good agreement with the theoritical values. It is concluded that the desorption of $NH_3$ and $CH_3NH_2$ on K-L is the first-order desorption with free readsorption.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.139-147
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• 1994

Orthophosphate crystals were grown by the hydrothermal method and the properties of grown crystals were investigated by means of X-ray diffraction. Vickers hardness tester, etc. The starting powders of $AIPO_4 and GaPO_4 $were prepared as a single phase by the solid state reaction of stoichiometric mixture of $AI_2O_3 or Ga_2O_3$ and $NH_4H_2PO_4$ and the subsequently by the hydrothermal treatment. The hydrothermal conditions for high growth rates of the orthophosphate crystals are as follows: $AlPO_4$ crystal; temperature ranges, between $170$~$200^{\circ}C$; temperatures difference, $15$~$20^{\circ}C;$, hydrothermal solvent, 4m HCl, $GaPO_4 crystal; temperature ranges, between $210 and 240^{\circ}C;$; temperature difference, $25$~$30^{\circ}C; $, hydrothermal solvent, 4m HCl. Morphologies of grown crystals tended to be bounded by (1010), (1011) and (0111) faces at low temperatures, and grew with well developed (0001) faces by increasing the growth temperature. On the other hand, the properties of orthophosphate crystals $(AlPO_4/GaPO_4)$ were as follows: lattice parameters (nm); a=0.494, c=1.094/a=0.490, c=1.105, density (gcm-3); 2.62/3.56, Vickers hardness (Nm^2); $1.02{\times}10^1^0/7.06{\times}10^9$, refractive indices; $ne=1.529{\pm}0.003, no=1.519{\pm}0.003/ne=1.611{\pm}0.006, no=1.599{\pm}0.006, birefringence; {\pm}0.01/{\pm}0.012$, dielectric constant (Fm-1); 6/7.