• 분석과학
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• 제6권5호
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• pp.501-508
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• 1993

$^{241}Am-Be$(${\alpha}$, n) 중성자 선원의 중성자/감마선(n/${\gamma}$) 복합 방사선장에서 $^6Li$(n, ${\alpha}$)T 핵반응을 이용하고 두 섬광체, BC 501($C_8H_{10}$)과 Cerium의 섬광 감쇠 시간차와 동일 섬광체 내에서의 n/${\gamma}$에 대한 서로 다른 섬광감쇠 시간차를 병용하여 PSD(Pulse Shape Disciminator) 및 CFD(Constant Fraction Discriminator) 방법으로 n와 ${\gamma}$성분을 분리 측정하였으며 $^6Li$ 속중성자 분광계의 figure of merit는 1.36으로 평가되었다.

• Nuclear Engineering and Technology
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• 제49권1호
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• pp.189-195
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• 2017

Gel dosimeters have unique advantages in comparison with other dosimeters. Until now, these gels have been used in different radiotherapy techniques as a reliable dosimetric tool. Because dose distribution measurement is an important factor for appropriate treatment planning in different radiotherapy techniques, in this study, we evaluated the ability of the N-isopropylacrylamide (NIPAM) polymer gel to record the dose distribution resulting from the mixed neutron-gamma field of boron neutron capture therapy (BNCT). In this regard, a head phantom containing NIPAM gel was irradiated using the Tehran Research Reactor BNCT beam line, and then by a magnetic resonance scanner. Eventually, the $R_2$ maps were obtained in different slices of the phantom by analyzing T2-weighted images. The results show that NIPAM gel has a suitable potential for recording three-dimensional dose distribution in mixed neutron-gamma field dosimetry.

• 한국표면공학회지
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• 제55권2호
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• pp.77-83
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• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.

• 분석과학
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• 제5권4호
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• pp.367-372
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• 1992

방사선 중성자 선원의 에너지 스펙트럼을 측정하기 위하여 액체 섬광 검출기(NE213)와 펄스모형 분리장치를 감마선 선원과 중성자 선원을 이용하여 그 감응 특성을 분석하였다. Am-Be 선원을 이용하여 이 장치에 대한 "Figure of Merit"을 측정한 결과 1.13 이었다. 이 값은 단색 에너지 중성자 선원인 $^{12}C(d,\;n)^{13}N$에서의 1.3 과 상당히 유사한 값을 보여 준다. NE213-PSD 장치의 성능 시험을 위한 이 실험결과는 중성자-감마 혼합 방사선장에서 스펙트럼의 측정과 중성자 에너지 스펙트럼과 속밀도 측정표준을 확립하는 데 기술적으로 유용하게 쓰일 것이다.

• 한국결정성장학회지
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• 제25권5호
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국결정성장학회지
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• 제14권6호
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• pp.244-252
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• 2004

$CuISe_2$ 단결정 박막은 수평 전기로에서 합성한 $CuInSe_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $620^{\circ}C$, $410^{\circ}C$로 고정하여 단결정 박막을 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 선 요동곡선(DCRC) 으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs 였다. $CuAlSe_2$/Si(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293k에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g$(T)는 Varshni 공식에 따라 계산한 결과 1.1851 eV-($8.99\times10^{-4} eV/K)T^2$/(T+153k)였다. 광전류 스펙트럼으로 부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting Δcr값이 0.0087eV이며 spin-orbit Δso값은 0.2329 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n = 1일때 $A_1-, B_1$-와 $C_1$-exciton봉우리임을 알았다.

• Journal of Radiation Protection and Research
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• 제23권3호
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• pp.123-138
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• 1998

개인피폭선량 평가용 열형광선량계인 UD802 선량재에 대한 X-선장, 감마선장, 베타선장 및 중성자선장의 순수선장과 X-선장/감마선장, 베타선장/감마선장 및 중성자장/감마선장의 혼합선장에서의 반응특성을 조사하였으며 소자반응이 확률적으로 분포하는 성질을 이용한 개인피폭선량 평가 방법을 개발하였다. 선량계 특성조사를 위한 기준조사는 한국원자력안전기술원의 X-선장, 베타선장 및 감마선장을 이용하였으며 중성자선장은 미국 PNL에 의뢰하여 수행하였다. 특성조사 결과 광자 선장에 대한 소자1과 소자2는 에너지에 대한 의존성이 매우 적어 선량당량의 계산시 매우 유용한 자료로 사용되어질 수 있으며 소자3과 소자4는 저에너지 및 중에너지의 광자선장에 대해 매우 민감한 변화를 보이고 있다. 소자1/소자3 및 소자1/소자4의 반응비는 베타선장과 중성자선장에 대하여 에너지의존성이 큰 반응비를 나타내며, 소자3/소자2의 반응비는 중성자선장에 대해서만 1이하의 값을 나타내고 있다. 저에너지 및 중에너지 광자선장에 대한 에너지 분별은 소자3/소자2 및 소자3/소자4의 반응비로서 가능함을 확인하였다. 본 연구에서 개발한 확률분포 분석법의 적용가능성을 보이기 위하여 Panasonic UD716AGL/UD802 판독시스템에 적용하여 ANSI N13.11-1993에 따른 성능검증을 수행하였다. 성능검증 결과 모든 범주에 대하여 성능지수, ${\mid}B{\mid}+S$가 최대 0.232의 성능이 확인되었다. 특히 일부 소자의 비정상적 반응에 대해서도 최적의 피폭선량평가를 수행하고 있음이 확인되었으며, 실험실에서 재현될 수 없는 실제 방사선작업 환경에서의 선량평가 수행시, 본 논문에서 제시한 선량평가방법을 적용할 경우 계획된 피폭과 예상하지 못한 방사선장에 대한 피폭을 구분할 수 있어 보다 심도 있는 피폭선량평가 및 방사선관리가 가능할 것으로 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.79-80
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.