• Title/Summary/Keyword: n-ZnO

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Dielectric and Piezoelectric Characteristics of Low Temperature Sintering 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 Ceramics with the Addition of Sintering Aid ZnO (소결조제 ZnO 첨가에 따른 저온소결 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 세라믹스의 유전 및 압전특성)

  • Yoo, Ju-Hyun;Lee, Yu-Hyong;Kim, Do-Hyung;Lee, Il-Ha;Kwon, Jun-Sik;Paik, Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.126-130
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    • 2008
  • In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

Fate and Bioaccumulation of Zinc Oxide Nanoparticles in a Microcosm (산화아연 나노물질의 미소생태계 내 거동 및 생물축적)

  • Kim, Eunjeong;Lee, Jae-woo;Jo, Eunhye;Sung, Hwa Kyung;Yoo, Sun Kyoung;Kim, Kyung-tae;Shin, Yu-jin;Kim, Ji-eun;Park, Sun-Young;Eom, Ig-chun;Kim, Pilje
    • Journal of Environmental Health Sciences
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    • v.43 no.3
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    • pp.194-201
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    • 2017
  • Objectives: Zinc oxide nanoparticles (ZnO NPs) are widely used in various commercial products, but they are exposed to the environment and can induce toxicity. In this study, we investigated the environmental fate and bioaccumulation of ZnO NPs in a microcosm. Methods: The microcosm was composed of water, soil (Lufa Soil 2.2) and organisms (Oryzias latipes, Neocaridina denticulata, Semisulcospira libertina). Point five and 5 mg/L of ZnO NPs were exposed in the microcosm for 14 days. Total Zn concentrations were measured using an Inductively Coupled Plasma Mass Spectrometer (ICP-MS) and intracellular NPs were observed using Transmission Electron Microscopy (TEM). Results: In the initial stages of exposure, the Zn concentrations in water increased in all exposure groups and then decreased, while the Zn concentration in soil increased after three hours for the 5 mg/L solution. Zn concentrations also showed increasing trends in N. denticulata and S. libertina at 0.5 and 5 mg/L, and in O. latipes at 5 mg/L. Accumulation of NPs was found in the livers of O. latipes and hepatopancreas of N. denticulata and S. libertina. Conclusions: In the early stages of exposure, ZnO NPs remained in the water, and then were transported to the soil and test species. Unlike other species, total Zn concentrations in N. denticulata and S. libertina increased for both 0.5 mg/L and 5 mg/L. Therefore, ZnO NPs were more easily accumulated in zoobenthos than in fish.

Charge trapping characteristics of the zinc oxide (ZnO) layer for metal-oxide semiconductor capacitor structure with room temperature

  • Pyo, Ju-Yeong;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.310-310
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    • 2016
  • 최근 NAND flash memory는 높은 집적성과 데이터의 비휘발성, 낮은 소비전력, 간단한 입, 출력 등의 장점들로 인해 핸드폰, MP3, USB 등의 휴대용 저장 장치 및 노트북 시장에서 많이 이용되어 왔다. 특히, 최근에는 smart watch, wearable device등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 유연하고 투명한 메모리 소자에 대한 연구가 다양하게 진행되고 있다. 대표적인 플래시 메모리 소자의 구조로 charge trapping type flash memory (CTF)가 있다. CTF 메모리 소자는 trap layer의 trap site를 이용하여 메모리 동작을 하는 소자이다. 하지만 작은 window의 크기, trap site의 열화로 인해 메모리 특성이 나빠지는 문제점 등이 있다. 따라서 최근, trap layer에 다양한 물질을 적용하여 CTF 소자의 문제점을 해결하고자 하는 연구들이 진행되고 있다. 특히, 산화물 반도체인 zinc oxide (ZnO)를 trap layer로 하는 CTF 메모리 소자가 최근 몇몇 보고 되었다. 산화물 반도체인 ZnO는 n-type 반도체이며, shallow와 deep trap site를 동시에 가지고 있는 독특한 물질이다. 이 특성으로 인해 메모리 소자의 programming 시에는 deep trap site에 charging이 일어나고, erasing 시에는 shallow trap site에 캐리어들이 쉽게 공급되면서 deep trap site에 갇혀있던 charge가 쉽게 de-trapped 된다는 장점을 가지고 있다. 따라서, 본 실험에서는 산화물 반도체인 ZnO를 trap layer로 하는 CTF 소자의 메모리 특성을 확인하기 위해 간단한 구조인 metal-oxide capacitor (MOSCAP)구조로 제작하여 메모리 특성을 평가하였다. 먼저, RCA cleaning 처리된 n-Si bulk 기판 위에 tunnel layer인 SiO2 5 nm를 rf sputter로 증착한 후 furnace 장비를 이용하여 forming gas annealing을 $450^{\circ}C$에서 실시하였다. 그 후 ZnO를 20 nm, SiO2를 30 nm rf sputter로 증착한 후, 상부전극을 E-beam evaporator 장비를 사용하여 Al 150 nm를 증착하였다. 제작된 소자의 신뢰성 및 내구성 평가를 위해 상온에서 retention과 endurance 측정을 진행하였다. 상온에서의 endurance 측정결과 1000 cycles에서 약 19.08%의 charge loss를 보였으며, Retention 측정결과, 10년 후 약 33.57%의 charge loss를 보여 좋은 메모리 특성을 가지는 것을 확인하였다. 본 실험 결과를 바탕으로, 차세대 메모리 시장에서 trap layer 물질로 산화물 반도체를 사용하는 CTF의 연구 및 계발, 활용가치가 높을 것으로 기대된다.

