• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.389-392
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• 1996

The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

• Proceedings of the Optical Society of Korea Conference
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• 1999.08a
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• pp.216-217
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• 1999

A tapered ridge mode laser diode with increased spot size is designed and analyzed . The mode evolution concept is applied to design the taper and the method does not require regrowth or multiple-step etching technique. Three-dimensional BPM results show that the designed taper can transfer more than 97% of the mode power in the active region to the expanded mode.

• Journal of Integrative Natural Science
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• v.5 no.1
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• pp.27-31
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• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Restorative Dentistry and Endodontics
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• v.40 no.4
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• pp.299-305
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• 2015

Objectives: The purpose of this study was to investigate the effectiveness of multiple decontamination procedures for salivary contamination after curing of a universal adhesive on dentin bond strength according to its etch modes. Materials and Methods: Forty-two extracted bovine incisors were trimmed by exposing the labial dentin surfaces and embedded in cylindrical molds. A universal adhesive (All-Bond Universal, Bisco) was used. The teeth were randomly divided into groups according to etch mode and decontamination procedure. The adhesive was applied according to the manufacturer's instructions for a given etch mode. With the exception of the control groups, the cured adhesive was contaminated with saliva for 20 sec. In the self-etch group, the teeth were divided into three groups: control, decontamination with rinsing and drying, and decontamination with rinsing, drying, and adhesive. In the etch-and-rinse group, the teeth were divided into four groups: control, decontamination with rinsing and drying, decontamination with rinsing, drying, and adhesive, and decontamination with rinsing, drying, re-etching, and reapplication of adhesive. A composite resin (Filtek Z350XT, 3M ESPE) was used for filling and was cured on the treated surfaces. Shear bond strength was measured, and failure modes were evaluated. The data were subjected to one-way analysis of variation and Tukey's HSD test. Results: The etch-and-rinse subgroup that was decontaminated by rinse, drying, re-etching, and reapplication of adhesive showed a significantly higher bond strength. Conclusions: When salivary contamination occurs after curing of the universal adhesive, additional etching improves the bond strength to dentin.

• Korean Journal of Optics and Photonics
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• v.17 no.5
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• pp.437-446
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• 2006

A fabrication method fur high-aspect-ratio microchannels in stainless steel using laser-assisted thermochemical wet etching is reported in this paper. The fabrication of deep microchannels with an aspect ratio over ten is realized by applying a multiple etching process with an optimization of process conditions. The cross-sectional profile of the microchannels can be adjusted between rectangular and triangular shapes by properly controlling laser power and etchant concentration. Excellent dimensional uniformity is achieved among the channels with little heat-affected area. Microchannels with a width ranging from 15 to $50{\mu}m$ can be fabricated with an aspect ratio of ten and a pitch of 150 m or smaller. The effects of process variables such as laser power, scan speed, and etchant concentration on the fabrication results, including etch width, depth, and cross-sectional profile are closely examined.

• The korean journal of orthodontics
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• v.27 no.5 s.64
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• pp.771-779
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• 1997

The purpose of this in vitro study was to evaluate the effects of different acid etching times on the enamel surface morphology, shear bond strength and debonding failure mode of orthodontic attachment. Ninety six extracted human mandibular premolars were divided into eight groups of twelve teeth. The buccal surfaces were etched with $37\%$, phosphoric acid for 5, 10, 15, 30, 45, 60, 90 and 120 seconds, respectively. Two teeth from each group were used for scanning electron microscope examination. On the etched buccal surfaces of remaining teeth, orthodontic attachments(lingual buttons) were bonded with light cured orthodontic adhesive. Twenty foot hours after bonding, a Instron universal testing machine was used to determine shear bond strength of orthodontic attachment to enamel. After debonding, bases of orthodontic attachments and enamel surfaces were examined under stereoscopic microscope to determine failure mode. Statistical analysis of the data was carried out with one nay ANOVA and Duncan's multiple range test The results were as follows; 1. There was no statistically significant difference in shear bond strengths between the various etching times(p<0.05). 2. The failure modes of orthodontic attachments had some differences. In 5, 10 and 15 seconds etching groups, the percentage of adhesive/enamel interface failure was higher than that of adhesive/attachment interface failure. On the contrary, in 30, 45, 60, 90 and 120 seconds etching groups, the results were reversed. 3. The etching patterns of enamel surfaces had a great variation. So, we could not find any correlation between etching pattern and bond strength. 4. The findings in this study indicate that in vitro reduction of the etching me to 5 seconds maintains clinically acceptable bond strength. However, further study is required to determine the cause of failure mode in 5, 10 and 15 seconds groups.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.35-39
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• 2009

A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.

• The korean journal of orthodontics
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• v.28 no.5 s.70
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• pp.803-812
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• 1998

The purpose of this study was to evaluate the shear bond strength and failure mode of ceramic brackets according to the surface treatment of porcelain. Sixty Porcelain samples were randomly divided into six groups of ten samples. Then they were treated as follows: Group 1(silane only), Group 2(etching+silane), Group 3(stone+silane), Group 4(sandblasting+silane), Group 5(stone +etching+silane), Group 6(sandblasting+etching+silane) After surface treatment of porcelain, sixty Transcend 6000 brackets were bonded to the prepared porcelain surface and they were stored in $37^{\circ}C$ saline for 24 hours. An Instron universal testing machine was used to test the shear bond strength of ceramic brackets to porcelain. After debonding, bases of ceramic brackets and porcelain surfaces were examined under scanning electron microscope(SEM) to determine failure mode. Statistical analysis of the data was carried out with one-way ANOVA and Duncan's multiple range test. The results were as follows : 1. The shear bond strength of surface-treated groups 2 to 6 was higher than that of only silane-treated group 1, and there was statistical significance. (P<0.05) 2. There was no significant difference among the groups 3 to 6. (P>0.05) 3. The shear bond strength of etching-surface treated group 2 was significantly lower than those of sandblasting-surface treated group 4, complex surface treated group 5 and group 6. 4. According to the scanning electromicroscopic images, the surface roughness of sandblasting-surface treated group 4 was less than those of the group 5 and 6, but there was no significant difference in the shear bond strength. (P>0.05) As a conclusion we can have a clinically adequate bond strength when an application of silane is done after the treatment of porcelain surface with more than one way to bond ceramic bracket on the porcelain. Also, it is considered that the sandblasting and application of silane is effective for the simplication and convenience of the treatment.

• Journal of Advanced Navigation Technology
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• v.26 no.6
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• pp.516-521
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• 2022

In this paper, a compact 4-bit chipless RFID(radio frequency identification) tag using a modified ELC(electric field-coupled inductive-capacitive) resonator and multiple slot resonators is proposed. The modified ELC resonator uses an interdigital-capacitor structure in the conventional ELC resonator to lower the resonance peak frequency of the RCS. The multiple slot resonators are designed by etching three slots with different lengths into an inverted U-shaped conductor. The resonant peak frequency of the RCS for the modified ELC resonator is 3.216 GHz, whereas those of the multiple slot resonators are set at 4.122 GHz, 4.64 GHz, and 5.304 GHz, respectively. The proposed compact four-bit tag is fabricated on an RF-301 substrate with dimensions of 50 mm×20 mm and a thickness of 0.8 mm. Experiment results show that the resonant peak frequencies of the fabricated four-bit chipless RFID tag are 3.285 GHz, 4.09 GHz, 4.63 GHz, and 5.31 GHz, respectively, which is similar to the simulation results with errors in the range between 0.78% and 2.16%.