• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.30-32
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• 1992

The apparent depth of space charge region on the ZnO $(10{\bar{1}}0)$ surface in chemisorption of oxygen has been estimated from the capacitance of two contacting faces. When the sample (donor concentration: $2.4{\times}10^{22}\;m^{-3}$) was evacuated at 773 K for 1 hr the depth reached to 40-100 ${\AA}$ depending on sample assembly. Admission of oxygen to the sample resulted in an increase of the depth to 3600 ${\AA}$ where the increment was greater at higher oxygen pressure between 6.6-1600 $N/m^2$. Admission of CO to the sample previously exposed to oxygen yields a decrease in the depth. The results of the measurement support that oxygen is adsorbed as an acceptor on ZnO $(10{\bar{1}}0)$.

• Journal of the Korean Magnetics Society
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• v.5 no.3
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• pp.197-202
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• 1995

고주파용 전원의 필요성이 대두되면서 고주파에서 낮은 자기손실을 가진 재료의 개발이 요구되고 있다. Mn-Zn 페라이트의 자기손실은 전기비저항의 증거나 소결시 미세구조의 제어로 줄일 수 있다. 본 연구에서는 연쇄고온합성법(Self-propagation High- temperature Synthesis)에 의해 제조된 $_Mn_{0.72}$Z $n_{0.22}$)$_{0.94}$ (F $e_{2}$ $O_{3}$)$_{1.06}$ 조성의 Mn-Zn페라이트에서 첨가물이 미세구조와 자기적 성질에 미치는 영향에 대해 조사하였다. $SiO_{2}$와 Ca $Co_{3}$의 복합첨가에 의해 미세구조의 미세화와 아울러 낮은 자기손실 특성을 얻을 수 있었다. 그러나 첨가 물의 과다 첨가시에는 비정상입자성장 조직이 나타났으며 자기적 성질이 현저히 저하 하였다. 전기비저항, 자기손실의 주파수 의존 결과에 근거하여 주된 자기손실기구 및 이에 미치는 첨가물 효과에 대해 논하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.289-293
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• 2013

We have studied structural, optical, and electrical properties of the Ga-doped ZnO (GZO) thin films being usable in transparent conducting oxides. The GZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of GZO for transparent conducting oxides, the Ar gas in sputtering process was varied as 40, 60, 80 and 100 sccm, respectively. As reaction gas decreased, the crystallinity of GZO thin film was increased, the optical bandgap of GZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in reaction gas. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with decreasing reaction gas. The structural, optical, and electrical properties of the GZO thin films were affected by Ga dopant content in GZO thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.461.1-461.1
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• 2014

본 연구진에서는 기존에 Ag2S 양자점을 흡광층으로 활용하여 양자점 감응형 태양전지(QDSC)를 제작, 그 성능과 특징을 분석하여 발표한 바 있다. 기존 연구에서 제작된 Ag2S QDSC는 11 mA/cm2의 비교적 높은 광전류와 260 mV의 비교적 낮은 전압으로 인해 1.2%의 광전환효율 성능을 나타내는 것으로 보고되었다. 추후 연구로 진행된 본 결과에서는, 기존에 Single absorber로 사용된 Ag2S의 한계를 보완하기 위해 CdS를 도입하여 co-sensitization을 활용하였다. CdS는 약 2.3 eV의 밴드갭 에너지를 갖는 물질로, 1.1 eV의 밴드갭을 갖는 Ag2S에 비해 흡광 영역은 좁지만 그만큼 전자-정공 재결합을 억제할 수 있는 장점을 가지고 있다. 또한, 전도층으로 사용한 n-type 물질인 ZnO 나노선과의 밴드구조가 매우 적합하게 조화되어, ZnO/CdS/Ag2S 순서로 이종구조를 접합시켰을 때 세 물질의 Conduction band level과 Valence band level이 순차적으로 연결되는 cascade-shaped 밴드구조를 이루게 된다. 빛을 받아 Ag2S와 CdS에서 생성된 전자는 이 cascade 모양의 conduction band를 따라 순차적으로 ZnO로 잘 전달되게 되어, 효율 향상에 큰 도움을 주었다. 이런 장점들로 인해, CdS-Ag2S co-sensitized QDSC는 Ag2S QDSC에 비해 2배나 향상된 효율인 2.4%를 기록하였으며, 이는 IPCE spectrum 측정 등으로 근거가 뒷받침되었다.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.131-135
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• 2020

