• 제목/요약/키워드: n-doped

검색결과 1,041건 처리시간 0.031초

얇은막 산화철 광반도성 전극의 제조와 그 특성 (PREPARATION AND CHARACTERIZATION ON THIN FILMS OF DOPED IRON OXIDE PHOTOSEMICONDUCTIVE ELECTRODES.)

  • 김일광;김윤근;박태영;박춘배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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    • pp.104-108
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    • 1993
  • Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

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Electrical Resistivity and NTC/PTC Transition Point of a Nitrogen-Doped SiC Igniter, and Their Correlation to Electrical Heating Properties

  • Jeon, Young-Sam;Shin, Hyun-Ho;Yoo, Dong-Joo;Yoon, Sang-Ok
    • 한국세라믹학회지
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    • 제49권1호
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    • pp.124-129
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    • 2012
  • An M-shaped SiC gas igniter was fabricated by a reaction sintering followed by nitrogen doping. The igniter showed both resistivity at room temperature and NTC to PTC transition temperature values that were lower than those of commercial igniters. It was deduced that the doped nitrogen reduces the electrical resistivity at room temperature, while, at high temperature, the doped nitrogen and a trace of $Si_3N_4$ phase work as scattering centers against electron transfer, resulting in a lowered NTC-to-PTC transition point (below $650^{\circ}C$). Such characteristics were correlated to the fast heating speed (as compared to the commercial models) and to the prevention of the high temperature overshooting of the nitrogen-doped SiC igniter.

탄소 및 탄소화합물이 도핑된 $MgB_2$ 초전도체의 볼밀링 효과 (Effect of Ball-Milling on the Superconducting Properties of C and C-Based Compound Doped $MgB_2$)

  • 안중호;장민규;오상준
    • Progress in Superconductivity
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    • 제10권1호
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    • pp.17-22
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    • 2008
  • We have examined the effect of ball-milling on the superconducting properties of $MgB_2$ doped with C. The ball-milling of pre-reacted $MgB_2$ powder was carried out in dry or wet state using C or diethylenetriamine ($C_{4}H_{13}N_3$) as additives. The diethylenetriamine, whose chemical formula contains no oxygen, was chosen to avoid an excess oxidation during doping. The superconducting transition temperature (Tc) of the ball-milled or doped $MgB_2$ powders was only slightly smaller than that of undoped $MgB_2$. The critical current density (Jc) of the highly ball-milled $MgB_2$ was higher than that of C-doped $MgB_2$. The addition of diethylenetriamine was detrimental to Jc, although Tc was almost unchanged.

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구형의 단분산 Alumina 및 Mg-doped Alumina의 합성과 소결에 관한 연구 (Preparation of Monodispersed, Sheperical Al2O3 and Mg-doped Al2O3 Powder and Sintering Characterization of These Powders)

  • 이중윤;부재필;최상흘
    • 한국세라믹학회지
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    • 제31권1호
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    • pp.1-10
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    • 1994
  • Monodispersed alumina and Mg-doped alumina fine particles were prepared by controlled hydrolysis of alkoxides. Aluminium alkoxide and magnesium alkoxide were dissolved into complex solvent which was composed of hydrophobic n-octanol and hydrophilic acetonitrile. Hydroxypropyl cellulose(HPC) was used as a dispersant for the alumina particles. The size of these prepared powders was approximately 0.3 ${\mu}{\textrm}{m}$. In the case of sintering above 100$0^{\circ}C$, most of these prepared powders were transformed to $\alpha$-alumina. The relative density of the sintered body of these prepared powders at 1$600^{\circ}C$ was 98%. The sintered body of the Mg-doped alumina powder had more uniform grain size than that of the undoped alumina podwer.

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Adsorption of nitrate onto nitrogen-doped activated carbon fibers prepared by chemical vapor deposition

  • Yoo, Pyunghwa;Amano, Yoshimasa;Machida, Motoi
    • Korean Journal of Chemical Engineering
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    • 제35권12호
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    • pp.2468-2473
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    • 2018
  • Nitrogen-doped activated carbon fibers (ACFs) were prepared by chemical vapor deposition using melamine powder and acetonitrile for introducing quaternary nitrogen on the commercial ACFs, subsequently heated at $950^{\circ}C$ and activated by steam. Adsorption experiments of nitrate in aqueous solution were also conducted to evaluate adsorption capacity of the prepared ACFs using ion chromatography. The amount of introduced nitrogen content and nitrogen species on activated carbon fibers was examined by CHN elemental analyzer and X-ray photoelectron spectroscopy, respectively. As a result, adsorption capacity of quaternary nitrogen-doped ACF (ST-ML-AN-ST) was 0.75 mmol/g, indicating ca. two-times higher than that of untreated ACF (0.38 mmol/g). According to the adsorption data, the Langmuir isotherm model was the best fit. The prepared samples were also regenerated using hydrochloric acid. After regeneration, the adsorption capacity of the nitrogen-doped ACF (ST-ML-AN-ST) showed ca. 80% on average, implying that a portion of nitrates was adsorbed on the prepared ACFs irreversibly.

