• Journal of information and communication convergence engineering
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• v.13 no.2
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• pp.81-85
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• 2015

A 94-GHz phased array antenna using a log-periodic antenna has been developed on a GaAs substrate. The developed phased array antenna comprises four log-periodic antennas, a phase shifter, and a Wilkinson power divider. This antenna was fabricated using the standard microwave monolithic integrated circuit (MMIC) process including an air bridge for unipolar circuit implementations on the same GaAs substrate. The total chip size of the fabricated phased array antenna is 4.8 mm × 4.5 mm. Measurement results showed that the fabricated phased array antenna had a very wide band performance from 80 GHz to 110 GHz with return loss characteristics better than -10 dB. In the center frequency of 94 GHz, the fabricated phased array antenna showed a return loss of -16 dB and a gain of 4.43 dBi. The developed antenna is expected to be widely applied in many applications at W-band frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.44-50
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• 2004

In this paper, a DBM(Doubly Balanced Mixer) of 2 GHz is implemented on FR4 substrate. The structure of doubly balanced mixer requires, in general, two batons and a quad diode. For balun, a novel planar balun using microstrip to CPS is suggested and designed. The suggested balun shows the phase imbalance of 180$^{\circ}$${\pm}$ 1.5$^{\circ}$and the amplitude imbalance of ${\pm}$ 0.2 ㏈ for 1.5 to 2.5 GHz. Using the balun, DBM is succesfully implemented, and the measured conversion loss of up/down converter show about 6 ㏈ over the bandwidth. The balun may be applicable for MMIC DBM with the process supporting backside via thourgh more study.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.207-214
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• 2005

This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.4
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• pp.655-662
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• 2011

SAR(Synthetic Aperture Radar) has the ability to generate high resolution images regardless of a weather condition(e.g. visibility good or poor and day or night, etc.). SAR is considered as one of the most important powers and needs for the future since it has been utilized in a number of important military fields such as early warning, urban defense, missile guidance system, etc. Additionally there are many civilian demands and applications in aviation, traffic control, earth and space explorations, weather forecast etc. This days, the ability to acquire and analyze information is needed to cope with the urgency of global politics and international changes. In this paper, technical survey and development review for SAR systems are investigated to derive the core and immature technologies of domestic defense industry.

• Journal of electromagnetic engineering and science
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• v.4 no.2
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• pp.87-92
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• 2004

A millimeter-wave distributed frequency doubler has been designed with distributed block and frequency tunable output reflectors. The simulated conversion loss of 9.5 ㏈ to 7.7 ㏈ from 54.6 ㎓ to 62.4 ㎓ output frequencies is achieved with fundamental and third harmonic signal rejections of more than 10 ㏈c. The fabricated chip has the size of 1.2 mm${\times}$1.0 mm. Some measured results of frequency and bias dependent characteristics are presented for the fabricated PHEMT MMIC frequency doubler. The designed doubler has two transistors, and if one of the transistors fails the doubler unit still operates with reduced gain. The failure effect of the PHEMT has been simulated, and compared to the measured data of which one PHEMT is not operating properly.

• Composites Research
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• v.22 no.3
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• pp.55-59
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• 2009

Microstrip antennas are low profile, are conformable to planar and nonplanar surfaces, are simple and inexpensive to manufacture, mechanically robust when mounted on rigid surfaces and are compatible with MMIC(Monolithic microwave integrated circuit) designs; they have been used in diverse communication systems. The rectangular microstrip patch antenna is designed for a central frequency of 12.5 GHz, and the final product is a $4{\times}1$ array antenna with curvature radius of 200 mm. The microstrip antenna is embedded in a sandwich structure which consists of skin and core material. After impact, the performance of damaged antenna is estimated by measuring the return loss and radiation pattern. The antenna performance was not affected by this impact damage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.3 s.106
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• pp.239-248
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• 2006

In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.

• ETRI Journal
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• v.42 no.4
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• pp.549-561
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• 2020

We developed a 0.1-㎛ metamorphic high electron mobility transistor and fabricated a W-band monolithic microwave integrated circuit chipset with our in-house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz-108 GHz band and achieved excellent spurious suppression. A low-noise amplifier (LNA) with a four-stage single-ended architecture using a common-source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W-band image-rejection mixer (IRM) with an external off-chip coupler was also designed. The IRM provided a conversion gain of 13 dB-17 dB for RF frequencies of 80 GHz-110 GHz and image-rejection ratios of 17 dB-19 dB for RF frequencies of 93 GHz-100 GHz.