• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.859-864
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• 2000

Recently IR detecting devices using MEMS have been actively studied. Microbolometer, one of these devices, detects the change of resistivity as the change of temperature of the device by absorbing IR, IR absorbing materials for microbolometer should have high TCR value and low noise characteristics which depends on resistivity. We fabricated multi-layer VOx thin films to improve the IR detectivity of uncooled IR devices and analyzed IR absorbing characteristics. We fabricated multi-layer VOx thin films by RF reactive sputtering method on SiNx substrate and changed characteristics using the different thickness of V and V$_2$O$\_$5/ thin films. Then we annealed them under 300$\^{C}$. The TCR (Temperature Coefficient of Resistance) measurement was carried out to estimate the IR detectivity of multi-layer VOx thin films. XRD (X-Ray Diffraction) analysis was carried out to estimate the IR detectivity of multi-layer VOx thin films. ZXRD (X-Ray Diffraction) analysis was used to find out phases and structures of V and V$_2$O$\_$5/ thin films. AES (Auger Electron Spectroscopy) analysis was used to find out composition of multi-layer VOx thin films before and after annealing. We obtained the optimum thickness range of V and V$_2$O$\_$5/ thin films from the result of AES analysis. We changed the thickness of V$_2$O$\_$5/ about 20 to 150 $\AA$ and thickness of V about 10 to 20 $\AA$. As the result of this, TCR value of multi-layer VOx thin films was about -2%/k and the resistivity was ∼1Ωcm.

• 공업화학
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• 제34권2호
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• pp.161-169
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• 2023

본 연구는 allbanggae starch (ABS), polyvinyl alcohol (PVA), alginic acid (SA)를 이용하여 naproxen (NP) 각인 starch 기반 다층 바이오소재를 제조하고, 물리화학적 특성과 약물 방출 제어 효과를 조사하였다. 또한, FE-SEM과 FT-IR 분석에 의해 제조한 다층 바이오소재의 특성을 조사하였다. 약물 방출 제어 효과와 경피 약물 전달 시스템의 적용 가능성을 확인하기 위해 NP 각인 다층 바이오소재로부터 NP 방출 특성을 사람의 체온인 36.5 ℃에서 다양한 pH buffer solution과 인공 피부를 이용하여 확인하였다. NP는 낮은 pH보다 높은 pH에서 1.3배 더 빠른 방출을 나타냈고, single-layer 바이오소재에서보다 multi-layer 바이오소재에서 약 4.0배 느린 방출이 일어남을 확인하였다. 인공 피부 방출에서도 동일하게 single-layer 바이오소재보다 multi-layer 바이오소재에서 약 4.0배 더 느린 약물 방출 결과를 나타내었다. 또한, double-layer와 triple-layer 바이오소재 모두 12시간 동안 지속적으로 NP가 방출되었음을 확인 하였다. NP 방출 mechanism을 규명하기 위해 수학적 모델링에 적용하여 비교했을 때, pH buffer solution에서의 방출은 Fickian diffusion mechanism, 인공 피부 방출은 empirical mechanism에 적합한 것을 확인하였다.

• 생물환경조절학회지
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• 제28권3호
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• pp.255-264
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• 2019

