• 대한전자공학회논문지SD
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• 제41권2호
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• pp.67-75
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• 2004

본 논문은 인덕턴스 성분을 포함한 단일 도선 및 트리 구조 RLC 연결선의 버퍼 삽입 방법을 제시한다. 이를 위해 먼저 CMOS 버퍼가 구동하는 단일 RLC 도선에 대한 시간 지연의 대수식을 제시한다. 이 수식은 현재의 서브마이크로미터 공정을 위한 n-th power law 기반에서 유도되었으며, 다양한 RLC 부하를 가지고 실험해 본 결과, 실제 SPICE 시뮬레이션 결과에 비해 최대 9％ 오차를 갖는 것으로 나타났다. 본 논문은 이 지연 시간 수식을 바탕으로 단일 도선 RLC 연결선을 여러 개로 나누는 버퍼 삽입에 관한 수식과 RLC 트리 연결선의 시간 지연을 최적화하기 위해 삽입될 버퍼의 사이즈를 결정하는 알고리듬을 제시한다. 제시된 버퍼 삽입 알고리듬은 0.25㎛ CMOS 공정의 트리 연결선에 적용하였으며, HSPICE 결과를 이용하여 정확도를 검증하였다.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• 열처리공학회지
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• 제13권5호
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• 한국산학기술학회논문지
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• 제11권2호
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• pp.409-413
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• 2010

실리콘 기판에 GaN 에피성장을 확인하기 위해, P형 Si(100) 기판 전면에 버퍼층으로 10 nm 두께의 코발트실리사이드를 형성시켰다. 형성된 코발트실리사이드 층을 HF로 크리닝하고, PA-MBE (plasma assisted-molecular beam epitaxy)를 써서 저온에서 500 nm의 GaN를 성막하였다. 완성된 GaN은 광학현미경, 주사탐침현미경, TEM, HR-XRD를 활용하여 특성을 확인하였다. HF 크리닝을 하지 않은 경우에는 GaN 에피택시 성장이 진행되지 않았다. HF 크리닝을 실시한 경우에는 실리사이드 표면의 국부적인 에칭에 의해 GaN성장이 유리하여 모두 GaN $4\;{\mu}m$ 정도의 두께를 가진 에피택시 성장이 진행되었다. XRD로 GaN의 <0002> 방향의 결정성 (crsytallinity)을 $\omega$-scan으로 판단한 결과 Si(100) 기판의 경우 2.7도를 보여 기존의 사파이어 기판 정도로 우수할 가능성이 있었다. 나노급 코발트실리사이드를 버퍼로 채용하여 GaN의 에피성장이 가능할 수 있었다.

• Journal of Pharmaceutical Investigation
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• 제16권2호
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• pp.43-54
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• 1986

To increase the bioavailability of clonixin, clonixin argininate was prepared and compared with clonixin by determining solubility, pKa, lipid-water partition coefficient, dissolution rate and in vivo tests. The results are summerized as followings; 1) The solubility of clonixin argininate was increased by 20 times in water, about 1.2 times in pH 1.2 and pH 8.0 buffer solution, and about 1.8 times in pH 6.8 buffer solution compared with that of clonixin. 2) pKa values of clonixin, clonixin lysinate and clonixin argininate were 6.32, 7.20 and 7.45, respectively. 3) The lipid-water partition coefficient of clonixin argininate was increased more than that of the clonixin in n-hexane, carbon tetrachloride, chloroform, methylene chloride, and n-butanol, but the partition coefficient of clonixin was increased more than that of clonixin argininate in benzene/pH 1.2 buffer solution, ether/pH 8.0 buffer solution, and 3-methylbutyl acetate/pH 1.2, pH 8.0 buffer solution. 4) The time required to dissolve 60% $(T_{60%},\;min.)$ of clonixin argininate was about 1.5 min. in water and pH 1.2 buffer solution, and about 5 min. in pH 6.8 buffer solution. $T_{60%}$ of clonixin lysinate was about 1.5 min. in water, about 1.8 min. in pH 6.8 buffer solution, and about 8 min. in pH 1.2 buffer solution. But $T_{60%}$ of clonixin was about 96 min. in pH 6.8 buffer solution, over 2 hours in water and pH 1.2 buffer solution. 5) Anti-inflammatory effect of clonixin argininate was increased more than that of clonixin over 6 hours, and that of clonixin lysinate was followed by lapse of time. 6) Analgesic effect of clonixin argininate was increased by 1.5 times more than that of clonixin and the effect of clonixin argininate was nearly identical with that of clonixin lysinate. 7) The absorption rates (Ka) of clonixin, clonixin lysinate and clonixin argininate were $0.169\;hr^{-1},\;0.652\;hr^{-1}$ and $0.723\;hr^{-1}$ in situ, respectively.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.100.2-100
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• 2002

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.177-180
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• 2002

The purpose of this thesis is to develope buffer materials by the plasma polymerization method. In this article the buffer materials, plasma poly thiophene(PPTh) is used to study the interface of eter/organic in organic light emitting diodes(OLED). The interface of meter/organic materials is the important and critical objectives in development of OLED. The hole transport layer was N,N'-dipheneyl-N, N'bis-(3-methypheneyl)-1,1'dipheneyl-4,4'-diamine (TPD); the host material of mission layer was 8-tris-hydroxyquinoline aluminium (Alq3). When PPTh was inserted between ITO and TPD, emission efficiency increased.

• 한국자기학회지
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• 제8권4호
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• pp.216-223
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• 1998

DC magnetron sputtering 방법에 의해 Corning glass 가판 위에 제작한 buffer/[CoFe/Cu]N 형태의 다층작막에 대하여 자기저항비의 비자성층 Cu두께, 기저층 종류(Fe, Cu, Cr, Ta)와 두께, Ardkqfur, 다층 층수 및 열처리 의존성을 조사하였다. 자기저항비는 비자성층 Cu 두께에 따라 진동하였다. 기저층 Fe 및 Cr의 두께가 60$\AA$이고, 층수 N=15, Ardkqfur 5mTorr에서 극대자기저항비 14%를 보였으며 25$0^{\circ}C$까지의 시료에 대한 열처리는 다층박막의 주기성을 유지한 채 더 큰 결정립을 갖게 하여 자기저항비는 증가하였으나 그 이상의 온도에서는 계면 혼합 및 계면 확산에 의한 감소를 나타내었다. Cr기저층 시료가 Fe 기저층 시료보다 열적안정성이 더 좋은 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.68-69
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• 2007

We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.