• Analytical Science and Technology
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• v.6 no.5
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• pp.501-508
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• 1993

In n/${\gamma}$ mixed field of $^{241}Am-Be$(${\alpha}$, n) neutron source, we seperated the neutron component from gamma ray component. At the center of the detector, $^6Li$ was doped on the cerium activated glass plate for $^6Li$(${\alpha}$, n)T nuclear reaction. The time differences of the light following excitations by different scintillators, BC501($C_8H_{10}$) and cerium, and by the same scintillator for different radiations as neutrons and gamma-rays are used to apply the methods of PSD(Pulse Shape Discriminator) and CFD(Constant Fraction Discriminator). The figure of merit of $^6Li$ fast neutron spectrometer is estimated as 1.36.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.189-195
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• 2017

Gel dosimeters have unique advantages in comparison with other dosimeters. Until now, these gels have been used in different radiotherapy techniques as a reliable dosimetric tool. Because dose distribution measurement is an important factor for appropriate treatment planning in different radiotherapy techniques, in this study, we evaluated the ability of the N-isopropylacrylamide (NIPAM) polymer gel to record the dose distribution resulting from the mixed neutron-gamma field of boron neutron capture therapy (BNCT). In this regard, a head phantom containing NIPAM gel was irradiated using the Tehran Research Reactor BNCT beam line, and then by a magnetic resonance scanner. Eventually, the $R_2$ maps were obtained in different slices of the phantom by analyzing T2-weighted images. The results show that NIPAM gel has a suitable potential for recording three-dimensional dose distribution in mixed neutron-gamma field dosimetry.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.77-83
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• 2022

Nanocrystalline MoN coatings were prepared by inductively coupled plasma magnetron sputtering (ICPMS) changing the plasma power from 0 W to 200 W. The properties of the coatings were analyzed by x-ray diffraction, field emission scanning electron microscopy, atomic force microscopy, nanoindentation tester and semiconductor characterization system. As the ICP power increases, the crystal structure of the MoN coatings changed from a mixed phase of γ-Mo₂N and α-Mo to a single phase γ-Mo₂N. MoN coatings deposited by ICPMS at 200 W showed the most compact microstructure with the highest nanoindentation hardness of 27.1 GPa. The electrical resistivity of the coatings decreased from 691.6 μΩ cm to 325.9 μΩ cm as the ICP power increased.

• Analytical Science and Technology
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• v.5 no.4
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• pp.367-372
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• 1992

In order to measure the energy spectrum of a radioactive neutron source, the pulse shape discrimination (PSD) system with organic scintillator, NE-213, was characterized by using some of the gamma ray sources and neutron source, Am-Be. The figure of merit of the rise time spectrum of AmBe source measured by this system was about 1.13. This value agrees well with the value of 1.3 which is measured for monoenergetic source, $^{12}C(d,\;n)^{13}N$. The results of present experiment for performance test of NE213-PSD system will provide the useful technique to measure the spectrum of neutron-gamma mixed field and to establish the neutron energy spectrum and flux density standards.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.173-181
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• 2015

A stoichiometric mixture of evaporating materials for $BaIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $6.13{\times}10^{17}cm^{-3}$ and $222cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.0581eV-(3.9511{\times}10^{-3}eV/K)T^2/(T+536K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2S_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2S_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{24}$-exciton peaks for n = 24.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.244-252
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $_CuInSe2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62\times10^{16}/\textrm{cm}^3$, 296 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.1851 eV -($8.99\times10^{-4} eV/K)T^2$(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe$_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the $\Gamma$6 states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-, B_1$-와 $C_1$-exciton peaks for n = 1.

• Journal of Radiation Protection and Research
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• v.23 no.3
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• pp.123-138
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• 1998

Characteristics of element responses of Panasonic UD802 personnel dosimeters in the X, ${\beta}$, ${\gamma}$, ${\gamma}/X$, ${\gamma}/{\beta}$ and ${\gamma}$/neutron mixed fields were assessed. A dose-response algorithm has been developed to decide the high probability of a radiation type and energy by using the distribution in all six ratios of the multi-element TLD. To calculate the 4-element response factors and ratios between the elements of the Panasonic TLDs in the X, $\beta$, and $\gamma$ radiation fields, Panasonic’s UD802 TLDs were irradiated with KINS’s reference irradiation facility. In the photon radiation field, this study confirms that element-3 (E3) and element-4 (E4) of the Panasonic TLDs show energy dependent both in low- and intermediate-energy range, while element-1 (E1) and element-2 (E2) show little energy dependency in the entire whole range. The algorithm, which was developed in this study, was applied to the Panasonic personnel dosimetry system with UD716AGL reader and UD802 TLDs. Performance tests of the algorithm developed was conducted according to the standards and criteria recommended in the ANSI N13.11. The sum of biases and standard deviations was less than 0.232. The values of biases and standard deviations are distributed within a triangle of a lateral value of 0.3 in the ordinate and abscissa, With the above algorithm, Panasonic TLDs satisfactorily perform optimum dose assessment even under an abnormal response of the TLD elements to the energy imparted. This algorithm can be applied to a more rigorous dose assessment by distinguishing an unexpected dose from the planned dose for the most practical purposes, and is useful in conducting an effective personnel dose control program.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.79-80
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• 2006

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-Insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation. $E_g(T)=2.7116 eV-(7.74{\times}10^{-4} eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and C1-exciton peaks for n = 1.