본 연구에서는 현장 온실농가에서 수명이 다하여 교체작업이 이루어진 총 4종의 다겹보온자재를 채취하여 해당 사용기간별 보온성의 변화를 비교하기 위해 여기서 고안된 Hot box 시험이 실시되었다. 4종의 다겹보온자재는 마트지, 부직포, PE폼 및 화학솜 등이 주요 재료로서 다겹보온자재별로 이 재료들이 서로 다르게 조합된 형태였다. 이 4종의 다겹보온자재를 시편($70{\times}70cm$)으로 제작하여 Hot box 시험을 통해서 대상시편별로 온도 하강률, 열관류율 및 열전도저항 등이 측정되었다. 그 결과를 요약하면 다음과 같다. 본 연구에서 사용된 다겹보온자재들에 대하여 적절한 보온성능을 기대할 수 있는 사용기간은 약 5년 정도로 예상되었다. 다겹보온자재의 재료조합에 대하여 다겹의 PE폼을 적용하여 상대적으로 보온성을 높일 수 있으나 다겹보온자재 내에서 공기 단열층을 형성하는 화학솜에 비해 보온성능에 대한 기여가 현저히 낮은 것으로 판단되었다. 다겹보온자재에 대하여 적절한 보온성능을 기대하기 위해서는 기본적으로 화학솜과 같은 공기 단열층을 형성하는 기능이 있는 재료가 다겹보온자재에 포함되어야 될 것으로 판단되었다. 본 연구에서 고안된 Hot box 시험을 통해 다겹보온 자재의 온도 하강률, 열관류율 및 열전도저항 등이 적절하게 측정되었다. 그러나 본 연구는 사용이 완료된 다겹보온자재의 채취 어려움으로 총 4종의 다겹보온자재만 고려되었으며, 이는 비교적 적은 사례로 통해 얻어진 결과라 할 수 있으며, 본 연구의 한계이다. 향후 관련 연구를 통해 더 많은 사례들이 조사 및 보완되어야 될 것이다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.1145-1148
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• 1998

New capacitance modeling and transient analysis for multi-layer interconnects with shielding effect are presented. The upper layer capacitances with under-layer shielding lines are represented by introducing a filling factor η which can be defined as the ratio of upper-layer line length to the total under-layer line width. The upper-layer effective self capacitances considering two extreme cases which the underlayer metals are assumed as a ground or as a Vdd are modeled. The signal transient analysis with shielding effect model is performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.388-389
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• 2005

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

• E2M - 전기 전자와 첨단 소재
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• 제7권3호
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• 대기
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• 제21권2호
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• pp.151-162
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• 2011

One-layer solar radiation(GWNU; Gangneung-Wonju National University) model is developed in order to resolve the lack of vertical observations and fast calculation with high resolution. GWNU model is based on IQBAL(Iqbal, 1983) and NREL(National Renewable Energy Laboratory) methods and corrected by precise multi-layer LBL(Line-by-line) model. Input data were used 42 atmospheric profiles from Garand et al.(2001) for calculation of global radiation by the Multi-layer and one-layer solar radiation models. GWNU model has error of about -0.10% compared with LBL model while IQBAL and NREL models have errors of about -3.92 and -2.57%, respectively. Global solar radiation was calculated by corrected GWNU solar model with satellites(MODIS, OMI and MTSAT-1R), RDPS model prediction data in Korea peninsula in 2009, and the results were compared to surface solar radiation observed by 22 KMA solar sites. All models have correlation($R^2$) of 0.91 with the observed hourly solar radiation, and root mean square errors of IQBAL, NREL and GWNU models are 69.16, 69.74 and $67.53W/m^2$, respectively.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.1853-1856
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• 2003

Multi-layer printed circuit board(PCB) is being used widely for the product with relatively complex circuits such as TV, VTR and FAX. With the rapid enlargement of electronic and IT industry, the hole machining technology on multi-layer PCB is increasingly required to improve. Thus, the micro drilling with ultrasonic vibration can be a good method for hole machining. Unlike conventional drilling, ultrasonic vibration applied drilling introduces less wear and fracture of not only tool but also internal surface of workpiece due to little cutting resistance, thus, machinability can be improved. The experiment is conducted through the comparison between the results of conventional drilling and ultrasonic micro drilling as well as among each results by the variation according to not only feed rate of drill but also amplitude and frequency of ultrasonic vibration. The multi-layer PCB consists of 6 layers and ${\Phi}$0.3 diameter drill was used. As a result, it was found that the state of internal surfaces of holes on multiple layer PCBs is improved by the application of ultrasonic vibration.