• 한국재료학회지
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• 제14권11호
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.97-98
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• 2007

A stoichiometric. mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}$ and $11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $4.87{\times}10^{17}\;cm^{-3}$ and $129\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;335\;K)$.

• 한국결정성장학회지
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• 제17권1호
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• pp.6-10
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• 2007

R-plane 사파이어 위에 a-plane GaN층이 성장된 기판에 혼합소스 HVPE(mixed-source hydride vapor phase epitaxy) 방법으로 GaN/InGaN의 이종접합구조(heterostructure)를 구현하였다. GaN/InGaN 이종접합구조는 GaN, InGaN, Mg-doped GaN 층으로 구성되어 있다. 각 층의 성장온도는 GaN층은 $820^{\circ}C$, InGaN 층은 $850^{\circ}C$, Mg-doped GaN 층은 $1050^{\circ}C$에서 성장하였다. 이때의 $NH_3$와 HCl 가스의 유량은 각각 500 sccm, 10 sccm 이었다. SAG-GaN/InGaN 이종접합구조의 상온 EL (electroluminescence) 특성은 중심파장은 462 nm, 반치폭(FWHM : full width at half maximum) 은 0.67eV 이었다. 이 결과로부터 r-plane 사파이어 기판위에 multi-sliding boat system의 혼합소스 HVPE 방법으로 이종접합구조의 성장이 가능함을 확인하였다.

• 한국결정성장학회지
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• 제20권1호
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• pp.1-6
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• 2010

혼합소스 hydride vapor phase epitaxy(HVPE) 방법으로 CuInGaSe(CIGS) 혼합 소스를 형성하였다. 각 금속들은 일정 비율로 혼합하였고, $1090^{\circ}C$에서 1시간 30분간 soaking 하였다. 혼합된 소스를 분말형태로 만든 후, 직경 10 mm 크기의 pellet을 만들었다. 시료는 혼합소스 HVPE 에서 소성 한 후 e-beam 으로 Mo이 증착된 기판 위에 증착하였다. Scanning electron microscope(SEM), Energy dispersive X-ray spectrum(EDS) 그리고 X-ray diffraction(XRD) 측정을 통하여 그 특성을 분석하였으며 박막의 특성은 (112), (204)/(220), (116)/(312)그리고 (400) 방향 등의 다결정 특성을 나타내었다.

• 공업화학
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• 제34권5호
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• pp.501-506
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• 2023

수크로스 에스터와 세라마이드를 혼합하여 겔레이터로 사용한 해바라기 오일의 올레오겔과 올레오겔 에멀전을 제조하였다. 올레오겔과 올레오겔 에멀젼 제형 내에서 겔레이터의 결정 구조는 편광현미경으로 관찰하고 물의 분산형태는 공초점 현미경으로 확인하였다. DSC 열차트 분석을 통해, 수크로스 에스터와 세라마이드를 혼합하면 세라마이드의 결정구조는 사라지고 제형에 물이 첨가되면 혼합된 겔레이터의 결정성이 더욱 상승함을 확인하였다. 제형에서의 수크로스 에스터, 세라마이드, 물의 비율에 따른 점도와 점탄성 등의 유변학적 특성의 변화를 살펴보았다. 세라마이드와 물의 함량이 증가할수록 점도 및 저장탄성률, 손실 탄성률 등이 모두 증가하고, 또한 제형의 안정성도 높아지는 경향을 보였다.

• Journal of Information Display
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• 제9권3호
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• pp.12-15
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• 2008

A bent electrode structure is proposed in the super in-plane switching (S-IPS) liquid crystal (LC), as it can reduce the response time without loss of transmittance in the bright state. The electrode angle in each position of the bent electrode was optimized to simultaneously achieve high transmittance and fast response time. The electro-optical characteristics of the proposed LC cell structure were experimentally compared with those of the conventional cell. It was observed that the response time became over 8% shorter without loss of transmittance when the proposed bent structure was applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.160-160
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• 2009

In recent years, the merging of nanomaterials and nano-technology into electro-optic (EO) device technology such as liquid crystal displays (LCDs) has attracted much attention because of their unique electro- and magneto-optic properties and novel display applications. One example of hybrid LC-inorganic systems is semiconductor nanorods added to LC for their strong reorientation effect and tunable refractive index. Doping of nanoparticles in LC or polymers can lead to changes in performance characteristics such as electro-optical, dielectric, memory effect, phase behavior, etc. Due to the tunability of LCDs with mixed inorganic materials, low voltage operation of a LC system can also be achieved using the significant electro-optical effect achieved through suspension of ferroelectric nanoparticles in NLC.

• 한국결정성장학회지
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• 제17권1호
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• pp.11-17
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• 2007

The spherical NiZn ferrite particles were prepared by ultrasonic spray pyrolysis with mixed solution of aqueous metal nitrates. The NiZn ferrite particle was observed with nano-sized primary particles of about 10 nm or less before annealing which represented as paramagnetic behavior measured at 77 K and room temperature. The typical abnormal growth of primary particles like polyhedral primary particles was observed by annealing at 1273 K with Zn-concentration dependency. The XRD patterns showed good crystallinity of NiZn ferrite powder after annealing. In annealing process, the intra-particle sintering phenomenon was observed and the spherical particle morphology was collapsed at 1673 K. The saturation magnetization of NiZn ferrite powder for each annealing temperature was decreased with measuring temperature of $77{\sim}$300K.

• The Korean Journal of Ceramics
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• 제1권3호
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• pp.131-136
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• 1995

It has been reported that the biocement obtained by mixing $CaO-SiO_2-P_2O_5$ glass powders with ammonium phosphate solution has biocompatibility as will as high strength. The hardening mechanism and hydroxyapatite forming mechanism were discussed when $53.6%CaO_1,\; 38.1%SiO_2,\; 7.7P_2O_6,\; 0.6%CaF_2$(mole %) glass powder was reacted with ammonium phosphate solution and reacted in tris-buffer solution, respectively. High strength hardened biocement was obtained for the specimen with $CaNH_4PO_4\;H_2O$ crystal when the glass powder was mixed with ammonium phosphate solution, and hydroxyapatite crystal was rapidly formed only in the sample with $CaNH_4PO_4\;H_2O$ crystal when it was reacted in tris-buffer solution.