• Title/Summary/Keyword: multilayer deposition

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Hardness of AlTiN/TiAlN multilayer coatings deposited by Cathodic Vacuum Arc Deposition (음극 진공 아크 증착법에 의한 AlTiN/TiAlN 다층막의 경도)

  • Gwon, O-Jin;Kim, Mi-Seon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.35-35
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    • 2018
  • 물리적 증착법에 의해 제조되는 초고경도 박막은 나노다층과 나노복합 구조가 대표적이며, 본 연구에서는 음극 아크 증착법으로 TiAlN과 AlTiiN 층 조합을 이용하여 나노다층구조를 포함하는 다층막 시편을 제작하였다. 초격자 두께 주기 12.1 ~ 15.6 nm에서 35 ~ 55 GPa의 경도값을 가졌으며, 절삭공구 코팅분야에 적용할 예정이다.

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Tendency of PVD coating technology on Metal cutting tools (금속 절삭공구에 대한 PVD 코팅기술의 동향)

  • Kim, Jong-Seong
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.8
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    • pp.11-17
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    • 2001
  • Industrial use of physical vapor deposition(PVD) has been widely expanded during last two decades, and in the mean time plasma assistance in PVD has become an essential tool in preparing compound films with dense microstructure. The principles of electron beam-based plating, balanced and unbalanced magnetron sputtering and cathodic arc deposition. consisting three basic configuration of plasma assisted PVD(PAPVD)process, were reviewed. Recent technical development in PVD coating process were discussed. This paper tries to show tendency for developing new coating film on cutting tools.

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The Microscopic Surface Properties of Rhodamine Derivatives in EL System (EL시스템의 Rhodamine 유도체화합물의 표면특성)

  • 박수길;조성렬;손원근;조병호;임기조;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.265-268
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    • 1997
  • Electroluminescent(EL) devices are constructed using multilayer organic thin film. A cell structure of glass substrate/Indium-Tinoxide/TPD as a hole transporting layer/Alq3+Rhodamine 101 perchrolate(Red3) as an emitting layer/Alq3 as an electrron transporting layer/Al as an electrode was employed. Optimal thickness of emitting layer in EL cell was performed from the viewpoint of the electronics properties of emitting layers. The general vapor-deposition method was used to control the thickness of omitting layer in EL devices and electro-optical characteristics were measured. It is clarified that controlling thickness of emitting layer in vapor-deposition film had an effect on the change of carrier injection and EL spectrum. The intensity of red omission with luminance of 81cd/$m^2$ was achived at 11V driving voltage. The surface morphology of emitting layer in EL devices was investigated.

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Polymer 기판상에 제작된 AZO/Ag/AZO 다층박막

  • Kim, Sang-Mo;Im, Yu-Seung;Geum, Min-Jong;Kim, Gyeong-Hwan
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2007.06a
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    • pp.207-210
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    • 2007
  • We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

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Structure Formation in Multilayered Films Prepared by the Layer-by-Layer Deposition using PAA and HM-PEO

  • Seo, Jin-Hwa;Lutkenhaus Jodie L..;Kim, Jun-Oh;Hammond Paula T.;Char Kook-Heon
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.295-295
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    • 2006
  • In present study, poly(acrylic acid) (PAA) and hydrophobically modified poly(ethylene oxide) (HM-PEO) multilayers based on the hydrogen bonding between the component polymer pair have been prepared by the LbL deposition method. Dip assembled HM-PEO/PAA multilayers yield unique film morphologies in comparison with PEO/PAA multilayers due to the micellar formation of HM-PEO owing to the hydrophobic attraction between alkyl chains end-capped with the PEO chains. Individual HM-PEO micelles were connected through the bridging PEO chains to form temporary networks on multilayer surface and induced peculiar surface morphology on HM-PEO/PAA multilayers above the critical number of bilayers.

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NEW PROGRESS IN TiN-BASED PROTECTIVE COATINGS DEPOSITED BY ARC ION PLATING

  • Huang, R.F.;Wen, L.S.
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.265-275
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    • 1999
  • Titanium nitride and related overlayers produced by arc ion plating (AIP) are applied as commercial coatings in world-wide scale since the middle of 80s. Due to the achievements of low temperature deposition (LTD), they begin now to be used as wear and corrosion-resistant coatings for machine parts, besides applications on cemented carbide and high speed steel cutting tools. On the other side, TiN can be now applied successfully to brass, Al-alloy, ZnAl alloy articles as decorative coating through LTD. Various nitrides, carbonitrides, borides and other refractory compounds, such as (Ti, Al)N, TiCN, CrN, are used as the coatings for special heavy-duty working conditions instead of TiN since 90s. More and more multilayer coatings are applied now substituting single layer ones. Duplex processes are under development.

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Magnetoresistance of Single-type and Dual-type GMR-SV Multilayer Thin Films with Top and Bottom IrMn Layer (상부와 하부 IrMn층을 갖는 단일구조 및 이중구조 거대자기저항-스핀밸브 다층박막의 자기적 특성 비교 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.4
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    • pp.115-122
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    • 2017
  • The antiferromagnet IrMn based four different GMR-SV multilayers on Corning glass were prepared by using ion beam deposition and DC magnetron sputtering system. The magnetoresistance (MR) properties for single-type and dual-type GMR-SV multilayer films were investigated through the measured major and minor MR curves. The exchange bias coupling field ($H_{ex}$) and coercivity ($H_c$) of pinned layer, the $H_c$ and interlayer exchange coupling field ($H_{int}$) of free layer for the dual-type structure GMR-SV multilayer films consisted of top IrMn layer were 410 Oe, 60 Oe, 1.6 Oe, and 7.0 Oe, respectively. The minor MR curve of two free layers was performed the squarelike feature having a MR ratio of 8.7 % as the sum of 3.7 % and 5.0 %. The value of average magnetic field sensitivity (MS) was maintained at 2.0 %/Oe. Also, the magnetoresistance properties of the single-type and dual-type structure GMR-SV multilayer films consisted of bottom IrMn layer were decreased more than those of top IrMn layer. Two antiparallel states of magnetization spin arrays of the pinned and free layers in the dual-type GMR-SV multilayer films occurred the maximum MR value by the effect of spin dependence scattering.

Flexible NO2 gas sensor using multilayer graphene films by chemical vapor deposition

  • Choi, HongKyw;Jeong, Hu Young;Lee, Dae-Sik;Choi, Choon-Gi;Choi, Sung-Yool
    • Carbon letters
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    • v.14 no.3
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    • pp.186-189
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    • 2013
  • We report a highly sensitive $NO_2$ gas sensor based on multi-layer graphene (MLG) films synthesized by a chemical vapor deposition method on a microheater-embedded flexible substrate. The MLG could detect low-concentration $NO_2$ even at sub-ppm (<200 ppb) levels. It also exhibited a high resistance change of ~6% when it was exposed to 1 ppm $NO_2$ gas at room temperature for 1 min. The exceptionally high sensitivity could be attributed to the large number of $NO_2$ molecule adsorption sites on the MLG due to its a large surface area and various defect-sites, and to the high mobility of carriers transferred between the MLG films and the adsorbed gas molecules. Although desorption of the $NO_2$ molecules was slow, it could be enhanced by an additional annealing process using an embedded Au microheater. The outstanding mechanical flexibility of the graphene film ensures the stable sensing response of the device under extreme bending stress. Our large-scale and easily reproducible MLG films can provide a proof-of-concept for future flexible $NO_2$ gas sensor devices.