• 제목/요약/키워드: mixing gases

검색결과 153건 처리시간 0.026초

산소부화연소에서 $CO_2$ 첨가에 대한 영향 (Effects of $CO_2$ addition to Oxygen-Enriched Combustion)

  • 김호근;김한석;안국영;김용모
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1389-1394
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    • 2003
  • $CO_2$ is a well-known green house gas, which is the major source of global warming. Many researchers have studied to reduce $CO_2$ emission in combustion processes. Among the method for reducing $CO_2$ emission, oxygen-enriched combustion has been proposed. But the adiabatic flame temperature is too high. So existing facilities must be changed, or the adiabatic flame temperature in the combustion zone should be reduced. The combustion characteristics, composition in the flame zone, temperature profile and emission gases were studied experimentally for the various oxygen-enriched mtios(OER) by addition of $CO_2$ under coustant $O_2$ flowrate. Results showed that the reaction zone was quenched, broadened, as addition of $CO_2$ was increased. Temperature has a large effect on the NOx emission. The emission of NOx in flue gas decreased due to the decreased temperature of reaction zone. It was also shown that the reaction was delayed by the cooling effect. As the addition of $CO_2$ was increased, the composition of CO in the flame zone increased due to the increase of reaction rate by increasing mixing effect of oxidant/fuel at OER=0, but the composition of CO decreased by quenching effect at OER=50 and 100%.

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BCl$_3$/SF6 gas chemistries에 의한 TiW막의 식각특성 연구 (A Study on the Etching Characateristics of TiW Films using BCl$_3$/SF6/ gas chemistries)

  • 권광호;김창일;윤선진;김상기;백규하;남기수
    • 전자공학회논문지D
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    • 제34D권3호
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    • pp.1-8
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    • 1997
  • The surface properties after plasma etching of TiW alloy using the chemistries of BCl$_{3}$ and SF$_{6}$ gases with varying mixing ratio have been investigated using XPS(X-ray photoelectron spectrocopy). The elements existed on the etched sampled have been extracted with BCL$_{3}$/SF$_{6}$ ratio and their chemical binding states have also been analysed. It was confirmed that the thickness of native oxide formed on the TiW films is thinner than 10nm by using Ar sputtering. At the same time, the roughness of etched surface has been esamnied using AFM (atomic force microscopy). on the basis of the basis of this results, the relations between the caanges of oxygen contents detected by XPS and the rouhness of etched surface have been discussed. And the etch rate and etched profile of Tiw films have been examined and the changes of the etch rate and etched prfile have been discussed with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound with XPS results. From XPS results, the role of passivation layer consisted of Ti-S compound has been proposed. Ti-S compound seems to make a role of passivation layer that surpresses Ti-O formation.ion.

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유동 가이드가 열파퍼 플라즈마 챔버의 아크현상 이력에 미치는 영향 (Effects of a Flow Guide on the Arcing History in a Thermal Puffer Plasma Chamber)

  • 이종철;김윤제
    • 대한기계학회논문집B
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    • 제31권10호
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    • pp.832-839
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    • 2007
  • The geometry and dimensions of an expansion chamber are decisive factors in thermal puffer plasma chamber designs. Because they together dominate the temperature and speed at which the cooling gas from the chamber flows back through a flow channel to the arcing zone for the successful interruption of fault currents. In this study, we calculated the flow and mass transfer driven by arc plasma, and investigated the effects of a flow guide installed inside a thermal puffer plasma chamber. It is found that the existing cold gas of the chamber mixes with hot gases entrained from the arcing zone and is subjected to compression due to pressure build-up in the chamber. The pressure build-up with the flow guide is larger than that without due to a vortex which rotates clockwise around the chamber center. By the reverse pressure gradient, the mixing gas of the chamber flows back out for cooling down the residual plasma near current zero. In the case with the flow guide, the temperature just before current zero is lower than that without, and the Cu concentration with high electrical conductivity is also less than that without the flow guide.

ICP 광원 시스템의 Ne:Xe 및 Ne:Ar 혼합가스의 전자온도 및 전자밀도 특성 (The Electron Temperature and Density Properties of Mixed Gases in ICP Lighting System : (Ne:Xe, Ne:Ar))

  • 이종찬;최용성;박대희;최기승
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제55권3호
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    • pp.156-160
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    • 2006
  • In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem and root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe and Ne:Ar mixed gas lamp improve firing voltage of Xe gas lamp. Purpose of this study is to understand ideal mixing-ratio of Ne:Xe and Ne:Ar gas by electron temperature and electron density for mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by single-Langmuir probe. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe and Ne:Ar.

