• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.351-354
• /
• 2004

This thesis presents Bipolar transistor with SAVEN(Self-Aligned VErtical Nitride) structure as a high-speed device which is essential for high-speed system such as optical storage system or mobile communication system, and proposes 0.8${\mu}m$ BiCMOS Process which integrates LDD nMOS, LDD pMOS and SAVEN bipolar transistor into one-chip. The SPICE parameters of LDD nMOS, LDD pMOS and SAVEN Bipolar transistor are extracted, and comparator operating at 500MHz sampling frequency is designed with them. The small Parasitic capacitances of SAVEN bipolar transistor have a direct effect on decreasing recovery time and regeneration time, which is helpful to improve the speed of the comparator. Therefore the SAVEN bipolar transistor with high cutoff frequency is expected to be used in high-speed system.

• Journal of Information Technology Applications and Management
• /
• v.12 no.4
• /
• pp.59-70
• /
• 2005

Flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional transaction management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. in order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient transaction processing. F2Pl improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process. We also propose a simulation model to show the performance of F2PL. Based on the results of the performance evaluation, we conclude that F2PL scheme outperforms the traditional scheme.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.3
• /
• pp.473-479
• /
• 2008

Generally, HDDs are widely used as data storage device in office, home and mobile machineries. So, it is used for various applications or tasks, such as file copy, file download, music and movie play etc., in various environment. In spite of this kind of varieties in tasks and environment in which HDDs perform, most commercial HDDs hardly control its operations adaptively to these varieties. Thus, it is preferred to optimize the performance and energy consumption of HDDs according to the task and/or the environment. So, this paper proposes a new fuzzy inference algorithm which adaptively controls HDDs operations and may also easily be implemented as the firmware of HDDs and run in the restricted environment such as embedded systems.

• Korean Journal of Materials Research
• /
• v.17 no.1
• /
• pp.37-42
• /
• 2007

The effects of immersion time in the liquid nitrogen and deformation-induced martensitic transformation on the behavior of austenite stainless steels used for the hydrogen storage tank of auto-mobile at cryogenic temperature were investigated. With increasing of immersion time in the liquid nitrogen, the tensile strength of all austenite stainless steels at cryogenic temperature was increased because the martensite transformation of unstable austenite. The restraint of crack generation ana transmission also increased the tensile strength by the active ${\alpha}'$ transformation. The elongation decreasing of 321 steel is not the mechanical deformation of austenite phase but the stress induced martensite phase during the tensile test.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.35-35
• /
• 2003

Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

• Transactions of Materials Processing
• /
• v.13 no.4
• /
• pp.307-318
• /
• 2004

Rectangular drawn case with extreme aspect ratio is widely used for electrical parts such as a lithium-ion battery container, semi-conductor case and so on. Additionally, from the recent trend towards miniaturization of the multi-functional mobile device, demands for rectangular case with the narrow width are increased. In this study, numerical and experimental approaches for the multi-stage deep drawing process have been carried out. Based on the research results of the width of 5.95mm model, finite element analysis for storage case of rectangular cup type was verified to the width of 4.95mm. Also, a series of manufacturing experiments for rectangular case is conducted and the deformed configuration of the rectangular drawn case are investigated by comparing with the results of the numerical analysis. And the modification of the initial blank is performed to minimize the trimmed material amount. By the application of the modified blank, the sound shape of the deformed parts is improved.

• 제어로봇시스템학회:학술대회논문집
• /
• 2005.06a
• /
• pp.31-36
• /
• 2005

Intelligent Space (iSpace) is the space where many intelligent devices, such as computers and sensors, are distributed. According to the cooperation of many intelligent devices, the environment comes to have intelligence. In iSpace, the locations of multiple humans and other objects are obtained and tracked by using multiple camera and color-based method. In addition, we describe a context-aware information system which is based on Spatial-Knowledge-Tags (SKT). SKT system enables humans to access information and data by using spatial location of human and stored information in storage. The proposed tracking method is applied to the intelligent environment and its performance is verified by the experiments.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.911-913
• /
• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2002.11a
• /
• pp.398.1-398
• /
• 2002

A new type actuator has been designed and investigated to overcome thermal problems in slim optical disc drives adopted in mobile storage devices. As the size of optical disc drives decreases, it is more difficult to remove the heat inside a drive and the temperature of an actuator increases. As a result, the second resonance of an actuator moves down to a lower frequency band and the performance of optical parts also deteriorates. (omitted)

• Proceedings of the KIEE Conference
• /
• 2006.04a
• /
• pp.267-269
• /
• 2006

Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional Indexing scheme such as B-Tree due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new indexing scheme called F-Tree. F-Tree improves tree operation performance by compressing pointers and keys in tree nodes and rewriting the nodes without a slow erase operation in node insert/delete processes.