• 전자공학회논문지A
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• 제31A권7호
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• pp.76-84
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• 1994

The characteristics of 3 inch wafer scale GaAs epitaxial wafer grown by molecular beam epitaxy for LSI process application were studied. The thickness and doping uniformity are characterized and discussed. The growth temperature and growth rate were $600^{\circ}C$ by pyrometer, and 1 $\mu$m/h, respectively. It was found that thickness and doping uniformity were 3.97% and 4.74% respectively across the full 3 inch diameter GaAs epitaxial layer. Also, ungated MESFETs have been fabricated and saturation current measurement showed 4.5% uniformity on 3 inch, epitaxial layer, but uniformity of threshold voltage increase up to 9.2% after recess process for MESFET device.

• 전자공학회논문지A
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• 제31A권9호
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• pp.114-120
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• 1994

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1725-1727
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• 1996

Brewster angle microscopy(BAM) makes it possible to measure domains of Langmuir films. Especially, formation and phase transition of the PAAS Langmuir monolayers from a gas phase to a solid phase at the air-water interface were observed by the use of BAM. And also we observed the comparative images of films deposited at each phase. The UV/visible absorption spectra of this films showed molecular intensity and aggregation at each state. The electrical properties of this material were measured by current-voltage(I-V) characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.563-563
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• 2012

We report a one-step fabrication of single-crystal organic nanowire arrays on substrates using a new direct printing method (liquid-bridge-mediated nanotransfer moulding, LB-nTM), which can simultaneously enable the synthesis, alignment and patterning of the nanowires using molecular ink solutions. Two- or three-dimensional complex structures of various single-crystal organic nanowires were directly fabricated over a large area with a successive process. The position of the nanowires can be aligned easily on complex structures because the mold is movable on substrates before drying the polar liquid layer, which acts as an adhesive lubricant. This efficient manufacturing method can produce a wide range of optoelectronic devices and integrated circuits with single-crystal organic nanowires.

• 대한전자공학회논문지
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• 제27권1호
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.632-632
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• 2013

We generated single-crystal organic nanowire arrays using a direct printing method (liquidbridge- mediated nanotransfer molding) that enables the simultaneous synthesis, alignment and patterning of nanowires from molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. The position of the nanowires on complex structures is easy to adjust, because the mold is movable on the substrates before the polar liquid layer, which acts as an adhesive lubricant, is dried. Repeated application of the direct printing process can be used to produce organic nanowire-integrated electronics with twoor three-dimensional complex structures on large-area flexible substrates. This efficient manufacturing method is used to fabricate all-organic nanowire field-effect transistors that are integrated into device arrays and inverters on flexible plastic substrates.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.133-139
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• 2007

Future MEMS systems will be composed of larger varieties of devices with very different functionality such as electronics, mechanics, optics and bio-chemistry. Integration technology of heterogeneous devices must be developed. This article first deals with the current development trend of new fabrication technologies; those include self-assembling of parts over a large area, wafer-scale encapsulation by wafer-bonding, nano imprinting, and roll-to-roll printing. In the latter half of the article, the concept towards the heterogeneous integration of devices and functionality into micro/nano systems is described. The key idea is to combine the conventional top-down technologies and the novel bottom-up technologies for building nano systems. A simple example is the carbon nano tube interconnection that is grown in the via-hole of a VLSI chip. In the laboratory level, the position-specific self-assembly of nano parts on a DNA template was demonstrated through hybridization of probe DNA segments attached to the parts. Also, bio molecular motors were incorporated in a micro fluidic system and utilized as a nano actuator for transporting objects in the channel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1130-1132
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• 2009

We propose a novel way for enhancement of efficiency on a quasi solid-state dye-sensitized solar cell (DSSC). It contained gel type electrolyte mixing the liquid crystal (LC) of specific concentration and applied voltage for alignment of the LC. Aligned LC is supported charge transfer inside electrolyte and efficiency is increased in DSSC. We made a quasi solid-state DSSC which applied DC voltage or not and have measured the power conversion efficiency (PCE) and the fill factor. From measurement, we obtain high performances in case of cell applied voltage compare to reference cell.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.724-726
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• 2007

We have developed the synthesis method to reduce the surface oxide layer in Cu nanoparticle, which is based on controlling the molecular weight of capping polymer. In addition, we demonstrated how the variation of oxide layer thickness influences the resistivity of conductive Cu film.

• 대한전자공학회논문지
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• 제23권2호
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• pp.264-268
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• 1986

A thchnique has been studied for the measurement of the spectral loss and the cut-off wave length, at which the first high-order mode disappears. The near-field patterns of a fiber which is excited by a variable wavelength source are used for the measurement of cut-off wavelength. Because of the absorptive phenomenon of OH- molecular vibration, spectral loss of a single mode optical fiber sample is 5.6dB/km at 1380 nm wavelength and 1dB/km at 1240 nm wavelength. From the near field intensity patterns and the mode field diameter graph for the half power width, the cut-off wavelength of the fiber is measured to be 1120 nm.