• Title/Summary/Keyword: multi-chip packages process

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The Low Height Looping Technology for Multi-chip Package in Wire Bonder (와이어 본더에서의 초저 루프 기술)

  • Kwak, Byung-Kil;Park, Young-Min;Kook, Sung-June
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.1 s.18
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    • pp.17-22
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    • 2007
  • Recent new packages such as MCP(Multi-Chip Package), QDP(Quadratic Die Package) and DDP(Dual Die Package) have stack type configuration. This kind of multi-layer package is thicker than single layer package. So there is need for the low height looping technology in wirebonder to make these packages thinner. There is stiff zone above ball in wirebonder wire which is called HAZ(Heat Affect Zone). When making low height loop (below $80\;{\mu}m$) with traditional forward loop, stiff wire in HAZ(Heat Affected Zone) above ball is bended and weakened. So the traditional forward looping method cannot be applied to low height loop. SSB(stand-off stitch) wire bonding method was applied to many packages which require very low loops. The drawback of SSB method is making frequent errors at making ball, neck damage above ball on lead and the weakness of ball bonding on lead. The alternative looping method is BNL(ball neckless) looping technology which is already applied to some package(DDP, QDP). The advantage of this method is faster in bonding process and making little errors in wire bonding compared with SSB method. This paper presents the result of BNL looping technology applied in assembly house and several issues related to low loop height consistence and BNL zone weakness.

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A study on structural stability of Backgrinding equipment using finite element analysis (유한요소해석을 이용한 백그라인딩 장비의 구조안정성 연구)

  • Wi, Eun-Chan;Ko, Min-Sung;Kim, Hyun-Jeong;Kim, Sung-Chul;Lee, Joo-Hyung;Baek, Seung-Yub
    • Design & Manufacturing
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    • v.14 no.4
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    • pp.58-64
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    • 2020
  • Lately, the development of the semiconductor industry has led to the miniaturization of electronic devices. Therefore, semiconductor wafers of very thin thickness that can be used in Multi-Chip Packages are required. There is active research on the backgrinding process to reduce the thickness of the wafer. The backgrinding process polishes the backside of the wafer, reducing the thickness of the wafer to tens of ㎛. The equipment that performs the backgrinding process requires ultra-precision. Currently, there is no full auto backgrinding equipment in Korea. Therefore, in this study, ultra-precision backgrinding equipment was designed. In addition, finite element analysis was conducted to verify the equipment design validity. The deflection and structural stability of the backgrinding equipment were analyzed using finite element analysis.

Numerical Analysis of Warpage and Stress for 4-layer Stacked FBGA Package (4개의 칩이 적층된 FBGA 패키지의 휨 현상 및 응력 특성에 관한 연구)

  • Kim, Kyoung-Ho;Lee, Hyouk;Jeong, Jin-Wook;Kim, Ju-Hyung;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.2
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    • pp.7-15
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    • 2012
  • Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

Effect of Fine Alumina Filler Addition on the Thermal Conductivity of Non-conductive Paste (NCP) for Multi Flip Chip Bonding (멀티 플립칩 본딩용 비전도성 접착제(NCP)의 열전도도에 미치는 미세 알루미나 필러의 첨가 영향)

  • Jung, Da-Hoon;Lim, Da-Eun;Lee, So-Jeong;Ko, Yong-Ho;Kim, Jun-Ki
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.2
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    • pp.11-15
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    • 2017
  • As the heat dissipation problem is increased in 3D multi flip chip packages, an improvement of thermal conductivity in bonding interfaces is required. In this study, the effect of alumina filler addition was investigated in non-conductive paste(NCP). The fine alumina filler having average particles size of 400 nm for the fine pitch interconnection was used. As the alumina filler content was increased from 0 to 60 wt%, the thermal conductivity of the cured product was increased up to 0.654 W/mK at 60 wt%. It was higher value than 0.501 W/mK which was reported for the same amount of silica. It was also found out that the addition of fine sized alumina filler resulted in the smaller decrease in thermal conductivity than the larger sized particles. The viscosity of NCP with alumina addition was increased sharply at the level of 40 wt%. It was due to the increase of the interaction between the filler particles according to the finer particle size. In order to achieve the appropriate viscosity and excellent thermal conductivity with fine alumina fillers, the highly efficient dispersion process was considered to be important.

A Study of Warpage Analysis According to Influence Factors in FOWLP Structure (FOWLP 구조의 영향 인자에 따른 휨 현상 해석 연구)

  • Jung, Cheong-Ha;Seo, Won;Kim, Gu-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.42-45
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    • 2018
  • As The semiconductor decrease from 10 nanometer to 7 nanometer, It is suggested that "More than Moore" is needed to follow Moore's Law, which has been a guide for the semiconductor industry. Fan-Out Wafer Level Package(FOWLP) is considered as the key to "More than Moore" to lead the next generation in semiconductors, and the reasons are as follows. the fan-out WLP does not require a substrate, unlike conventional wire bonding and flip-chip bonding packages. As a result, the thickness of the package reduces, and the interconnection becomes shorter. It is easy to increase the number of I / Os and apply it to the multi-layered 3D package. However, FOWLP has many issues that need to be resolved in order for mass production to become feasible. One of the most critical problem is the warpage problem in a process. Due to the nature of the FOWLP structure, the RDL is wired to multiple layers. The warpage problem arises when a new RDL layer is created. It occurs because the solder ball reflow process is exposed to high temperatures for long periods of time, which may cause cracks inside the package. For this reason, we have studied warpage in the FOWLP structure using commercial simulation software through the implementation of the reflow process. Simulation was performed to reproduce the experiment of products of molding compound company. Young's modulus and poisson's ratio were found to be influenced by the order of influence of the factors affecting the distortion. We confirmed that the lower young's modulus and poisson's ratio, the lower warpage.

A Study on the Surface Patterns and Bonding Characteristics of Exposed Materials based on Wheel Grit Size during Package Grinding (패키지 연삭 시 휠 입도에 따른 노출된 가공물의 표면 양상과 접합 특성 연구)

  • Jin Park;Seojun Bae;Kwangil Kim;Jinho Lee;Sanggyu Jang;Yong-Nam Koh
    • Journal of the Microelectronics and Packaging Society
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    • v.31 no.3
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    • pp.72-79
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    • 2024
  • To realize high speed and high bandwidth in the 2.xD package structure, methods requiring high technology are being studied for processes such as interposer or bridge die bonding, as well as heterogeneous chip bonding. Particularly, the grinding process of bonding surfaces is considered a key technology. The method of bonding an interposer or bridge die including Cu layers to a substrate and then exposing metallic materials such as Cu, which can be electrically connected, through a grinding process to connect heterogeneous chips is an approach that utilizes conventional packaging techniques. However, to meet the yield and quality standards required for mass production in processes involving the large-scale bonding of micro-bumps, as seen in 2.xD packages, it is essential to develop techniques based on high precision. This paper investigates the multi-material grinding process for heterogeneous chip bonding in a 2.xD package structure, using the grit size of the grinding wheel as a variable. The study examines the surface patterns and bonding characteristics of the exposed materials achieved through the grinding process. Through this study, we aim to optimize the grinding process for high-quality bonding, thereby contributing to the development of advanced packaging technologies.