• 제목/요약/키워드: multi-junction cells

검색결과 34건 처리시간 0.026초

Potential Wide-gap Materials as a Top Cell for Multi-junction c-Si Based Solar Cells: A Short Review

  • Pham, Duy Phong;Lee, Sunhwa;Kim, Sehyeon;Oh, Donghyun;Khokhar, Muhammad Quddamah;Kim, Sangho;Park, Jinjoo;Kim, Youngkuk;Cho, Eun-Chel;Cho, Young-Hyun;Yi, Junsin
    • Current Photovoltaic Research
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    • 제7권3호
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    • pp.76-84
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    • 2019
  • Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

고효율 적층형 태양전지를 위한 유무기 페로브스카이트 (Organic-Inorganic Perovskite for Highly Efficient Tandem Solar Cells)

  • 박익재;김동회
    • 세라미스트
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    • 제22권2호
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    • pp.146-169
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    • 2019
  • To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuInxGa(1-x)Se2 bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

태양전지-지구 에너지원이자 우주항해의 시작 (Solar Cells - the Energy Source for Earth & the beginning of Space Exploration)

  • 한일기
    • 진공이야기
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    • 제1권4호
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    • pp.4-9
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    • 2014
  • About 170 years has been passed since the concept of photovoltaic has been suggested by French physicist Alexandre-Edmond Becquerel. Now the highest efficiency of solar cell has reached up to 44% by III-V multi-junction solar cells with concentrator. Those multi-junction solar cells are suitable as energy source for spaceships. On the other hand, the cell efficiency of solar cell for electric power generation as energy source for Earth has is going to be saturated although commercial solar cell efficiency is around 20%. In the part 1 of this article, the history of III-V multi-junction solar cells which have been adapted for spaceships is explained and in the part 2, new approach for the improvement of cell efficiency is suggested as the energy source for Earth.

Thin Film Si-Ge/c-Si Tandem Junction Solar Cells with Optimum Upper Sub- Cell Structure

  • Park, Jinjoo
    • Current Photovoltaic Research
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    • 제8권3호
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    • pp.94-101
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    • 2020
  • This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of Eg profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (Jsc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

Optimization of μc-SiGe:H Layer for a Bottom Cell Application

  • 조재현;이준신
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.322.1-322.1
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    • 2014
  • Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

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구형렌즈를 적용한 CPV 모듈 발전성능 분석에 관한 연구 (A Study on the Performance Analysis for the CPV Module Applying Sphericalness Lens)

  • 정병호;김남오;이강연
    • 전기학회논문지P
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    • 제59권3호
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    • pp.293-297
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    • 2010
  • Next generation concentrating photovoltaic technologies could have a large-scale impact on world electricity production once they will become economically attractive and grid parity will be reached. Multi-junction solar cells will be characterised by a high value of the cell economical performance index if the cells were able to operate at high concentration level. Concentrating the sunlight by optical devices like lenses or mirrors reduces the area of expensive solar cells or modules, and, moreover, increases their efficiency. Accurate and reliable tracking is an important issue to maintain high the CPV system output power. Further, for high concentration CPV systems, the actual tracker cost is about 20% of the total CPV system cost. In this paper high-concentration is defined as systems using concentration ratios well above 100 times the one sun intensity and trackerlss CPV system studied. Using sphericalness lens and parallel MJ cell connection method were suggested and achieved experiment on a clear day in summer. Development of these high performance multi-junction CPV module promises to accelerate growth in photovoltaic power generation.