화력발전용 가스재열기의 응력 해석 (Stress Analysis of Gas-Gas Heater in Thermal Power Plant)

  • 황석환;최재승;이후광
    • 한국정밀공학회지
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    • 제19권1호
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    • pp.204-211
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    • 2002
  • Today\`s industrialized plants are required to reduce SOx emitted from stacks at factories, utility power stations, etc. For this purpose, flue gas desulfurization(FGD) system is installed in thermal power plant and gas-gas heater(GGH) is used to play a vital role to reheat the wet treated gas from FGD. The sector plates are located at cold and hot sides of gas-gas heater. They serve as sealing to prevent mixing treated and untreated gases. Therefore, the deformation of the sector plate due to its dead weight and gas pressure should be considered as major factor for the sector plate design. And finite element analysis(FEA) for rotor part in GGH is performed with original model and two weight-reduced models with different diaphragm thickness, respectively. Stress concentrations at rotor diaphragm happen due to the dead weight, pressure difference between treated and untreated gas, and thermal distribution in the rotor. As the thickness of diaphragm is decreased, the stress level is increased. The direction of treated gas and untreated gas flow may affect the stress level.

ICP 광원 시스템의 Ne:Xe, Ne:Ar 혼합가스의 단일탐침법을 이용한 플라즈마 진단 (Plasma Diagnosis of Ne:Xe, Ne:Ar Mixed Gases by Single Langmuir Probe in Inductively Coupled Plasma Light Source System)

  • 최용성;이우기;;이경섭;이상헌
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.91-95
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    • 2006
  • In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mechanism is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by Langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe.

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13.56MHz로 여기되는 도파관 $CO_2$ 레이저의 동작특성 및 Xe 첨가효과 (Operating Characteristics of a Waveguide $CO_2$ Laser Excited by 13.56MHz and Additional Xe Effect)

  • 김영식;권혁상;신교철;백찬기;김윤명;박재환
    • 한국광학회지
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    • 제3권4호
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    • pp.234-238
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    • 1992
  • 금속과 판유리를 이용한 도파관 탄산가스 레이저를 제작하고 출력특성을 조사하였다. 도파관의 길이는 50cm, 내부 단면적은 $6\times 6\ttextrm{mm}^{2}$이며 13.56MHz의 고주파로 횡여기시키는 방식이다. 가스 밀폐형으로 동작될 때 입력전력과 가스압력 변화에 의한 레이저 출력의 측정 결과 가스 분압비 $He:CO_{2}:N_{2}:Xe= 6:1:2:1$, 전체 가스압력 50Torr, 고주파 입럭전력이 180W인 조건에서 최대출력 9.5W로 발진하고 있다.

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수소 분위기에서 유연 기판 위에 증착된 IZO 박막의 구조적 및 전기적 특성 (Structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate)

  • 조담비;이규만
    • 반도체디스플레이기술학회지
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    • 제11권1호
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    • pp.29-33
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    • 2012
  • In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

Verneuil법에 의한 $SiO_2$를 첨가한 Sapphire 단결정 성장 (SiO2 Doped Sapphire single Crystal Growth by Verneuil Method)

  • 조현;오근호;최종건;박한수
    • 한국세라믹학회지
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    • 제29권10호
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    • pp.822-826
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    • 1992
  • SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.

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Experimental Study on the Carbonation Properties of Dry Desulfurized Gypsum

  • Seo, Sung Kwan;Kim, Yoo;Chu, Yong Sik;Cho, Hyeong Kyu
    • 한국세라믹학회지
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    • 제55권1호
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    • pp.44-49
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    • 2018
  • The use of fossil fuels is steadily increasing. The thermal power generation industry uses a lot of energy and emits a large amount of greenhouse gases. On the other hand, a desulfurization facility can be installed to remove sulfur content during boiler combustion process of the power plant. Dry desulfurized gypsum generated from dry desulfurization facilities is suitable as a $CO_2$ absorbing material due to the presence of CaO. In this study, the carbonation properties of dry desulfurized gypsum were investigated by carbonizing dry desulfurized gypsum via mixing with water and stirring. As a result of microstructural, XRD and thermal analyses of the carbonized dry desulfurized gypsum, the carbonation age was found to be suitable for 16 h. Dry desulfurized gypsum absorbs about 16% of $CO_2$ per unit weight.