Investigations of the Boron Diffusion Process for n-type Mono-Crystalline Silicon Substrates and Ni/Cu Plated Solar Cell Fabrication

  • Lee, Sunyong;Rehman, Atteq ur;Shin, Eun Gu;Lee, Soo Hong
    • Current Photovoltaic Research
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    • 제2권4호
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    • pp.147-151
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    • 2014
  • A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

B, C, N, F 원소 다중도핑된 TiO2의 가시광 광촉매 분해 반응 (Photo-catalytic Degradation on B-, C-, N-, and F Element co-doped TiO2 under Visible-light Irradiation)

  • 배병철;임지선;김종구;이영석
    • 공업화학
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    • 제21권1호
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    • pp.29-33
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    • 2010
  • 본 연구에서는 여러 가지 열처리 온도에서 다성분 도핑에 의한 광촉매의 밴드갭 저감 및 가시광 광분해 효과를 알아보고자 tetraethylammonium tetrafluoroborate (TEATFB)로 B, C, N, F 등이 동시에 도핑된 $TiO_{2}$ 광촉매를 제조하였다. 도핑된 $TiO_{2}$ 광촉매가 가시광선영역에서 분해되는 정도를 확인하기 위해서 태양광에 조사하여 rhodamine B와 acridine orange로 염료분해 실험을 수행하였다. XRD 결과 $800^{\circ}C$ 이하에서 열처리된 $TiO_{2}$ 광촉매는 anatase 구조가 존재하고 있음을 알 수 있었다. XPS 분석을 통하여 광활성에 영향을 미치는 B, C, N, F의 결합구조를 확인하였고 UV-DRS 결과로부터 다성분 도핑된 $TiO_{2}$ 광촉매의 밴드 갭이 2.98 eV로 줄어든 것을 알 수 있었다. 다성분 도핑 $TiO_{2}$의 태양광 조사에 의한 UV-Vis 결과에서 acridine orange에 대한 광분해 효과가 도핑되지 않은 샘플에 비해 1.61배 증가함을 알 수 있었다. 특히, 다성분이 동시 도핑되고 $700^{\circ}C$에서 열처리된 샘플이 acridine orange과 rhodamine B 두 가지 염료 모두에서 가장 좋은 광분해 효과를 보여 주었다.

레이저 침탄에서 페이스트 증착방식에 따른 TiZrN 코팅의 carbon solid solubility (Solid solubility of carbon in TiZrN coating by paste deposition methods for laser carburization)

  • 이성철;김성훈;김재영;김배연;이희수
    • 한국결정성장학회지
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    • 제30권1호
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    • pp.7-11
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    • 2020
  • TiZrN 코팅의 도핑 공정에서 탄소 페이스트 증착 방식에 따른 탄소의 용해성 변화를 격자왜곡(lattice distortion)과 원자농도(atomic concentration)를 통해 비교 및 고찰하였다. 딥코팅, 스핀코팅과 스크린프린팅 방식을 이용하여 탄소 페이스트를 도포한 후, 레이저를 조사하여 탄소 구배층(carbon gradient layer)을 형성시켰다. 모든 구배층은 탄소가 도핑되는 구조였으며, 두께 및 탄소 도핑량은 페이스트 도포 방식에 의존하였다. 결정 구조 분석 결과, 딥코팅에 의해 코팅층을 도핑할 때 보다 스핀코팅과 스크린프린팅에 의해 코팅층을 도핑하였을 때, 더 큰 격자 팽창이 일어남을 확인할 수 있었다. 또한 XPS depth profile을 통해 딥코팅에 의한 탄소 구배층 두께는 약 30 nm, 스핀코팅과 스크린프린팅의 경우 대략 100 nm로 더 깊은 구배층이 형성됨을 확인하였다. 침탄 전 코팅의 경도는 약 30 GPa였으며, 침탄 후에는 딥코팅 시편의 평균 경도가 약 31 GPa였고 스핀코팅과 스크린프린팅의 평균 경도는 대략 37 GPa로 증가한 것으로 보아 탄소 도핑을 통한 격자팽창 및 구배층의 영향을 확인하였다.

XPS를 이용한 Sb-doped $SnO_2$ 투명전도막의 특성 분석 (Characterization of transparent Sb-doped $SnO_2$ conducting films by XPS analysis)

  • 임태영;김창열;심광보;오근호
    • 한국결정성장학회지
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    • 제13권5호
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    • pp.254-259
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    • 2003
  • Sol-gel dip coating법으로 soda lime glass 기판 위에 ATO(antimony-doped tin oxide) 투명전도막을 제조할 때, 기판 위에 형성된 $SiO_2$ barrier 층 및 $N_2$ gas annealing 에 따른 광투과율 및 전기적 특성에 대한 효과를 정량적으로 측정하고, XPS(X-ray photoelectron spectroscopy) 분석을 통해 고찰하였다. $SiO_2$ barrier층을 갖는 glass 기판 위에 코팅된400 nm 두께의 ATO 박막을 질소분위기에서 annealing한 결과, 광 투과율은 84%그리고 전기저항은 약 $5.0\times 10^{-3}\Omega \textrm{cm}$로 측정되었다 XPS 분석결과 이러한 우수한 전기전도성은 $SiO_2$ buffer층이 glass 기판으로부터 Na 이온의 확산을 막아 ATO막 내에 $Na_2SnO_3$ 및 SnO와 같은 2차상 불순물의 형성을 억제하여 막 내부의 Sb의 농도 및 $Sb^{5+}/Sb^{3+}$ 비를 증가시키고, $N_2$ annealing은 $Sb^{5+}$ 도 환원시키지만 $Sn^{4+}$를 환원시키는 효과가 크게 작용하였기 때문으로 사료된다.

HVPE 방법에 의해 r-plane 사파이어 기판 위의 선택 성장된 GaN/AlGaN 이종 접합구조의 특성 (Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate)

  • 홍상현;전헌수;한영훈;김은주;이아름;김경화;황선령;하홍주;안형수;양민
    • 한국결정성장학회지
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    • 제19권1호
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    • pp.6-10
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    • 2009
  • 본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다.