Pt 금속 박막을 이용한 InAlP층의 텍스쳐 구조 형성 및 반사율 측정 (Reduction of Light Reflectance from InAlP by the Texture Formation Using Ultra-Thin Pt Layer)

  • 신현욱;신재철;김효진;김성;최정우
    • 한국진공학회지
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    • 제22권3호
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    • pp.150-155
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    • 2013
  • 태양전지의 표면에 텍스쳐 구조를 형성하면 빛의 반사율을 줄일 수 있으므로 태양전지의 효율을 증가시킬 수 있다. 또한 표면의 텍스쳐 구조는 넓은 파장대역에서 빛의 반사를 줄여주기 때문에 다중접합 III-V화합물 태양전지에 아주 유용하다. 본 연구에서는 얇은 Pt층을 식각 마스크로 사용하여 다중접합 III-V태양전지의 window층으로 사용되는 InAlP층에 다양한 텍스쳐 구조를 형성하고 반사율을 측정하였다. 습식식각에 의해 나노미터 크기로 형성된 피라미드 꼴 텍스쳐 구조는 $0.3{\sim}1.5{\mu}m$의 넓은 파장영역에서 빛의 반사율을 13.7%까지 감소시켰다.

Al2O3/Si/Al2O3구조를 이용한 실리콘태양전지 제작 및 특성 (Fabrication and Properties of Silicon Solar Cells using Al2O3/Si/Al2O3 Structures)

  • 김광호
    • 반도체디스플레이기술학회지
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    • 제14권4호
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    • pp.45-49
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    • 2015
  • Using a combined CVD and ALD equipment system, multi-layer quantum well structures of $Al_2O_3/a-Si/Al_2O_3$ were fabricated on silicon Schottky junction devices and implemented to quantum well solar cells, in which the 1~1.5 nm thicknesses of the aluminum oxide films and the a-Si thin film layers were deposited at $300^{\circ}C$ and $450^{\circ}C$, respectively. Fabricated solar cell was operated by tunneling phenomena through the inserted quantum well structure being generated electrons on the silicon surface. Efficiency of the fabricated solar cell inserted with multi-quantum well of 41 layers has been increased by about 10 times that of the solar cell of pure Schottky junction solar cell.

Current Status of Thin Film Silicon Solar Cells for High Efficiency

  • Shin, Chonghoon;Lee, Youn-Jung;Park, Jinjoo;Kim, Sunbo;Park, Hyeongsik;Kim, Sangho;Jung, Junhee;Yi, Junsin
    • Current Photovoltaic Research
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    • 제5권4호
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    • pp.113-121
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    • 2017
  • The researches on the silicon-based thin films are being actively carried out. The silicon-based thin films can be made as amorphous, microcrystalline and mixed phase and it is known that the optical bandgap can be controlled accordingly. They are suitable materials for the fabrication of single junction, tandem and triple junction solar cells. It can be used as a doping layer through the bonding of boron and phosphorus. The carbon and oxygen can bond with silicon to form a wide range of optical gap. Also, The optical gap of hydrogenated amorphous silicon germanium can be lower than that of silicon. By controlling the optical gaps, it is possible to fabricate multi-junction thin film silicon solar cells with high efficiencies which can be promising photovoltaic devices.

박막태양전지의 광포획 기술 현황 (Current Status in Light Trapping Technique for Thin Film Silicon Solar Cells)

  • 박형식;신명훈;안시현;김선보;봉성재;;;이준신
    • Current Photovoltaic Research
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    • 제2권3호
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    • pp.95-102
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    • 2014
  • Light trapping techniques can change the propagation direction of incident light and keep the light longer in the absorption layers of solar cells to enhance the power conversion efficiency. In thin film silicon (Si) solar cells, the thickness of absorption layer is generally not enough to absorb entire available photons because of short carrier life time, and light induced degradation effect, which can be compensated by the light trapping techniques. These techniques have been adopted as textured transparent conduction oxide (TCO) layers randomly or periodically textured, intermediate reflection layers of tandem and triple junction, and glass substrates etched by various patterning methods. We reviewed the light trapping techniques for thin film Si solar cells and mainly focused on the commercially available techniques applicable to textured TCO on patterned glass substrates. We described the characterization methods representing the light trapping effects, texturing of TCO and showed the results of multi-scale textured TCO on etched glass substrates. These methods can be used tandem and triple thin film Si solar cells to enhance photo-current and power conversion efficiency of long term stability.