Silver nanowire (AgNW) networks have been adopted as a front electrode in Cu(In,Ga)Se2 (CIGS) thin film solar cells due to their low cost and compatibility with the solution process. When an AgNW network is applied to a CIGS thin film solar cell, reflection loss can increase because the CdS layer, with a relatively high refractive index (n ~ 2.5 at 550 nm), is exposed to air. To resolve the issue, we apply solution-processed ZnO nanorods to the AgNW network as an anti-reflective coating. To obtain high performance of the optical and electrical properties of the ZnO nanorod and AgNW network composite, we optimize the process parameters - the spin coating of AgNWs and the concentration of zinc nitrate and hexamethylene tetramine (HMT - to fabricate ZnO nanorods. We verify that 10 mM of zinc nitrate and HMT show the lowest reflectance and 10% cell efficiency increase when applied to CIGS thin film solar cells.

• Journal of the Korean Chemical Society
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• v.52 no.1
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• pp.66-72
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• 2008

The photocatalytic degradation of a textile diazo dye in aqueous solution has been investigated under Solar and UV-A light. The effect of various parameters such as concentration of dye, amount of catalyst and pH on the degradation of dye has been studied. Addition of hydrogen peroxide, ammonium persulphate and isopropanol strongly influences the degradation rate. Kinetic analysis of photodegradation reveals that the degradation follows approximately pseudo first order kinetics according to the Langmuir-Hinshelwood model. Carbon dioxide, nitrate and sulphate ions have been identified as mineralisation products. The photocatalyst ZnO was found to be more efficient in UV-A light than in Solar light.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.355-359
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• 2013

In this paper, the $0.995(Li_{0.04}(Na_{0.56}K_{0.44})_{0.96}(Nb_{0.90}Ta_{0.10})_{0.998}Zn_{0.005}O_3+0.005KNbO_3+xwt%\;TeO_2$ lead-free piezoelectric ceramics for energy harvesting devices were fabricated by the conventional mixed oxide method. The microstructure, dielectric, and piezoelectric properties were investigated as a function of the $TeO_2$ addition. All the specimens showed an orthorhombic phase structure. At the composition ceramics doped with 0.1 wt%$TeO_2$, the optimum values of $d_{33}$= 212 pC/N, $d_{33}{\cdot}g_{33}=9.54pm^2/N$, and kp=0.448 were obtained, respectively. The results indicate that the composition ceramics is a promising candidate for energy harvesting devices applications.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.2
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• pp.112-115
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• 1999

The real ($\varepsilon$1) and imaginary ($\varepsilon$2) parts of the dielectric function of ZnS have been measured by spectroscopic ellipsometry (SE) in the 3.7-6.0 eV photon-energy range at room temperature. The obtained dielectric function spectra reveal distinct structures at energies E0/(E0+$\Delta$0) and E1 critical points. The spectrum after chemical treatment to remove surface oxide overlayer showed that these data seem to be the best representation of the dielectric function of ZnS, having the largest $\varepsilon$2 value at E1 peak region reported so far by SE. Dielectric-related optical constants of ZnS, such as the complex refractive indices (n+n=ik), absorption coefficient, and reflectance, are also presented.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.109-113
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• 2002

본 연구에서는 공침법에 의한 초미세분말을 이용하여 제조된 (NiCuZn)-ferrite와 건식법을 이용하여 제조된 (NiCuZn)-ferrite의 저온소결 특성 및 전자기적 특성을 상호 비교 분석하였다. 조성은 (N $i_{0.4-x}$C $u_{x}$Z $n_{0.6}$)$_{1+w}$(F $e_2$ $O_4$/)$_{1-w}$에서 x의 값을 0.2, w의 값은 0.03으로 고정하였고, 소결은 공침법으로 합성된 분말의 경우 초기열처리과정을 거쳐 최종적으로 90$0^{\circ}C$에서, 건식법의 경우 11$50^{\circ}C$의 온도에서 진행하였다. 그 결과, 공침법으로 제조된 (NiCuZn)-ferrite는 건식법으로 제조된 (NiCuZn)-ferrite보다 20$0^{\circ}C$이상 낮은 소결온도에서 높은 소결밀도 값을 가졌으며, 품질계수 등 칩 인덕터에서 중요한 요소인 전자기적 특성이 우수하게 나타났다. 또한, 공침법으로 합성된 페라이트는 분말의 초기열처리온도에 따라 최종소결 특성이 크게 변하였다. 그밖에 공침법과 건식법으로 합성한 (NiCuZn)-ferrite의 결정성, 미세구조들을 XRD, SEM, TEM을 이용하여 비교 고찰하였다.하였다.다.