• Particle and aerosol research
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• v.6 no.4
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• pp.165-172
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• 2010

Titania is widely used as an effective photocatalyst for the photodegradation of environmental pollutants in air. In this study, novel N-doped $ZrO_2/TiO_2$ photocatalysts were synthesized via sol-gel method and characterized by UV-Vis spectrophotometer, transmission electron microscope, and X-ray diffractometer. N-doped $ZrO_2/TiO_2$ photocatalysts were nano-sized with an average particle size of about 20 nm. The XRD pattern of N-doped $ZrO_2/TiO_2$ photocatalysts showed both anatase and rutile phases. The photocatalytic activity of N-doped $ZrO_2/TiO_2$ photocatalysts was evaluated by degradation of NO under UV and visible light irradiation at various parameters such as amount of photocatalyst, concentration of NO, and intensity of light. The photocatalytic activity of N-doped $ZrO_2/TiO_2$ photocatalysts was effective for the enhancement of the degradation of NO and higher than that of $TiO_2$ photocatlysts under UV and visible light irradiation.

• Journal of the Korean Chemical Society
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• v.57 no.4
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• pp.489-492
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• 2013

N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.691-693
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• 2007

We report on a highly conductive and stable hole transporting layer comprising of N,N'-di(1- naphthyl)-N,N'-diphenylbenzidine $({\alpha}\;-NPD)$ doped with molybdenum oxide $(MoO_3)$. Compared to the reference device, the device with $MoO_3-doped$ hole transporting material exhibits higher conductivity and thermal stability. The temperature dependence of the current-voltage characteristics are studied for various $(MoO_3)$ doping concentration.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.44-47
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• 2014

In this study, we investigated the basic properties of N-doped ethylcyclohexene plasma polymer thin films that deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition (PECVD) method with controlled ammonia flow rate. Ethylcyclohexene was used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia ($NH_3$) gas was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, UV-Visible spectroscopy, and water contact angle measurement. We found that with increasing plasma power, film thickness is gradually increased while optical transmittance is drastically decreased. However, under the same plasma condition, water contact angle is decreased with increasing $NH_3$ flow rate. The FT-IR spectra showed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.159-159
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• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.265-268
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• 1999

In this study, we investigated the electromagnetic Properties of M $n_{Y}$Z $n_{1-x}$ F $e_{x}$ $O_4$(X=0.67~0.69, Y=0.13~0.19) doped with and without H $o_2$ $O_3$(each of 0.05~ 0.2wt%, step 0.05wt%). The greatest initial permeability of composition is M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$. As X and Y components, increased. generally resistivity slightly change by the various X and Y components. The initial permeability of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped with H $o_2$ $O_3$ showed the about 2.5 times higher than that of M $n_{0.17}$Z $n_{0.16}$F $e_{0.67}$ $O_4$ doped without H $o_2$ $O_3$EX>EX>EX>X>>EX>EX>EX>X>

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.246-246
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• 2005

• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.221-224
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• 2012

The present paper reports the comparative optical behavior of a pure nematic mixture E-24 and its anthraquinone dye doped sample. The variation in the ordinary and extraordinary refractive index ($n_o$, $n_e$) of the pure and dye doped samples with temperature has been discussed and it has been found that doped sample have a less refractive index compared to the pure sample. The variation in the order parameter for pure and doped samples with temperature has been discussed and it has been seen that the doped sample has a higher order parameter; the possible reasons have been discussed. The variations in birefringence and optical transmittance have also been presented here.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.