• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.218-224
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• 1998

2nO and $Al_{2}O_{3}$ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at $900^{\circ}C{\sim}1200^{\circ}C$ for 3 h in vacuum($3{\times}10^{-5}$ Torr). According to XRD, remnant ZnO and $Al_{2}O_{3}$ not converted to $ZnAl_{2}O_{4}$ were observed up to $1100^{\circ}C$, which were completely changed to$ZnAl_{2}O_{4}$ ternary compound at $1200^{\circ}C$. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at $1200^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.31-35
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• 2020

This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

• Molecules and Cells
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• v.21 no.1
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• pp.161-165
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• 2006

Dichlorodihydrofluorescein ($DCFH_2$) is a widely used probe for intracellular $H_2O_2$. However, $H_2O_2$ can oxidize $DCFH_2$ only in the presence of a catalyst, whose identity in cells has not been clearly defined. We compared the peroxidase activity of Cu,Zn-superoxide dismutase (CuZnSOD), cytochrome c, horseradish peroxidase (HRP), $Cu^{2+}$, and $Fe^{3+}$ under various conditions to identify an intracellular catalyst. Enormous increase by bicarbonate in the rate of $DCFH_2$ oxidation distinguished CuZnSOD from cytochrome c and HRP. Cyanide inhibited the reaction catalyzed by CuZnSOD but accelerated that by $Cu^{2+}$ and $Fe^{3+}$. Oxidation of $DCFH_2$ by $H_2O_2$ in the presence of a cell lysate was also enhanced by bicarbonate and inhibited by cyanide. Confocal microscopy of $H_2O_2$-treated cells showed enhanced DCF fluorescence in the presence of bicarbonate and attenuated fluorescence for the cells pre-incubated with KCN. Moreover, DCF fluorescence was intensified in CuZnSOD-transfected HaCaT and RAW 264.7 cells. We propose that CuZnSOD is a potential intracellular catalyst for the $H_2O_2$-dependent oxidation of $DCFH_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.118-124
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• 1998

$Ni_{0.65}Zn_{0.35}Cu_{0.1}Fe{1.9}O_4$ has been studied with Mossbauer spectroscopy and X-ray diffraction. The crystal structure is found to be a cubic spinel with the lattice constant $a_0=8.390{\AA}$. Mossbauer spectra of $Ni_{0.65}Zn_{0.35}Cu_{0.1}Fe{1.9}O_4$ has been taken at various temperatures ranging from 12 K to 705 K. The isomer shift indicates that iron ions are ferric at tetrahedral [A] and octahedral sites [B], respectively. The Neel temperature is determined to be $T_N=705\;K$. As the temperature increases toward $T_N$ a systematic line broadening effect in the Mossbauer spectrum is observed and interpreted to originate from different temperature dependencies of the magnetic hyperfine fields at various iron sites. The quadrupole splitting just on $T_N$ is 0.41 mm/s whereas the quadrupole shift below $T_N$ vanishes. This implies that the orientation of the magnetic hyperfine field with respect to be principal axes of the electric field gradient is random.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.222-232
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• 2000

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.95-96
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• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Journal of Environmental Science International
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• v.11 no.7
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• pp.713-720
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• 2002

In order to provide the basic information on the environmental pollution of Kyungsan province, the contents of Pb, Cd, Cr, Cu, Mn and Zn in soil, stream water, aquatic sediment and groundwater were investigated, and also the values of pH, COD, $KMnO_4-C$,\;NH_3-N,\;NO_2-N,\;NO_3-N$ and $Cl^-$ of stream water and groundwater were determined. The results were as follows. The values of COD, $NH_3-N,\;NO_2-N$ and $NO_3-N$ of the stream waters were very low. The contents of Pb, Cd, Cr, Cu and Zn in the stream waters were respectively at range of $0.014~0.063 mg/{\ell},\;0.004~0.007 mg/{\ell$\mid$, 0~0.045 mg/{\ell},\;0~0.008 mg/{\ell}$\;and\;$0.001~0.175 mg/{\ell}$, and these values were much lower than those of contaminated stream water in Korea. The contents of Cd, Cr, Cu and Zn in the soils were respectively at range of 0.12~O.71 ppm, 0.88~2.65 ppm, 2.86~22.33 ppm and 3.89~26.39 ppm, and these values were much lower than those of ordinary polluted areas in Korea. The contents of Cd, Cr, Cu, As, Zn and Mn in the aquatic sediments were respectively at range of 3.05~3.81 ppm, 14.6~70.6 ppm, 13.74~61.59 ppm, 76.8~465.5 ppm, 12.56~190.83 ppm and 333.3~l188.3 ppm. The values of pH, $KMnO_4-C,\;NH_3-N$, and $NO_3-N$ of the groundwaters were respectively at range of 7.6~8.4, $0~3.95{\ell}$, 0.05~0.15 mg/{\ell}$ and 0.05~0.42 $mg/{\ell}$. The contents of Pb, Cd and Cr in the groundwaters were respectively at range of 0.015~0.061 $mg/{\ell}$, 0.O06~0.009 $mg/{\ell}$ and 0.005~0.045 $mg/{\ell}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.