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Optically transparent and electrically conductive indium-tin-oxide nanowires for transparent photodetectors

  • Kim, Hyunki;Park, Wanghee;Ban, Dongkyun;Kim, Hong-Sik;Patel, Malkeshkumar;Yadav, Pankaj;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.390.2-390.2
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    • 2016
  • Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

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ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices (ITO 나노와이어 기반의 투명 산화물 반도체 광전소자)

  • Kim, Hyunki;Kim, Hong-Sik;Patel, Malkeshkumar;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.12
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    • pp.808-812
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    • 2015
  • Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

Growing and Luminous Characterization of ZnGa2O4:Mn Thin Film Deposited by RF Magnetron Sputtering (RF 스퍼터링 방법에 의한 ZnGa2O4:Mn 박막의 성장거동과 발광특성)

  • 정승묵;김영진
    • Journal of the Korean Ceramic Society
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    • v.40 no.7
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    • pp.652-656
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    • 2003
  • The green emitting phosphor, BnGa$_2$O$_4$:Mn thin films with spinel structure were deposited by rf magnetron sputtering at various Ar/O$_2$ ratios. Thin film phosphors were heat-treated in air and $N_2$+vacuum atmosphere, respectively. Effects of Ar/O$_2$ ratios and annealing conditions on the structural and photoluminescence (PL) and cathodeluminescence (CL) properties were investigated. Luminous properties were more improved by inhibiting the films from contacting with oxygen during heat treatment.

A Study on the Sintering Characteristics of Ni-Zn Ferrites with Additives (첨가율에 의한 Ni-Zn 페라이트의 소결특성에 관한 연구)

  • 강재덕;문현욱;정병두;소대화
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1990.10a
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    • pp.71-77
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    • 1990
  • This paper is studied on the sintering characteristics of Ni-Zn ferrites. The specimen ferrites was composed of 20 mol% NiO, 30mol% ZnO, 50 mol% Fe$_2$O$_3$, and 0.0025 mol%, 0.005 mol%, 0.01 mol% Nb$_2$O$\_$5/, Bi$_2$O$_3$, V$_2$O$\_$5/, wee used as minor additives. Sintering was carried out at 1100$^{\circ}C$. As results from the experiments, the high value of initial permeability of 6X10$^2$∼9X10$^2$ can be achieved at 500KHz∼1000KHz. The value of loss factor 1X10 ̄$^2$∼2X10$^2$ can be achieved at 500KHz∼1000KHz. The lowest 1/(${\mu}$XQ) value was obtained in the specimen with the addition of 0.005mol% fracyion for V$_2$O$\_$5/.

Cathodoluminescence properties of $Ga_2O_3$ and ZnO nanomaterials ($Ga_2O_3$와 ZnO 나노물질의 CL특성)

  • Lee, Jong-Soo;Kang, Myung-Il;Park, Il-Woo;Sung, Man-Young;Kim, Sang-Sig
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.97-98
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    • 2002
  • $Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

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EFFECT OF $Na_{2}O$ ADDITION ON MAGNETIC PROPERTIES OF $SrZn_{2}-W$ TYPE HEXAGONAL FERRITE

  • Yamamoto, Hiroshi;Fujii, Hiroshi;Mitsuoka, Takayuki
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.735-739
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    • 1995
  • An experiment was carried out to investigate the effect of $Na_{2}O$ additive on the magnetic and physical properties of $SrZn_{2}-W$ type hexagonal ferrite. The specimens were prepared by the conventional manufacturing methods without atmosphere control. It was found that the magnetic properties of SrO.2ZnO.$8Fe_{2}O_{3}$ are considerably improved on adding 1.5wt% $Na_{2}O$. Theoptimum condition of making magnet with suitable properties are as follows : chemical analysis composition : $Sr^{2+}_{0.852}Zn^{2+}_{1.721}Na^{+}_{0.301}Fe^{2+}_{0.723}Fe^{3+}_{15.703}O_{27}$ ; semisintering condition : $1300^{\circ}C\;{\times}\;1h$ in air ; sintering condition : $1250^{\circ}C\;{\times}\;0.5h\;T_{c}=371^{\circ}C,\;H_{A}=1091.5kA/m,\;K_{A}=2.13{\times}10^{5}J/m^{3}\;and\;n_{B}=31.8\mu\textrm{B}$.

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Preparation of ZnO Nano Powder and High-transparent UV Shielding Dispersion Sol (ZnO 나노분말 및 고투명성 자외선 차단 분산 졸의 제조)

  • Lee, Hun Dong;Kim, Jin Mo;Son, Dae Hee;Lee, Seung-Ho;Park, Seong Soo
    • Applied Chemistry for Engineering
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    • v.24 no.4
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    • pp.391-395
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    • 2013
  • In this study, zinc oxide (ZnO) nano powder, well known as an UV absorbing material, was synthesized with three synthetic conditions by the hydrothermal method. After ZnO nano powder was surface-modified with various silane coupling agents to improve dispersion property, a dispersion sol was prepared with dispersant for 72 h by the ball-milling of surface-modified ZnO nano powder. The dispersion sol, prepared by modifying the surface of the ZnO nano powder with an average size of about 30 nm using 3-chloropropyl trimethoxy silane, showed an excellent dispersion stability with a high UV-shielding and visible trnasparency.